Physics and applications of CVD diamond / / Satoshi Koizumi, Christoph Nebel, and Milos Nesladek

• Autore: Koizumi Satoshi
• Pubblicazione: Weinheim, Germany : , : WILEY-VCH Verlag GmbH & Co. KGaA, , 2008; ©2008
• Descrizione fisica: 1 online resource (376 p.)
• Disciplina: 621.38152
• Soggetto topico: Chemical vapor deposition; Diamonds, Artificial
• Soggetto genere / forma: Electronic books.
• Persona (resp. second.): NebelChristoph; NesladekMilos
• Note generali: Description based upon print version of record.
• Nota di bibliografia: Includes bibliographical references at the end of each chapters and index.
• Nota di contenuto: Physics and Applications of CVD Diamond; Contents; Preface; 1 Future Perspectives for Diamond; 1.1 The Status Diamond and the Working Diamond; 1.2 On Diamond's Future; 1.3 The Electron in Carbon Country; 1.4 Social Contexts: Twenty-First Century Needs; 1.5 The Biomedical and Life Sciences Context; 1.6 Fusion: Opportunity and Challenge; 1.7 Extending the Information Technologies; 1.8 Can the Quantum be Tamed?; 1.9 Conclusions: Beyond Those Niche Applications; 2 Growth and Properties of Nanocrystalline Diamond Films; 2.1 Introduction; 2.2 Growth; 2.3 Raman Spectra of NCD and UNCD Films ; 2.4 Optical Properties of UNCD and B-NCD Films2.5 Doping and Transport Measurements; 2.6 Conclusions; 3 Chemical Vapor Deposition of Homoepitaxial Diamond Films; 3.1 Introduction and Historical Background; 3.1.1 Diamond - A Superior Semiconducting Material; 3.1.2 Low-Pressure Chemical Vapor Deposition; 3.1.3 Homoepitaxial Diamond Films; 3.2 Effects of Process Parameters on Homoepitaxial Diamond Film Quality; 3.2.1 Methane Concentration; 3.2.2 Substrate Temperature; 3.2.3 Total Gas Pressure; 3.2.4 Crystal Orientation; 3.2.5 Misorientation Angle; 3.2.6 Substrate Quality and Preparation Method ; 3.2.7 Impurity Doping into Homoepitaxial Diamond3.3 Homoepitaxial Diamond Growth by High-Power Microwave-Assisted Chemical Vapor Deposition; 3.3.1 Growth Conditions; 3.3.2 Growth Rate; 3.3.3 Surface Morphology; 3.3.4 Optical Properties; 3.3.5 Boron Doping; 3.3.6 Nitrogen Doping; 3.3.7 Large Area Deposition; 3.4 Conclusions and Perspectives; 4 Heteroepitaxy of Diamond; 4.1 Cubic Boron Nitride; 4.2 Silicon and Silicon Carbide; 4.3 Nickel and Cobalt; 4.4 Platinum; 4.5 Iridium; 4.6 Recent Progress in Heteroepitaxy of Diamond on Iridium; 4.7 Other Trials for Heteroepitaxy of Diamond; 4.8 Summary ; 5 Electrochemical Properties of Undoped Diamond5.1 Introduction; 5.2 Surface Electronic Properties of Diamond Covered with Adsorbates; 5.2.1 Contact Potential Difference (CPD) Experiments; 5.2.2 Current-Voltage (IV) Properties; 5.2.3 Capacitance-Voltage (CV) Experiments; 5.2.4 Two Dimensional Properties of a Perfectly H-Terminated Diamond Surface; 5.2.5 In-Plane Capacitance-Voltage Properties of Al on H-Terminated Diamond; 5.2.6 Hole Carrier Propagation and Scattering in the Surface Layer; 5.3 Surface Electronic Properties of Diamond in Electrolyte Solutions ; 5.3.1 Redox Couple Interactions with Undoped H-Terminated CVD Diamond5.3.2 Electrochemical Exchange Reactions of H-Terminated Diamond with Electrolytes and Redox Couples; 5.3.3 Ion Sensitive Field Effect Transistor (ISFET) from Undoped CVD Diamond; 5.4 Discussion and Conclusions; 5.5 Summary; 6 Biosensors from Diamond; 6.1 Introduction; 6.2 Materials and Methods; 6.2.1 CVD Diamond Growth, Surface Modifications and Contact Deposition; 6.2.2 Photochemical Surface Modification of Undoped Diamond; 6.2.3 Electrochemical Surface Functionalization ; 6.2.4 HeteroBifunctional CrossLinking and DNA Attachment
• Sommario/riassunto: Here, leading scientists report on why and how diamond can be optimized for applications in bioelectronic and electronics. They cover such topics as growth techniques, new and conventional doping mechanisms, superconductivity in diamond, and excitonic properties, while application aspects include quantum electronics at room temperature, biosensors as well as diamond nanocantilevers and SAWs.Written in a review style to make the topic accessible for a wider community of scientists working in interdisciplinary fields with backgrounds in physics, chemistry, biology and engineering, this is e
• Titolo autorizzato: Physics and applications of CVD diamond
• ISBN: 1-281-94715-6; 9786611947156; 3-527-62317-5; 3-527-62318-3
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910144120403321
• Lo trovi qui: Univ. Federico II