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[null,"1.","Record Nr.",null,"UNISOBSOBE00038556"]
[null,null,"Autore",null,"Lucrezi, Francesco"]
[null,null,"Titolo",null," Oralità e scrittura / Francesco Lucrezi, Massimiliano Marazzi, Amedeo Visconti"]
[null,null,"Pubbl/distr/stampa",null,"Napoli, : Editoriale scientifica, 2013"]
[null,null,"ISBN",null,"9788883424904"]
[null,null,"Descrizione fisica",null,"143 p. ; 21 cm"]
[null,null,"Collana",null,"Fondamenti del diritto antico ; 1"]
[null,null,"Lingua di pubblicazione",null,"Italiano"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,"2.","Record Nr.",null,"UNINA9910140494003321"]
[null,null,"Autore",null,"Lacaze Pierre-Camille"]
[null,null,"Titolo",null,"Non-volatile memories / / Pierre-Camille Lacaze, Jean-Christophe Lacroix"]
[null,null,"Pubbl/distr/stampa",null,"Hoboken, New Jersey : , : ISTE Ltd/John Wiley and Sons Inc, , 2014"]
[null,null,"ISBN",null,"1-118-79012-X"]
[{"$nulls":4},"1-118-78998-9"]
[{"$nulls":4},"1-118-79028-6"]
[null,null,"Descrizione fisica",null,"1 online resource (305 p.)"]
[null,null,"Collana",null,"Electronics engineering series"]
[null,null,"Disciplina",null,"621.39732"]
[null,null,"Soggetti",null,"Flash memories (Computers)"]
[{"$nulls":4},"Computer storage devices"]
[null,null,"Lingua di pubblicazione",null,"Inglese"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,null,null,"Note generali","Description based upon print version of record."]
[null,null,null,"Nota di bibliografia","Includes bibliographical references and index."]
[null,null,"Nota di contenuto",null,"Cover; Title Page; Copyright; Contents; Acknowledgments; Preface; PART 1: Information Storage and the State of the Art of Electronic Memories; 1: General Issues Related to Data Storage and Analysis Classification of Memories and Related Perspectives; 1.1. Issues arising from the flow of digital information; 1.2. Current electronic memories and their classification; 1.3. Memories of the future; 2: State of the Art of DRAM, SRAM, Flash, HDD and MRAM Electronic Memories; 2.1. DRAM volatile memories; 2.1.1. The operating principle of a MOSFET (metal oxide semiconductor field effect transistor)"]
[{"$nulls":4},"2.1.2. Operating characteristics of DRAM memories 2.2. SRAM memories; 2.3. Non-volatile memories related to CMOS technology; 2.3.1. Operational characteristics of a floating gate MOSFET; 2.3.1.1. How to charge and discharge the floating gate?; 2.3.1.2. Physical problems related to the storage of electrical charges and their impact on the operation of a floating gate memory; 2.3.1.2.1. Charge retention; 2.3.1.2.2. Problems related to writing and electron injection; 2.3.1.3. Multilevel cells"]
[{"$nulls":4},"2.3.1.4. The quality of dielectrics: one of the reasons behind the limitation of floating gate memory performances 2.3.1.5. The \"Achille's heel\" of floating gate memories; 2.3.2. Flash memories; 2.3.2.1. NOR and NAND Flash memories; 2.3.2.2. General organization of NAND Flash memories; 2.3.2.3. Perspectives for Flash memories; 2.4. Non-volatile magnetic memories (hard disk drives - HDDs and MRAMs); "]
[{"$nulls":4},"2.4.1. The discovery of giant magneto resistance at the origin of the spread of hard disk drives; 2.4.1.1. GMR characteristics; 2.4.2. Spin valves; 2.4.3. Magnetic tunnel junctions"]
[{"$nulls":4},"2.4.4. Operational characteristics of a hard disk drive (HDD)2.4.5. Characteristics of a magnetic random access memory (MRAM); 2.5. Conclusion; 3: Evolution of SSD Toward FeRAM, FeFET, CTM and STT-RAM Memories; 3.1. Evolution of DRAMs toward ferroelectric FeRAMs; 3.1.1. Characteristics of a ferroelectric material; 3.1.2. Principle of an FeRAM memory; 3.1.3. Characteristics of an FeFET memory; 3.1.3.1. Retention characteristics; 3.1.3.2. Ferroelectric materials other than oxides?; 3.2. The evolution of Flash memories towards charge trap memories (CTM)"]
[{"$nulls":4},"3.3. The evolution of magnetic memories (MRAM) toward spin torque transfer memories (STT-RAM)3.3.1. Nanomagnetism and experimental implications; 3.3.2. Characteristics of spin torque transfer; 3.3.3. Recent evolution with use of perpendicular magneticanisotropic materials; 3.4. Conclusions; PART 2: The Emergence of New Concepts: The Inorganic NEMS, PCRAM, ReRAM and Organic Memories; 4: Volatile and Non-volatile Memories Based on NEMS; 4.1. Nanoelectromechanical switches with two electrodes; 4.1.1. NEMS with cantilevers; 4.1.1.1. Operation and memory effect of an NEMS with a cantilever"]
[{"$nulls":4},"4.1.1.2. Description of the elaboration technique"]
[null,null,null,"Sommario/riassunto","Written for scientists, researchers, and engineers, <i>Non-volatile Memories</i> describes the recent research and implementations in relation to the design of a new generation of non-volatile electronic memories. The objective is to replace existing memories (DRAM, SRAM, EEPROM, Flash, etc.) with a universal memory model likely to reach better performances than the current types of memory: extremely high commutation speeds, high implantation densities and retention time of information of about ten years."]