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[null,"1.","Record Nr.",null,"UNISA996390624703316"]
[null,null,"Autore",null,"Vincent Thomas <1634-1678.>"]
[null,null,"Titolo",null,"The foundation of God standeth sure, or, A defence of those fundamental and so generally believed doctrines [[electronic resource] ] : of the trinity of persons in the unity of the divine essence, of the satisfaction of Christ the second person of the real and glorious Trinity, the justification of the ungodly by the imputed righteousness of Christ : against the cavils of W.P. J. a Quaker in his pamphlet entituled The sandy foundation shaken &c. : wherein his and the Quakers hideous blasphemies, Socinian, and damnably-heretical opinions are discovered and refuted, W.P.'s ignorance, weakness, falshoods, absurd arguings, and folly is made manifest unto all ... / / by Thomas Vincent"]
[null,null,"Pubbl/distr/stampa",null,"London, : [s.n.], 1668"]
[null,null,"Descrizione fisica",null,"80 p"]
[null,null,"Soggetti",null,"Society of Friends"]
[null,null,"Lingua di pubblicazione",null,"Inglese"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,null,null,"Note generali","Imperfect: all after p. 6 lacking."]
[{"$nulls":4},"Reproduction of original in the British Library."]
[null,null,null,"Sommario/riassunto","eebo-0018"]
[null,"2.","Record Nr.",null,"UNISALENTO991004006969707536"]
[null,null,"Autore",null,"Guilelmus : Tyrensis <sec. 11.>"]
[null,null,"Titolo",null,"Chronique / Guillame de Tyr ; édition critique par R.B.C. Huygens ; identification des sources historiques et determination des dates par H. E. Mayer et G. Rosch"]
[null,null,"Pubbl/distr/stampa",null,"Turnholti : Typographi Brepols, 1986"]
[null,null,"ISBN",null,"2503036333 (v. 2)"]
[null,null,"Descrizione fisica",null,"2 v. (1170 p. compless.) ; 26 cm."]
[null,null,"Collana",null,"Corpus Christianorum. Continuatio Mediaevalis ; 63-63 A"]
[null,null,"Disciplina",null,"940.1"]
[null,null,"Lingua di pubblicazione",null,"Latino"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,null,null,"Note generali","Include indici."]
[{"$nulls":4},"Sulla pagina contro il front.: Willelmi Tyrensis Archiepiscopi Chronicon."]
[null,"3.","Record Nr.",null,"UNIORUON00383930"]
[null,null,"Titolo",null,"Annotirovannyi katalog arkhivnykh materialov po buriatskomu shamanizmu TSentra vostochnykh rukopiseĭ i ksilografov, Instituta mongolovedeniia, buddologii i tibetologii / avtor-sostavitelʹ Olʹga A. Shaglanova ; redaktor Iuki Konagaia"]
[null,null,"Pubbl/distr/stampa",null,"Osaka, : Muzeĭ Ėtnologii, 2009"]
[null,null,"ISBN",null,"978-49-01-90673-9"]
[null,null,"Descrizione fisica",null,"332 p. : ill. ; 26 cm."]
[null,null,"Classificazione",null,"AC VII"]
[null,null,"Soggetti",null,"SCIAMANESIMO - ASIA CENTRALE"]
[{"$nulls":4},"BURYAT - Shamanesimo - Documenti - Inventari"]
[null,null,"Lingua di pubblicazione",null,"Russo"]
[{"$nulls":4},"Inglese"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,"4.","Record Nr.",null,"UNINA9910830878003321"]
[null,null,"Autore",null,"Enz Christian"]
[null,null,"Titolo",null,"Charge-based MOS transistor modeling [[electronic resource] ] : the EKV model for low-power and RF IC design / / Christian C. Enz, Eric A. Vittoz"]
[null,null,"Pubbl/distr/stampa",null,"Chichester, England ; ; Hoboken, NJ, : John Wiley, c2006"]
[null,null,"ISBN",null,"1-280-64993-3"]
[{"$nulls":4},"9786610649938"]
[{"$nulls":4},"0-470-85546-0"]
[{"$nulls":4},"0-470-85545-2"]
[null,null,"Descrizione fisica",null,"1 online resource (329 p.)"]
[null,null,"Disciplina",null,"621.3815284"]
[null,null,"Soggetti",null,"Metal oxide semiconductors - Mathematical models"]
[{"$nulls":4},"Metal oxide semiconductor field-effect transistors - Mathematical models"]
[null,null,"Lingua di pubblicazione",null,"Inglese"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,null,null,"Note generali","Description based upon print version of record."]
[null,null,null,"Nota di bibliografia","Includes bibliographical references (p. [291]-298) and index."]
[null,null,"Nota di contenuto",null,"Charge-based MOS Transistor Modeling; Contents; Foreword; Preface; List of Symbols; 1 Introduction; 1.1 The Importance of Device Modeling for IC Design; 1.2 A Short History of the EKV MOS Transistor Model; 1.3 The Book Structure; Part I The Basic Long-Channel Intrinsic Charge-Based Model; 2 Definitions; 2.1 The N-channel Transistor Structure; 2.2 Definition of Charges, Current, Potential, and Electric Fields; 2.3 Transistor Symbol and P-Channel Transistor; 3 The Basic Charge Model; 3.1 Poisson's Equation and Gradual Channel Approximation; 3.2 Surface Potential as a Function of Gate Voltage"]
[{"$nulls":4},"3.3 Gate Capacitance3.4 Charge Sheet Approximation; 3.5 Density of Mobile Inverted Charge; 3.5.1 Mobile Charge as a Function of Gate Voltage and Surface Potential; 3.5.2 Mobile Charge as a Function of Channel Voltage and Surface Potential; 3.6 Charge-Potential Linearization; 3.6.1 Linearization of Qi (s); 3.6.2 Linearized Bulk Depletion Charge Qb; 3.6.3 Strong Inversion Approximation; 3.6.4 Evaluation of the Slope Factor; 3.6.5 Compact Model Parameters; 4 Static Drain Current; 4.1 Drain Current Expression; 4.2 Forward and Reverse Current Components; 4.3 Modes of Operation"]
[{"$nulls":4},"4.4 Model of Drain Current Based on Charge Linearization4.4.1 Expression Valid for All Levels of Inversion; 4.4.2 Compact Model "]
[{"$nulls":4},"Parameters; 4.4.3 Inversion Coefficient; 4.4.4 Approximation of the Drain Current in Strong Inversion; 4.4.5 Approximation of the Drain Current in Weak Inversion; 4.4.6 Alternative Continuous Models; 4.5 Fundamental Property: Validity and Application; 4.5.1 Generalization of Drain Current Expression; 4.5.2 Domain of Validity; 4.5.3 Causes of Degradation; 4.5.4 Concept of Pseudo-Resistor; 4.6 Channel Length Modulation; 4.6.1 Effective Channel Length"]
[{"$nulls":4},"4.6.2 Weak Inversion4.6.3 Strong Inversion; 4.6.4 Geometrical Effects; 5 The Small-Signal Model; 5.1 The Static Small-Signal Model; 5.1.1 Transconductances; 5.1.2 Residual Output Conductance in Saturation; 5.1.3 Equivalent Circuit; 5.1.4 The Normalized Transconductance to Drain Current Ratio; 5.2 A General NQS Small-Signal Model; 5.3 The QS Dynamic Small-Signal Model; 5.3.1 Intrinsic Capacitances; 5.3.2 Transcapacitances; 5.3.3 Complete QS Circuit; 5.3.4 Domains of Validity of the Different Models; 6 The Noise Model; 6.1 Noise Calculation Methods; 6.1.1 General Expression"]
[{"$nulls":4},"6.1.2 Long-Channel Simplification6.2 Low-Frequency Channel Thermal Noise; 6.2.1 Drain Current Thermal Noise PSD; 6.2.2 Thermal Noise Excess Factor Definitions; 6.2.3 Circuit Examples; 6.3 Flicker Noise; 6.3.1 Carrier Number Fluctuations (Mc Worther Model); 6.3.2 Mobility Fluctuations (Hooge Model); 6.3.3 Additional Contributions Due to the Source and Drain Access Resistances; 6.3.4 Total 1/f Noise at the Drain; 6.3.5 Scaling Properties; 6.4 Appendices; Appendix: The Nyquist and Bode Theorems; Appendix: General Noise Expression; 7 Temperature Effects and Matching; 7.1 Introduction"]
[{"$nulls":4},"7.2 Temperature Effects"]
[null,null,null,"Sommario/riassunto","Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor. High-performance analog circuit design requires a very detailed model of the transistor, describing accurately its static and dynamic behaviors, its noise and matching limitations and its temperature variations. The charge-based EKV (Enz"]