Micro and nanoelectronics devices, circuits and systems : select proceedings of MNDCS 2022 / / edited by Trupti Ranjan Lenka, Durgamadhab Misra, and Lan Fu

• Pubblicazione: Gateway East, Singapore : , : Springer, , [2022]; ©2022
• Descrizione fisica: 1 online resource (519 pages)
• Disciplina: 621.381
• Soggetto topico: Nanoelectronics; Microelectronics
• Persona (resp. second.): MisraDurgamadhab; FuLan; LenkaTrupti Ranjan
• Nota di bibliografia: Includes bibliographical references and index.
• Nota di contenuto: Intro -- Preface -- Acknowledgements -- Contents -- About the Editors -- Micro/Nanoelectronics Devices -- Development of Ni-Doped Zinc Oxide Films via Sol-Gel Synthesis -- 1 Introduction -- 2 Experimental -- 3 Results and Discussion -- 4 Conclusion -- References -- Modeling and Optimization Study of HIT-CBTSSe Tandem Solar Cell -- 1 Introduction -- 2 Simulation Methodology -- 3 Results and Discussion -- 3.1 Performance Analysis of HIT-CBTSSe Tandem Solar Cell -- 3.2 Photo Generation Rate and Recombination Profile -- 3.3 Electron and Hole Current Densities in Tandem Solar Cell -- 4 Conclusion -- References -- High-k Dielectric Influence on Recessed-Gate Gallium Oxide MOSFETs -- 1 Introduction -- 2 Device Dimension and Simulation Set-up -- 3 Result Analysis -- 3.1 RF Performance -- 4 Conclusion -- References -- Design and Temperature Analysis of Si0.8Ge0.2-Based Extended Gate Gate-All-Around TFET -- 1 Introduction -- 2 Device Design and Simulation Parameters -- 3 Results and Discussion -- 3.1 Temperature's Influence on Linearity Parameters -- 3.2 Influence of Temperature on Device Electrical Performance -- 4 Conclusion -- References -- Optimization of Subthreshold Parameters of Graded-Channel Gate-Stack Double-Gate (GC-GS-DG) MOSFET Using PSO-CFIWA -- 1 Introduction -- 2 Subthreshold Parameters of the Device -- 3 Evolutionary Techniques Employed -- 4 Discussions of Simulation Results -- 5 Conclusion -- References -- A Comparative Study on Electrical Characteristics of Bulk, SOI, and DG MOSFET -- 1 Introduction -- 2 State of Art -- 3 Results and Discussions -- 3.1 Structures -- 3.2 Simulations -- 3.3 Device Characteristics and Calculations -- 4 Comparative Analysis -- 5 Conclusion -- References -- Optical Analysis of Far-Field Intensity on Organic Light-Emitting Diode to Reduce Surface Plasmon Losses -- 1 Introduction. ; 2 Design of Organic Light-Emitting Diode with Nano-Grated Cathode Structure -- 3 Methodology -- 4 Numerical Simulation and Results -- 5 Conclusion -- References -- Analog Performance of Normally-On Si3N4/AlN/β-Ga2O3 HEMT -- 1 Introduction -- 2 Integrants of Gate Leakage Current -- 3 Device Design, Structure and Simulation Parameters -- 4 Simulation Results and Discussion -- 5 Conclusion -- References -- Modulation of Electronic Properties in Double Quantum Well-Based FET Structure -- 1 Introduction -- 2 Model Development -- 3 Results and Discussion -- 4 Conclusion -- References -- Comparative Analysis of Different Types of Gate Field Plate AlGaN/GaN HEMT -- 1 Introduction -- 2 Device Structure -- 3 Result and Discussion -- 4 Conclusion -- References -- Advantages of Polarization Engineered Quantum Barriers in III-Nitride Deep Ultraviolet Light-Emitting Diodes: An Electron Blocking Layer Free Approach -- 1 Introduction -- 2 Device Structure -- 3 Results and Discussions -- 4 Conclusion -- References -- Investigation on Thermodynamic Properties of Novel Ag2SrSn(S/Se)4 Quaternary Chalcogenide for Solar Cell Applications: A Density Functional Theory Study -- 1 Introduction -- 2 Computational Details -- 3 Results and Discussion -- 3.1 Thermodynamic Properties -- 3.2 Vickers Hardness -- 4 Conclusion -- References -- Impact of Carcinogenic Benzene on Electronic Properties of Mn- and Fe-Doped MoSe2 Monolayer -- 1 Introduction -- 2 Computational Details -- 3 Result and Discussion -- 3.1 Geometrical Information -- 3.2 Adsorption Energy with Charge Transfer -- 4 Recovery Time -- 5 Conclusion -- References -- Growth of Vertical TiO2-Nanowire Photoanode for Application of Dye-Sensitized Solar Cell -- 1 Introduction -- 2 Experimental Details -- 2.1 Materials -- 2.2 Photoanode Preparation -- 2.3 Dye Preparation and Counter Electrode Preparation. ; 2.4 Fabrication of DSSCs -- 3 Results and Discussion -- 3.1 Sample Structural Analysis -- 3.2 UV-Vis Spectroscopy and Photoluminescence Spectroscopy -- 3.3 Device Characterization -- 4 Conclusion -- References -- Multiband Photodetection Using TiO2 Thin Film Deposited on Si Substrate Using E-beam Evaporation Technique -- 1 Introduction -- 2 Experimental Details -- 3 Results and Discussion -- 3.1 XRD Analysis -- 3.2 Optical Properties Analysis -- 3.3 Photodetector Device Analysis -- 4 Conclusion -- References -- Evolution of Tunnel Field-Effect Transistor and Scope in Low Power Applications: A Detailed Review -- 1 Introduction -- 2 Latest Tunnel FET Architectures -- 3 Comparative Analysis -- 4 Conclusion -- References -- Design and Analysis of Non-uniform Body with Dual Material FET-Based Digital Inverter -- 1 Introduction -- 2 Device Structure -- 3 Simulation Methodologies -- 4 Results and Discussion -- 5 Conclusion -- References -- Performance Analysis of Metal-Ferroelectric-Insulator-Semiconductor Negative Capacitance FET for Various Channel Materials -- 1 Introduction -- 2 Device Structure and Simulation -- 3 Results and Discussion -- 4 Conclusion -- References -- Impact of Tapered Dielectric on a Gallium Nitride Metal Oxide Semiconductor High Electron Mobility Transistor (MOSHEMT) Towards Biosensing Applications -- 1 Introduction -- 2 Device Dimensions and Simulation Setup -- 2.1 Single Gate MOSHEMT with Tapered Oxide -- 2.2 Single Gate MOSHEMT with a Tapered Dielectric and a Cavity Under the Gate -- 3 Results and Discussions -- 3.1 Device Calibration -- 3.2 Single Gate MOSHEMT with a Tapered Dielectric -- 4 Conclusion -- References -- Carrier Transport and Radiative Recombination Rate Enhancement in GaN/AlGaN Multiple Quantum Well UV-LED Using Band Engineering for Light Technology -- 1 Introduction -- 2 Device Structure and Numerical Framework. ; 3 Results and Analysis -- 4 Conclusion -- References -- Comparative Study of Electrical Performances of Bio-Electrochemical Cell -- 1 Introduction -- 2 Materials and Methods -- 3 Experimental Setup of Cells -- 4 Chemical Reactions of Bio-Electrochemical Cells -- 5 Results and Discussions -- 5.1 Open-Circuit Voltage of Cells -- 5.2 Short-Circuit Current -- 5.3 Capacity of Cells -- 5.4 Maximum Power (Pmax) of Cells -- 5.5 Average Performances of Cells -- 6 Conclusion -- References -- Performance Evaluation of Silver-Doped CZTSe Kesterite Solar Cell with p+-CZTSe as BSF Layer -- 1 Introduction -- 2 Device Structure -- 3 Result and Analysis -- 4 Conclusion -- References -- Design and Simulation of Si and Ge Double-Gate Tunnel Field-Effect Transistors with High-κ Al2O3 Gate Dielectric: DC and RF Analysis -- 1 Introduction -- 2 Device Structure and Simulation Setup -- 3 Results and Discussions -- 3.1 DC Performance -- 3.2 RF Performance -- 4 Conclusion -- References -- Performance Assessment of Electrostatically Doped Dual Pocket Vertical Tunnel Field-Effect Transistor -- 1 Introduction -- 2 Structural Descriptions with Simulation Approach -- 3 Results and Discussions -- 3.1 Evaluation of Short-Channel Effects (SCE) Parameters -- 3.2 Analog Performance Analysis -- 3.3 Impact for Variation of k of Oxide Layer -- 3.4 RF Performance Analysis -- 3.5 Impact for Variation of k of Oxide Layer -- 4 Performance Assessment Between L-TFET, SP-TFET, and Proposed Model -- 5 Conclusion -- References -- A High Efficiency Class AB AlGaN/GaN HEMT Power Amplifier for High Frequency Applications -- 1 Introduction -- 2 Desirable Properties of GaN -- 2.1 High Saturation Velocity -- 3 HEMT Structure and Its Working -- 3.1 Hetero-Structure -- 3.2 2-Dimensional Electron Gas (2DEG) -- 3.3 Working Principle -- 4 HEMT as Power Amplifier -- 5 Design and Simulation Results. ; 6 Conclusion -- References -- The Anisotropy and Birefringence of Monolayer WS2 Semiconductor -- 1 Introduction -- 2 Methodology -- 3 Results and Discussion -- 3.1 Electronic and Optical Properties -- 4 Conclusions -- References -- Implementation of Zinc Sulfide (ZnS) as a Suitable Buffer Layer for CZTS Solar Cell from Numerical Analysis -- 1 Introduction -- 2 Device Structure and Approach -- 3 Results and Discussion -- 3.1 Deviation of Absorber Layer Thickness -- 3.2 Variation of ZnS Buffer-Layer Thickness -- 3.3 Effect of ZnS-Layer Bandgap -- 3.4 Temperature Effects -- 4 Conclusion -- References -- The Effect of Quantum Well Base in GaAs-Based HBT -- 1 Introduction -- 2 Schematic Design of the Proposed QWBHBT -- 3 Results and Discussion -- 3.1 DC Characteristics -- 3.2 I-V Characteristics -- 3.3 Small Signal Characteristics -- 3.4 Minimum Noise Figure -- 4 Simulation-Based Comparison Analysis -- 5 Conclusion -- References -- Micro/Nanoelectronics Circuits -- Power and Area Trade-Off for Accuracy-Controlled Multiplier for Image Compression Using DCT -- 1 Introduction -- 2 Literature Review -- 3 Accuracy-Controlled Multiplier (ACM) -- 4 Simulation Results -- 4.1 Implementation and Functional Verification -- 4.2 Synthesis -- 5 Experimental Setup DCT -- 6 Result and Discussion -- 7 Conclusion -- References -- Carry Select Adder Using Binary Excess-1 Converter and Ripple Carry Adder -- 1 Introduction -- 2 Literature Survey -- 3 Existing Technique -- 4 Proposed Technique -- 5 Results and Discussions -- 6 Conclusion -- References -- Design and Analysis CMOS-Based DRAM Cell Structures for High-Performance Embedded System -- 1 Introduction -- 2 Dynamic Memory -- 2.1 Two-Transistor DRAM -- 2.2 Three-Transistor DRAM -- 2.3 Four-Transistor DRAM -- 3 Three-Transistor and One-Diode DRAM -- 4 Performance Parameter Analysis -- 5 Conclusion -- References. ; Optimized RTL Design of a Vending Machine Through FSM Using Verilog HDL.
• Titolo autorizzato: Micro and Nanoelectronics Devices, Circuits and Systems
• ISBN: 981-19-2308-6
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910627245603321
• Lo trovi qui: Univ. Federico II
• Serie: Lecture Notes in Electrical Engineering