RF/microwave circuit design for wireless applications [[electronic resource] /] / Ulrich L. Rohde, David P. Newkirk

• Autore: Rohde Ulrich L
• Pubblicazione: New York, : John Wiley, c2000
• Descrizione fisica: 1 online resource (977 p.)
• Disciplina: 621.381/32; 621.3815
• Soggetto topico: Microwave integrated circuits - Computer-aided design; Wireless communication systems - Equipment and supplies - Design; Semiconductors - Computer-aided design; Radio frequency
• Altri autori: NewkirkDavid P
• Note generali: "A Wiley-Interscience publication."
• Nota di bibliografia: Includes bibliographical references and index.
• Nota di contenuto: Contents; Foreword; Preface; 1 Introduction to Wireless Circuit Design; 1-1 Overview; 1-2 System Functions; 1-3 The Radio Channel and Modulation Requirements; 1-3-1 Introduction; 1-3-2 Channel Impulse Response; 1-3-3 Doppler Effect; 1-3-4 Transfer Function; 1-3-5 Time Response of Channel Impulse Response and Transfer Function; 1-3-6 Lessons Learned; 1-3-7 Wireless Signal Example: The TDMA System in GSM; 1-4 About Bits, Symbols, and Waveforms; 1-4-1 Introduction; 1-4-2 Some Fundamentals of Digital Modulation Techniques; 1-5 Analysis of Wireless Systems ; 1-5-1 Analog and Digital Receiver Designs1-5-2 Transmitters; 1-6 Building Blocks; 1-7 System Specifications and Their Relationship to Circuit Design; 1-7-1 System Noise and Noise Floor; 1-7-2 System Amplitude and Phase Behavior; 1-8 Testing; 1-8-1 Introduction; 1-8-2 Transmission and Reception Quality; 1-8-3 Base-Station Simulation; 1-8-4 GSM; 1-8-5 DECT; 1-9 Converting C/N or SNR to E[sub(b)]/N[sub(o)]; 2 Models for Active Devices; 2-1 Diodes; 2-1-1 Large-Signal Diode Model; 2-1-2 Mixer and Detector Diodes; 2-1-3 PIN Diodes; 2-1-4 Tuning Diodes; 2-2 Bipolar Transistors ; 2-2-1 Transistor Structure Types2-2-2 Large-Signal Behavior of Bipolar Transistors; 2-2-3 Large-Signal Transistors in the Forward-Active Region; 2-2-4 Effects of Collector Voltage on Large-Signal Characteristics in the Forward-Active Region; 2-2-5 Saturation and Inverse Active Regions; 2-2-6 Small-Signal Models of Bipolar Transistors; 2-3 Field-Effect Transistors; 2-3-1 Large-Signal Behavior of JFETs; 2-3-2 Small-Signal Behavior of JFETs; 2-3-3 Large-Signal Behavior of MOSFETs; 2-3-4 Small-Signal Model of the MOS Transistor in Saturation; 2-3-5 Short-Channel Effects in FETs ; 2-3-6 Small-Signal Models of MOSFETs2-3-7 GaAs MESFETs; 2-3-8 Small-Signal GaAs MESFET Model; 2-4 Parameter Extraction of Active Devices; 2-4-1 Introduction; 2-4-2 Typical SPICE Parameters; 2-4-3 Noise Modeling; 2-4-4 Scalable Device Models; 2-4-5 Conclusions; 2-4-6 Device Libraries; 2-4-7 A Novel Approach for Simulation at Low Voltage and Near Pinchoff Voltage; 2-4-8 Example: Improving the BFR193W Model; 3 Amplifier Design with BJTs and FETs; 3-1 Properties of Amplifiers; 3-1-1 Introduction; 3-1-2 Gain; 3-1-3 Noise Figure (NF); 3-1-4 Linearity; 3-1-5 AGC ; 3-1-6 Bias and Power Voltage and Current (Power Consumption)3-2 Amplifier Gain, Stability, and Matching; 3-2-1 Scattering Parameter Relationships; 3-2-2 Low-Noise Amplifiers; 3-2-3 High-Gain Amplifiers; 3-2-4 Low-Voltage Open-Collector Design; 3-3 Single-Stage FeedBack Amplifiers; 3-3-1 Lossless or Noiseless Feedback; 3-3-2 Broadband Matching; 3-4 Two-Stage Amplifiers; 3-5 Amplifiers with Three or More Stages; 3-5-1 Stability of Multistage Amplifiers; 3-6 A Novel Approach to Voltage-Controlled Tuned Filters Including CAD Validation; 3-6-1 Diode Performance; 3-6-2 A VHF Example ; 3-6-3 An HF/VHF Voltage-Controlled Filter
• Sommario/riassunto: A unique, state-of-the-art guide to wireless integrated circuit design.With wireless technology rapidly exploding, there is a growing need for circuit design information specific to wireless applications. Presenting a single-source guidebook to this dynamic area, industry expert Ulrich Rohde and writer David Newkirk provide researchers and engineers with a complete set of modeling, design, and implementation tools for tackling even the newest IC technologies. They emphasize practical design solutions for high-performance devices and circuitry, incorporating ample examples of novel and
• Titolo autorizzato: RF
• ISBN: 1-280-26471-3; 9786610264711; 0-470-35013-X; 0-471-46380-9; 1-60119-405-6; 0-471-22413-8
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910146964203321
• Lo trovi qui: Univ. Federico II