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[null,"1.","Record Nr.",null,"UNISALENTO991003916679707536"]
[null,null,"Autore",null,"Bettelheim, Anton"]
[null,null,"Titolo",null,"Beaumarchais : eine biographie / von Anton Bettelheim"]
[null,null,"Pubbl/distr/stampa",null,"Frankfur : Rütten & Loening, 1886"]
[null,null,"Descrizione fisica",null,"XI, 659 p. ; 22 cm"]
[null,null,"Disciplina",null,"928.4"]
[null,null,"Soggetti",null,"Beaumarchais, Pierre-Augustin : Caron de"]
[{"$nulls":4},"Beaumarchais, Pierre-Augustin : Caron de"]
[null,null,"Lingua di pubblicazione",null,"Tedesco"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,"2.","Record Nr.",null,"UNINA9911006724103321"]
[null,null,"Autore",null,"Riccio Michele"]
[null,null,"Titolo",null,"Formation of Solid-State Structures"]
[null,null,"Pubbl/distr/stampa",null,"Zurich : , : Trans Tech Publications, Limited, , 2024"]
[{"$nulls":4},"©2024"]
[null,null,"ISBN",null,"9783036416328"]
[{"$nulls":4},"3036416323"]
[null,null,"Edizione",null,"[1st ed.]"]
[null,null,"Descrizione fisica",null,"1 online resource (221 pages)"]
[null,null,"Collana",null,"Solid State Phenomena, , 1662-9779 ; ; Volume 359"]
[null,null,"Soggetti",null,"Semiconductors"]
[{"$nulls":4},"Solid state physics"]
[null,null,"Lingua di pubblicazione",null,"Inglese"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,null,"Nota di contenuto",null,"Intro -- Formation of Solid-State Structures -- Preface -- Table of Contents -- Free-Standing 3C-SiC P-Type Doping by Al Ion Implantation -- TEM Investigation on High Dose Al Implanted 4H-SiC Epitaxial Layer -- Evolution of the Substitutional Fraction on Post-Implantation Annealing in Al/4H-SiC Systems -- Low Resistivity Aluminum Doped Layers Formed Using High Dose High Temperature Implants and Laser Annealing -- Improving HfO2 Thick Films for SiC Power Devices by Si, Y and La Doping -- Dopant Activation Comparison in Phosphorus and Nitrogen Implanted 4H-Silicon Carbide -- Transient-Enhanced Diffusion of Implanted Aluminum in 4H-SiC -- Calibration of Aluminum Ion Implantation Monte-Carlo Model for TCAD Simulations in 4H-SiC -- Prediction of Contact Resistance of 4H-SiC by Machine Learning Using Optical Microscope Images after Laser Doping -- The Effect of Nitrogen Plasma Treatment Process on Ohmic Contact Formation to N-Type 4H-SiC -- Ni/4H-SiC Ohmic Contact Formation Using Multipulse Nanosecond Laser Annealing -- Lift-Off Process for Patterning of a Sputter-Deposited Thick Metal Stack for High Temperature Applications on 4H-SiC -- Plasma Treatment after NiSi-Based Ohmic Contact Formation on 4H-SiC to Enhance Adhesion of Subsequent Backside Metallization -- Effect of Substrate Heating on Low Contact-Resistance Formation by Excimer Laser Doping for 4H-SiC -- Nickel Ohmic Contacts Formed on 4H-SiC by UV Laser Annealing -- Electrical and Structural Properties of Ohmic Contacts of SiC Diodes Fabricated on Thin Wafers -- Empirical Model of Low-Ohmic Nickel-"]
[{"$nulls":4},"Based Contact Formation on N-Type 4H-SiC Depending on Thermal Budget -- Low-Ohmic Nickel Contacts on N-Type 4H-SiC by Surface Roughness Dependent Laser Annealing Energy Density Optimization -- Long Term Reliability and Deterioration Mechanisms of High-Temperature Metal Stacks on 4H-SiC."]
[{"$nulls":4},"Metal Contact Processing Experiments towards Realizing 500 °C Durable RF 4H-SiC BJTs -- Performance Improvement by Carbon-Dioxide Supercritical Fluid Treatment for 4H-SiC Vertical Double Diffusion MOSFETs -- Hydrogen Etching Process of 4H-SiC (0001) in Limited Regions -- Comparative Study of the Self-Aligned Channel Processes for 4H-SiC VDMOSFET -- Demonstration of Low Interface Trap Density (~3×1011eV-1cm-2) SiC/SiO2 MOS Capacitor with Excellent Performance Using H2+NO POA Treatment for SiC Power Devices -- Increasing Mobility in 4H-SiC MOSFETs with Deposited Oxide by In-Situ Nitridation of SiC Surface -- Demonstrating SiC In Situ Rounded Trench Processing Technologies for Future Power Trench MOSFET Applications -- High Mobility 4H-SiC P-MOSFET via Ultrathin ALD B2O3 Interlayer between SiC and SiO2 -- Quality Improvement of SiC Substrate Surface with Using Non-Abrasive CMP Slurry -- Addition of Transition Metal Ion CMP Slurry for Forming Ultra-Flat SiC Crystal -- Increasing 4H-SiC Trench Depth by Improving the Dry Etch Selectivity towards the Oxide Hard Mask -- A Comparison between Different Post Grinding Processes on 4H-SiC Wafers -- Influence of Active Area Etching Method on the Integrity of Gate Oxide on 4H-SiC -- High-K Gate Dielectric for High-Performance SiC Power MOSFET Technology with Low Interface Trap Density, Good Oxide Lifetime (ttddb≥ 104s), and High Thermal Stability (≥ 800 °C) -- Keyword Index -- Author Index."]
[null,null,null,"Sommario/riassunto","Special topic volume with invited peer-reviewed papers only."]