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Defects and diffusion in semiconductors . XIV



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Titolo: Defects and diffusion in semiconductors . XIV Visualizza cluster
Pubblicazione: Durnten-Zurich, Switzerland : , : Trans Tech Publications, , [2013]
©2013
Descrizione fisica: 1 online resource (222 p.)
Disciplina: 621.38152
Soggetto topico: Semiconductors - Defects
Semiconductors - Diffusion
Note generali: Description based upon print version of record.
Nota di bibliografia: Includes bibliographical references and indexes.
Nota di contenuto: Defects and Diffusion in Semiconductors XIV; Table of Contents; An Experimental Study of the Thermal Properties of Modified 9Cr-1Mo Steel; Physico-Mechanical Properties of Sintered Iron-Silica Sand Nanoparticle Composites: A Preliminary Study; Defect and Dislocation Density Parameters of 5251 Al Alloy Using Positron Annihilation Lifetime Technique; A Novel Computational Strategy to Enhance the Ability of Elaborate Search by Entire Swarm to Find the Best Solution in Optimization of AMCs
Synthesis and Characterization of Novel Nanoceramic Magnesium Ferrite Material Doped with Samarium and Dysprosium for Designing - Microstrip Patch AntennaZnO Varistor Defective Gd and Pr Ions; Injecting CO2 and Pumping Out Saline Formation Water Simultaneously to Control Pressure Build-Up while Storing CO2 in Deep Saline Aquifers; Studying the Effect of Low α-Radiation Doses on CR-39 Polymers Using Positron Annihilation Lifetime and Mechanical Properties; Abstracts; Keywords Index; Authors Index
Sommario/riassunto: This 14th volume in the series covers the latest results in the field of Defects and Diffusion in Semiconductor. The issue also includes some original papers: An Experimental Study of the Thermal Properties of Modified 9Cr-1Mo Steel; Physico-Mechanical Properties of Sintered Iron-Silica Sand Nanoparticle Composites: A Preliminary Study; Defect and Dislocation Density Parameters of 5251 Al Alloy Using Positron Annihilation Lifetime Technique; A Novel Computational Strategy to Enhance the Ability of Elaborate Search by Entire Swarm to Find the Best Solution in Optimization of AMCs; Synthesis and
Titolo autorizzato: Defects and diffusion in semiconductors  Visualizza cluster
ISBN: 3-03813-986-6
Formato: Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione: Inglese
Record Nr.: 9910822255003321
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Serie: Diffusion and defect data. : Pt. A, . -Defect and diffusion forum ; ; 332.