Compact hierarchial bipolar transistor modeling with HICUM [[electronic resource] /] / Michael Schröter, Anjan Chakravorty

• Autore: Schröter Michael
• Pubblicazione: Hackensack, N.J., : World Scientific, 2010
• Descrizione fisica: 1 online resource (740 p.)
• Disciplina: 621.381528
• Soggetto topico: Bipolar transistors
• Altri autori: ChakravortyAnjan
• Note generali: Description based upon print version of record.
• Nota di bibliografia: Includes bibliographical references and index.
• Nota di contenuto: Foreword; Biographies; Preface; Table of Contents; List of Often Used Acronyms and Symbols; Chapter 1 Introduction; Chapter 2 Device Modeling Overview; Chapter 3 Theory of Homojunction Bipolar Transistors; Chapter 4 Advanced Theory; Chapter 5 Geometry (Layout) Scaling; Chapter 6 Temperature Effects; Chapter 7 Compact Noise Modeling; Chapter 8 HICUM Level2; Chapter 9 Parameter Determination for HICUM/L2; Chapter 10 Model Hierarchy; Chapter 11 Application Examples; Chapter 12 Future Trends; Index
• Sommario/riassunto: ""Compact Hierarchical Bipolar Transistor Modeling with HICUM"" will be of great practical benefit to professionals from the process development, modeling and circuit design community who are interested in the application of bipolar transistors, which include the SiGe:C HBTs fabricated with existing cutting-edge process technology. This book begins with an overview on the different device designs of modern bipolar transistors, along with their relevant operating conditions; while the subsequent chapter on transistor theory is subdivided into a review of mostly classical theories, brought into
• Titolo autorizzato: Compact hierarchial bipolar transistor modeling with HICUM
• ISBN: 1-283-14370-4; 9786613143709; 981-4273-22-8
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910819617503321
• Lo trovi qui: Univ. Federico II
• Serie: International series on advances in solid state electronics and technology.