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Nanometer CMOS / / by Juin J. Liou, Frank Schwierz and Hei Wong



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Autore: Liou Juin J. Visualizza persona
Titolo: Nanometer CMOS / / by Juin J. Liou, Frank Schwierz and Hei Wong Visualizza cluster
Pubblicazione: Singapore : , : Pan Stanford Publishing, an imprint of Pan Stanford, , 2010
Edizione: First edition.
Descrizione fisica: 1 online resource (347 p.)
Disciplina: 621.395
Soggetto topico: Metal oxide semiconductors, Complementary
Nanoelectronics
Nanotechnology
Soggetto genere / forma: Electronic books.
Persona (resp. second.): SchwierzFrank
WongHei
Note generali: Description based upon print version of record.
Nota di bibliografia: Includes bibliogrpahical references and index.
Nota di contenuto: Cover; Preface; Contents; 1. The Evolution of Silicon Electronics; 2. MOSFET Theory; 3. Nanoscale MOSFETs; 4. MOSFETs for RF Applications; 5. Overview of Nanometer CMOS Technology; 6. Outlook; Appendix A Frequently Used Symbols; Appendix B Physical Constants and Unit Conversions; Appendix C Important Properties of Si and SiO2; Appendix D Carrier Concentrations, Energy, and Potential; Appendix E Frequently Used Abbreviations; Index
Sommario/riassunto: This book presents the material necessary for understanding the physics, operation, design, and performance of modern MOSFETs with nanometer dimensions. It offers a brief introduction to the field and a thorough overview of MOSFET physics, detailing the relevant basics. The authors apply presented models to calculate and demonstrate transistor characteristics, and they include required input data (e.g., dimensions, doping) enabling readers to repeat the calculations and compare their results. The book introduces conventional and novel advanced MOSFET concepts, such as multiple-gate structures or alternative channel materials. Other topics covered include high-k dielectrics and mobility enhancement techniques, MOSFETs for RF (radio frequency) applications, MOSFET fabrication technology.
Titolo autorizzato: Nanometer CMOS  Visualizza cluster
ISBN: 1-315-27290-3
981-4241-22-9
Formato: Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione: Inglese
Record Nr.: 9910459294003321
Lo trovi qui: Univ. Federico II
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