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Frontiers in electronics [[electronic resource] /] / editors, Sorin Cristoloveanu, Michael S. Shur



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Titolo: Frontiers in electronics [[electronic resource] /] / editors, Sorin Cristoloveanu, Michael S. Shur Visualizza cluster
Pubblicazione: Singapore, : World Scientific Pub. Co., c2009
Descrizione fisica: 1 online resource (335 p.)
Disciplina: 621.381
Soggetto topico: Electronics - Technological innovations
Nanoelectromechanical systems
Optoelectronics
Metal oxide semiconductors, Complementary
Soggetto genere / forma: Electronic books.
Altri autori: CristoloveanuSorin  
ShurMichael  
Note generali: "The Workshop on Frontiers in Electronics -- WOFE-07 -- took place in Cozumel, in December of 2007."--P. v.
Nota di bibliografia: Includes bibliographical references and index.
Nota di contenuto: CONTENTS; Preface; Chapter 1. Ultimate CMOS, Novel MOSFETS, and Alternative Transistors; Challenges and Progress in III-V MOSFETs for CMOS Circuits S. Oktyabrsky, M. Yakimov, V. Tokranov, R. Kambhampati, H. Bakhru, S. Koveshnikov, W. Tsai, F. Zhu and J. Lee; 1. Introduction; 2. MOSFET vs. HEMT; 3. Wish List for III-V CMOS; 4. Interface Passivation Technologies; 5. Amorphous Si Interface Passivation Layer; 6. Enhancement- Mode Inversion-Type MOSFET; 7. Conclusions; Acknowledgements; References
Short Channel, Floating Body, and 3D Coupling Effects in Triple-Gate MOSFET K.-I. Na, J.-H. Lee S. Cristoloveanu, Y.-H. Bae, P. Patruno and W. Xiong1. Introduction; 2. Experiment; 3. Short Channel Effect; 4. Three Dimensional Coupling Effect; 5. Gate-Induced Floating Body Effect (GIFBE); 6. Conclusions; Acknowledgments; References; Analog and Digital Performance of the Screen-Grid Field Effect Transistor (SGrFET) K. Fobelets, P. W. Ding, Y. Shadrokh and J. E. Velazquez-Perez; 1. Introduction; 2. The simulated device structures; 3. Analog RF performance of the devices
4. Digital performance of the devices 5. Conclusions; Acknowledgments; References; Analytical Characterization and Modeling of Shielded Test Structures for RF-CMOS E. Torres-Rios, R. Torres-Torres, R. Murphy-Arteaga and E. A. GutieĢrrez-D.; 1. Introduction; 2. Description of fabricated test structures; 3. General models for RF shielded test structures; 3.1 General model for the shielded test structure with pad probe design at the second metal level; 3.2 General model for the shielded test structure with pad probe design at the third metal level; 4. Equivalent circuit modeling
4.1 Calculation of the model parameters 4.2 Analytical parameter extraction; 5. Results and discussion; 6. Conclusions ; 7. Acknowledgments; References; Germanium on Sapphire H. S. Gamble, P. T. Baine, H. Wadsworth, Y. H. Low, P. V. Rainey, F. H. Ruddell, B. M. Armstrong, D. W. McNeill and S. J. N. Mitchell; 1. Introduction; 2. Semiconductor properties and applications; 3. Sapphire properties and applications; 4. Germanium on Sapphire; 5. Passives and Parasitics; 6. Optical Detection; 7. Germanium ICs; 8. Summary and Conclusions; References
Single Event Effects in the Nano Era M. L. Alles, L. W. Massengill, R. D. Schrimpf, R. A. Weller and K. F. Galloway 1. Introduction; 2. Single Event Effects; 3. Differential Scaling; 4. Mitigation; 5. Analysis; 6. Opportunities; 7. Conclusions; Acknowledgments; References; An Efficient Numerical Method of DC Modeling for Power MOSFET, MESFET and AlGaN/GaN HEMT T. Rahman, M. A. Huque and S. K. Islam; 1. Introduction; 2. Mathematical Theory; 3. Model Development and Verification Using Analytical Data; 3.1. MOSFET; 3.2. MESFET; 4. Model Development and Verification Using Experimental Data
5. Conclusion
Sommario/riassunto: <i>Frontiers in Electronics</i> contains the selected best papers presented at the Workshop on Frontiers in Electronics (WOFE-07). This meeting was the fifth in the series of WOFE workshops, and strongly reinforced the tradition of scientific quality and visionary research. The issues addressed ranged from THz and infrared electronics to nanoelectronics and photonics. The papers focused on the fabrication, characterization and applications of nanodevices; wide band gap structures; and state-of-the-art FETs. The participants also discussed the device physics and processing issues including asp
Titolo autorizzato: Frontiers in electronics  Visualizza cluster
ISBN: 1-282-75802-0
9786612758027
981-4273-02-3
Formato: Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione: Inglese
Record Nr.: 9910456151803321
Lo trovi qui: Univ. Federico II
Opac: Controlla la disponibilitĆ  qui
Serie: Selected topics in electronics and systems ; ; v. 50.