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Titolo: |
Materials and reliability handbook for semiconductor optical and electron devices / / Osamu Ueda, Stephen J. Pearton, editors
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Pubblicazione: | New York, : Springer, 2013 |
Descrizione fisica: | 1 online resource (617 p.) |
Disciplina: | 621.381/046 |
621.38152 | |
Soggetto topico: | Semiconductors |
Semiconductors - Optical properties | |
Semiconductors - Materials | |
Altri autori: |
UedaOsamu
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Note generali: | Description based upon print version of record. |
Nota di bibliografia: | Includes bibliographical references and index. |
Nota di contenuto: | pt. 1. Materials issues and reliability of optical devices -- pt. 2. Materials issues and reliability of electron devices. |
Sommario/riassunto: | Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature. The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and reliability, which allow accurate prediction of reliability as well as the design specifically for improved reliability. The Handbook emphasizes physical mechanisms rather than an electrical definition of reliability. Accelerated aging is useful only if the failure mechanism is known. The Handbook also focuses on voltage and current acceleration stress mechanisms. Provides the first handbook to cover all aspects of compound semiconductor device reliability Systematically describes research results on reliability and materials issues of both optical and electron devices developed since 2000 Covers characterization techniques needed to understand failure mechanisms in compound semiconductor devices Includes experimental approaches in reliability studies Presents case studies of laser degradation and HEMT degradation. |
Titolo autorizzato: | Materials and reliability handbook for semiconductor optical and electron devices ![]() |
ISBN: | 1-283-64029-5 |
1-4614-4337-7 | |
Formato: | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione: | Inglese |
Record Nr.: | 9910438116403321 |
Lo trovi qui: | Univ. Federico II |
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