Physical properties of III-V semiconductor compounds : InP, InAs, GaAs, GaP, InGaAs, and InGaAsP / / Sadao Adachi [[electronic resource]]
(Visualizza in formato marc)
(Visualizza in BIBFRAME)
| Autore: |
Adachi Sadao <1950->
|
| Titolo: |
Physical properties of III-V semiconductor compounds : InP, InAs, GaAs, GaP, InGaAs, and InGaAsP / / Sadao Adachi [[electronic resource]]
|
| Pubblicazione: | New York, : Wiley, c1992 |
| Descrizione fisica: | 1 online resource (xviii, 318 p. ) : ill. ; |
| Disciplina: | 537.6/226 |
| Soggetto topico: | Gallium arsenide semiconductors |
| Indium alloys | |
| Indium phosphide | |
| Electricity & Magnetism | |
| Physics | |
| Physical Sciences & Mathematics | |
| Soggetto genere / forma: | Electronic books |
| Note generali: | "A Wiley-Interscience publication." |
| Nota di bibliografia: | Includes bibliographical references and indexes. |
| Sommario/riassunto: | This study explores the key properties of III-V compounds and presents the various material parameters and constants of these semiconductors for a number of research applications. The experimental and theoretical data has been summarized in tabular, graphical and functional formats. |
| Titolo autorizzato: | Physical properties of III-V semiconductor compounds |
| ISBN: | 1-280-56099-1 |
| 9786610560998 | |
| 3-527-60281-X | |
| Formato: | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione: | Inglese |
| Record Nr.: | 9910146077403321 |
| Lo trovi qui: | Univ. Federico II |
| Opac: | Controlla la disponibilità qui |