Charge Transport in Low Dimensional Semiconductor Structures : The Maximum Entropy Approach / Vito Dario Camiola, Giovanni Mascali, Vittorio Romano

• Autore: Camiola, Vito Dario
• Pubblicazione: Cham, : Springer, 2020
• Titolo uniforme: Charge Transport in Low Dimensional Semiconductor Structures
• Descrizione fisica: xvi, 337 p. : ill. ; 24 cm
• Soggetto topico: 35Q20 - Boltzmann equations [MSC 2020]; 35Q55 - NLS equations (nonlinear Schroedinger equations) [MSC 2020]; 35Q82 - PDEs in connection with statistical mechanics [MSC 2020]; 82-XX - Statistical mechanics, structure of matter [MSC 2020]; 82D37 - Statistical mechanical studies of semiconductors [MSC 2020]; 82D80 - Statistical mechanical studies of nanostructures and nanoparticles [MSC 2020]
• Soggetto non controllato: Charge transport in confined structure; Charge transport in graphene; DG-MOSFET; Maximum Entropy Principle; Simulation of electron devices
• Altri autori: Mascali, Giovanni Romano, Vittorio
• Titolo autorizzato: Charge Transport in Low Dimensional Semiconductor Structures
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: VAN00248767
• Lo trovi qui: Univ. Vanvitelli
• Localizzazioni e accesso elettronico: http://doi.org/10.1007/978-3-030-35993-5
• Serie: Mathematics in industry Berlin [etc.] . -Springer , 2002- ; 31; The European Consortium for Mathematics in Industry. Subseries Berlin [etc.] . -Springer