Topics in high field transport in semiconductors [[electronic resource] /] / editors, Kevin F. Brennan, P. Paul Ruden

• Pubblicazione: Singapore ; ; River Edge, NJ, : World Scientific, c2001
• Descrizione fisica: 1 online resource (268 p.)
• Disciplina: 537.622; 621.3815/2; 621.38152
• Soggetto topico: Semiconductors; Electron transport
• Altri autori: BrennanKevin F. <1956-> RudenP. Paul
• Note generali: Description based upon print version of record.
• Nota di bibliografia: Includes bibliographical references.
• Nota di contenuto: Foreword; CONTENTS; Quantum Transport in Semiconductor Devices; 1. Introduction; 2. Quantum vs. Classical: Where does the Difference Arise?; 3. Non-Equilibrium Green's Functions; 4. Trajectories Dissipation and Reversibility; 5. The Initial Condition for the Green's Function; 6. The Equations of Motion; 7. Wigner Equation of Motion; 8. Summary; Quantum Transport and its Simulation with the Wigner-Function Approach; 1. Introduction; 2. Elementary Definition of the Wigner Function; 3. Main Properties of the Wigner Function; 4. The Coefficients fnm(r P) Coherent Evolution; 5. Dynamical Equation ; 6. Phonon Interaction 7. Wigner Paths; 8. Monte Carlo Simulation; 9. p and w Dependent Wigner Function from the G< Green Function; 10. Conclusions; Bloch Dynamics in Spatially Local Inhomogeneous Electric Fields; 1. Introduction; 2. Formalism; 3. Local Inhomogeneities; 4. Analysis for Constant Electric Field; 5. Summary and Conclusion; Collision Broadening through Sequences of Scattering Events: Theory Consequences and Modeling within Semiclassical Monte Carlo; 1. Introduction; 2. Theory; 3. Illustrative Quantum Transport Simulations; 4. Improved CBMC Algorithm; 5. Simplified CBMC Simulations ; 6. Full-Band NAB-CBMC Simulations 7. Conclusion; Transport in a Polarization-Induced 2D Electron Gas; 1. Introduction; 2. Polarization-Induced Electrons; 3. The Boltzmann Equation; 4. Electron-Electron Scattering; 5. Phonon Scattering; 6. Electron-Electron Scattering Dominated Transport of 2D Gas in GaN/AIGaN Quantum Wells; 7. Summary; 8. Acknowledgements; 9. References; Impact Ionization and High Field Effects in Wide Band Gap Semiconductors; 1. Introduction; 2. Impact Ionization Rate; 3. Ensemble Monte Carlo Simulation and Impact Ionization Coefficient; 4. Discussion and Conclusions ; Simulation of Carrier Transport in Wide Band Gap Semiconductors 1. Introduction; 2. Transport Model for the Wide Band Gap Semiconductors; 3. Bulk Material Results; 4. Conclusions; Electrical Transport in Organic Semiconductors; 1. Introduction; 2. Time-of-Flight Mobility Measurements; 3. Mobility from Single Carrier SCL Diode I-V Characteristics; 4. Mobility Models; 5. Conclusion
• Sommario/riassunto: This book examines some of the charge carrier transport issues encountered in the field of modern semiconductor devices and novel materials. Theoretical approaches to the understanding and modeling of the relevant physical phenomena, seen in devices that have very small spatial dimensions and that operate under high electric field strength, are described in papers written by leading experts and pioneers in this field. In addition, the book examines the transport physics encountered in novel materials such as wide band gap semiconductors (GaN, SiC, etc.) as well as organic semiconductors. Topic
• Titolo autorizzato: Topics in high field transport in semiconductors
• ISBN: 1-281-95146-3; 9786611951467; 981-279-992-3
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910782394503321
• Lo trovi qui: Univ. Federico II
• Serie: Selected topics in electronics and systems ; ; 22.