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Titolo: |
Defects and diffusion in semiconductors . XIV
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Pubblicazione: | Durnten-Zurich, Switzerland : , : Trans Tech Publications, , [2013] |
©2013 | |
Descrizione fisica: | 1 online resource (222 p.) |
Disciplina: | 621.38152 |
Soggetto topico: | Semiconductors - Defects |
Semiconductors - Diffusion | |
Note generali: | Description based upon print version of record. |
Nota di bibliografia: | Includes bibliographical references and indexes. |
Nota di contenuto: | Defects and Diffusion in Semiconductors XIV; Table of Contents; An Experimental Study of the Thermal Properties of Modified 9Cr-1Mo Steel; Physico-Mechanical Properties of Sintered Iron-Silica Sand Nanoparticle Composites: A Preliminary Study; Defect and Dislocation Density Parameters of 5251 Al Alloy Using Positron Annihilation Lifetime Technique; A Novel Computational Strategy to Enhance the Ability of Elaborate Search by Entire Swarm to Find the Best Solution in Optimization of AMCs |
Synthesis and Characterization of Novel Nanoceramic Magnesium Ferrite Material Doped with Samarium and Dysprosium for Designing - Microstrip Patch AntennaZnO Varistor Defective Gd and Pr Ions; Injecting CO2 and Pumping Out Saline Formation Water Simultaneously to Control Pressure Build-Up while Storing CO2 in Deep Saline Aquifers; Studying the Effect of Low α-Radiation Doses on CR-39 Polymers Using Positron Annihilation Lifetime and Mechanical Properties; Abstracts; Keywords Index; Authors Index | |
Sommario/riassunto: | This 14th volume in the series covers the latest results in the field of Defects and Diffusion in Semiconductor. The issue also includes some original papers: An Experimental Study of the Thermal Properties of Modified 9Cr-1Mo Steel; Physico-Mechanical Properties of Sintered Iron-Silica Sand Nanoparticle Composites: A Preliminary Study; Defect and Dislocation Density Parameters of 5251 Al Alloy Using Positron Annihilation Lifetime Technique; A Novel Computational Strategy to Enhance the Ability of Elaborate Search by Entire Swarm to Find the Best Solution in Optimization of AMCs; Synthesis and |
Titolo autorizzato: | Defects and diffusion in semiconductors ![]() |
ISBN: | 3-03813-986-6 |
Formato: | Materiale a stampa ![]() |
Livello bibliografico | Monografia |
Lingua di pubblicazione: | Inglese |
Record Nr.: | 9910822255003321 |
Lo trovi qui: | Univ. Federico II |
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