{"text_format":"2","workbook":"xls","n_sheets":1,"sheets":["report2"],"not_rendered":{"charts":0,"images":0,"macros":0,"external_links":1,"defined_names":4,"comments":0,"pivot_tables":0},"unopened":[],"bounds":{"document_bytes":16777216,"sheet_cells":100000,"run_cost":"one","rows_first":2000,"rows_last":500,"rows_between":2000,"halvings":0,"cell_chars":16384,"cell_head_chars":4096},"cells_cut":0,"cells_raw":0,"read":"whole","date_system":"1900","formulas":"cached_only"}

{"sheet":"report2","index":0,"n_rows":77,"n_cols":5,"rows_kept":77,"cut":false,"hidden":false,"merged":[[0,2,0,3],[0,4,0,5],[1,2,1,3],[1,4,1,5],[2,2,2,3],[2,4,2,5],[3,2,3,3],[4,2,4,3],[5,2,5,3],[6,2,6,3],[7,2,7,3],[11,2,11,3],[11,4,11,5],[12,2,12,3],[12,4,12,5],[13,2,13,3],[13,4,13,5],[14,2,14,3],[15,2,15,3],[16,2,16,3],[17,2,17,3],[18,2,18,3],[19,2,19,3],[20,2,20,3],[29,2,29,3],[30,2,30,3],[34,2,34,3],[37,2,37,3],[37,4,37,5],[38,2,38,3],[38,4,38,5],[39,2,39,3],[39,4,39,5],[40,2,40,3],[42,2,42,3],[48,2,48,3],[49,2,49,3],[50,2,50,3],[51,2,51,3],[52,2,52,3],[54,2,54,3],[63,2,63,3],[63,4,63,5],[64,2,64,3],[64,4,64,5],[65,2,65,3],[65,4,65,5],[66,2,66,3],[69,2,69,3],[70,2,70,3],[71,2,71,3],[72,2,72,3],[73,2,73,3]],"flags":["formulas_cached_only"]}
[null,"1.","Record Nr.",null,"UNISA996387139903316"]
[null,null,"Autore",null,"Boyle Robert <1627-1691.>"]
[null,null,"Titolo",null,"Experimental notes of the mechanical origine or production of fixtness [[electronic resource]]"]
[null,null,"Pubbl/distr/stampa",null,"London, : Printed by E. Flesher, for R. Davis Bookseller in Oxford., 1675"]
[null,null,"Descrizione fisica",null,"34 p"]
[null,null,"Soggetti",null,"Solids"]
[null,null,"Lingua di pubblicazione",null,"Inglese"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,null,null,"Note generali","Reproduction of original in Bristol Public Library (Bristol, England) (reel 650:5h) and Henry E. Huntington Library and Art Gallery (reel 836:20g and reel 2344:5)."]
[null,null,null,"Sommario/riassunto","eebo-0113"]
[null,"2.","Record Nr.",null,"UNINA9910254928703321"]
[null,null,"Autore",null,"Heesen Bernd"]
[null,null,"Titolo",null,"Effective Strategy Execution : Improving Performance with Business Intelligence / / by Bernd Heesen"]
[null,null,"Pubbl/distr/stampa",null,"Berlin, Heidelberg : , : Springer Berlin Heidelberg : , : Imprint : Springer, , 2016"]
[null,null,"ISBN",null,"3-662-47923-0"]
[null,null,"Edizione",null,"[2nd ed. 2016.]"]
[null,null,"Descrizione fisica",null,"1 online resource (249 p.)"]
[null,null,"Collana",null,"Management for Professionals, , 2192-8096"]
[null,null,"Disciplina",null,"658.472"]
[null,null,"Soggetti",null,"Operations research"]
[{"$nulls":4},"Decision making"]
[{"$nulls":4},"Management"]
[{"$nulls":4},"Information technology"]
[{"$nulls":4},"Business—Data processing"]
[{"$nulls":4},"Application software"]
[{"$nulls":4},"Operations Research/Decision Theory"]
[{"$nulls":4},"IT in Business"]
[{"$nulls":4},"Information Systems Applications (incl. Internet)"]
[null,null,"Lingua di pubblicazione",null,"Inglese"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,null,null,"Note generali","Description based upon print version of record."]
[null,null,null,"Nota di bibliografia","Includes bibliographical references and index."]
[null,null,"Nota di contenuto",null,"Management Challenges in Dynamic Business Environments -- The Strategic Alignment Process -- Preparation for Strategy Execution -- Strategy Execution -- Outlook -- Case Studies."]
[null,null,null,"Sommario/riassunto","This book demonstrates how an improved strategic management approach, leveraging established management concepts in conjunction with the innovative technology solutions offered by business intelligence, can lead to better performance. It presents the three main barriers to effective strategy execution and explains how they can be overcome. Creating a shared understanding of the strategy at all levels of the organization using a Value ScorecardTM and following the Strategic Alignment ProcessTM allow organizations to measure and monitor performance. Strategic Alignment Remote ControlTM is presented as the ultimate tool for managers to remain in control of their business. Seven case studies from different industries across the globe provide examples of how the organizational performance can be improved. They include companies like Daimler, Tetra-Pak, Würth, "]
[{"$nulls":4},"Germany's Federal Employment Agency, the city of Aix-Les-Bains, and Giesecke & Devrient. Additional examples from organizations like Disney, Marriott, Volkswagen, Avis, FedEx, and Harrahs help to demonstrate how applying the concepts introduced adds unique value. The second edition of this book has been updated and improved. Additionally it includes a separate section on decision-making under uncertainty and the results of a survey on the adoption of business intelligence."]
[null,"3.","Record Nr.",null,"UNINA9911020194103321"]
[null,null,"Autore",null,"Dhanaselvam P. Suveetha"]
[null,null,"Titolo",null,"Field Effect Transistors"]
[null,null,"Pubbl/distr/stampa",null,"Newark : , : John Wiley & Sons, Incorporated, , 2025"]
[{"$nulls":4},"©2025"]
[null,null,"ISBN",null,"9781394248506"]
[{"$nulls":4},"1394248504"]
[{"$nulls":4},"9781394248490"]
[{"$nulls":4},"1394248490"]
[{"$nulls":4},"9781394248483"]
[{"$nulls":4},"1394248482"]
[null,null,"Edizione",null,"[1st ed.]"]
[null,null,"Descrizione fisica",null,"1 online resource (529 pages)"]
[null,null,"Disciplina",null,"621.3815284"]
[null,null,"Lingua di pubblicazione",null,"Inglese"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,null,"Nota di contenuto",null,"Cover -- Series Page -- Title Page -- Copyright Page -- Contents -- Preface -- Chapter 1 Classical MOSFET Evolution: Foundations and Advantages -- 1.1 Introduction of Classical MOSFET -- 1.1.1 The Advantages of MOSFET -- 1.2 Dual-Gate MOSFET -- 1.2.1 Advantage -- 1.2.1.1 Scalability -- 1.2.1.2 Improvement of Gain -- 1.2.1.3 Low-Power Consumption -- 1.2.1.4 Better ION/IOFF -- 1.2.1.5 Higher Switching Speed -- 1.2.2 Application -- 1.2.2.1 RF Mixer -- 1.2.2.2 RF Amplifier -- 1.2.2.3 Controllable Gain -- 1.3 Gate-All-Around MOSFET -- 1.3.1 The Fabrication Procedure of GAA MOSFETs -- 1.3.2 Advantage of Gate-All-Around MOSFETs -- 1.3.2.1 Excellent Performance -- 1.3.2.2 The Ability to Shrink -- 1.3.2.3 Adjustable Nanosheet -- 1.3.2.4 Monitoring the Channel by Gate -- 1.4 ID-VG and ID-VG Characteristics of Conventional MOSFETs -- 1.4.1 Introduction to ID-VG Curves -- 1.4.2 Threshold Voltage and Saturation Region -- 1.4.2.1 Role of Threshold Voltage -- 1.4.2.2 Exploring the Saturation Region -- 1.5 Capacitance Characteristics of Conventional MOSFETs -- 1.5.1 The Role of Capacitance in MOSFET Behavior -- 1.5.2 CV Modeling of MOSFET Transistors -- 1.6 Frequency-Dependent Behavior -- 1.6.1 The Importance of Frequency-Dependent Analysis of MOSFET Transistors -- 1.6.2 Applications and Implications -- 1.6.2.1 RF Front-Ends -- 1.6.2.2 High-Speed Data Transmission -- 1.7 Conclusion -- "]
[{"$nulls":4},"References -- Chapter 2 Marvels of Modern Semiconductor Field-Effect Transistors -- 2.1 Introduction -- 2.2 Tunnel Field-Effect Transistor -- 2.2.1 Tunneling Junction -- 2.3 Junctionless Transistors -- 2.3.1 Physics and Properties -- 2.4 GAA-FETs the Origin of Nanowire FETs and Nanosheet FETs -- 2.5 Significance in Modern Electronics -- 2.6 Main Electrical Characteristics of GAA-FETs -- 2.7 GAA-FET Classification -- 2.8 Nanowire Field-Effect Transistors (NW-FETs)."]
[{"$nulls":4},"2.9 Nanosheet Field-Effect Transistors (NS-FETs) -- 2.10 Electrical Characteristics -- 2.11 Conclusion -- References -- Chapter 3 Introduction to Modern FET Technologies -- 3.1 Introduction -- 3.2 FinFETs (Fin Field-Effect Transistors) -- 3.2.1 The Evolution from Planar to FinFET -- 3.2.2 Unleashing the Power of FinFETs -- 3.2.3 Smaller Nodes, Greater Integration -- 3.2.4 Applications Across Industries -- 3.2.5 Challenges and Future Prospects -- 3.3 Unveiling Multi-Gate MOSFETs: A Symphony of Efficiency -- 3.3.1 Enter Multi-Gate MOSFETs -- 3.3.2 Three-Dimensional Mastery -- 3.3.3 Superior Switching Speeds -- 3.3.4 Power Efficiency on Point -- 3.3.5 Versatility Across Applications -- 3.3.6 The Future Landscape -- 3.4 Unveiling Nanoscale MOSFETs: The Miniaturization Marvel -- 3.4.1 Scaling Down to the Nanoscale -- 3.4.2 Quantum Tunneling and Beyond -- 3.4.3 FinFETs and Beyond -- 3.4.4 High-Performance Computing -- 3.4.5 Challenges and Innovations -- 3.4.6 The Future of Nanoscale MOSFETs -- 3.5 High-Electron Mobility Transistors (HEMTs): A Leap into the Future of FET Technology -- 3.5.1 The Essence of HEMTs -- 3.5.2 The Heterojunction Advantage -- 3.5.3 Applications Across Industries -- 3.5.4 Key Advantages of HEMTs -- 3.5.5 Future Prospects -- 3.6 Graphene Field-Effect Transistors (GFETs): Pioneering the Future of FET Technology -- 3.6.1 The Wonder of Graphene -- 3.6.2 The Structure of GFETs -- 3.6.3 Key Advantages of GFETs -- 3.6.4 Applications Across Industries -- 3.6.5 Challenges and Future Developments -- 3.7 Tunnel Field-Effect Transistors (TFETs): Navigating the Quantum Realm of Future Electronics -- 3.7.1 The Principle of Quantum Tunneling -- 3.7.2 How TFETs Work -- 3.7.3 Key Advantages of TFETs -- 3.7.4 Applications Across Industries -- 3.7.5 Challenges and Future Prospects."]
[{"$nulls":4},"3.8 Silicon Carbide (SiC) MOSFETs: Transforming Power Electronics for a Greener Future -- 3.8.1 The Power of Silicon Carbide -- 3.8.2 Advantages of SiC MOSFETs -- 3.8.3 Applications Across Industries -- 3.8.4 Challenges and Future Developments -- 3.9 Power MOSFETs: Empowering the Future of High-Efficiency Power Electronics -- 3.9.1 The Basics of Power MOSFETs -- 3.9.2 Key Features of Power MOSFETs -- 3.9.3 Applications Across Industries -- 3.9.4 Challenges and Future Developments -- 3.10 Gallium Nitride (GaN) High-Electron Mobility Transistors (HEMTs): Unleashing the Power of Wide Bandgap Semiconductors -- 3.10.1 The Wonders of Wide Bandgap -- 3.10.2 Key Features of GaN HEMTs -- 3.10.3 Applications Across Industries -- 3.10.4 Challenges and Future Prospects -- 3.11 Organic Field-Effect Transistors (OFETs): Bridging the Gap to Flexible and Sustainable Electronics -- 3.11.1 The Organic Advantage -- 3.11.2 Key Features of OFETs -- 3.11.3 Applications Across Industries -- 3.11.4 Challenges and Future Directions -- 3.12 Conclusion -- Bibliography -- Chapter 4 Scaling of Field-Effect Transistors -- 4.1 Introduction -- 4.2 Short-Channel Effect -- 4.3 FinFET Overview -- 4.3.1 History of Development -- 4.3.2 Difficulties and Challenges -- 4.4 GAAFET Overview -- 4.4.1 History of Development -- 4.4.2 Difficulties and Challenges -- 4.5 Conclusions -- References -- Chapter 5 Future Prospective Beyond CMOS Technology Design -- 5.1 Introduction -- 5.2 Spintronics -- 5.2.1 Applications -- 5.3 Carbon Nanotube Transistors -- 5.4 "]
[{"$nulls":4},"Memristor -- 5.4.1 Working Principle -- 5.5 Applications -- 5.6 Quantum Dots -- 5.6.1 Operation and Applications -- References -- Chapter 6 Nanowire Transistors -- 6.1 Introduction -- 6.2 Nanowire FETs -- 6.2.1 Device Design -- 6.3 Organic Nanowire Transistors -- 6.4 Conclusion -- References."]
[{"$nulls":4},"Chapter 7 Advancement of Nanotechnology and NP-Based Biosensors -- 7.1 Introduction -- 7.2 Metal Oxide-Based Biosensors -- 7.3 Zinc Oxide-Based Biosensor -- 7.3.1 0D Nanostructures (Zero-Dimensional) -- 7.3.2 1D Nanostructures (One-Dimensional) -- 7.3.3 2D Nanostructures (Two-Dimensional) -- 7.3.4 3D Nanostructures (Three-Dimensional) -- 7.4 AuNP-Based Biosensors -- 7.5 GR-Based Biosensors -- References -- Chapter 8 Technology Behind Junctionless Semiconductor Devices -- 8.1 Introduction -- 8.2 Operating Modes Based on the Structure of the Device -- 8.3 TCAD Simulations -- 8.4 Effect of Temperature -- 8.5 Results and Discussions -- 8.6 Conclusion -- References -- Chapter 9 Breaking Barriers: Junctionless Metal-Oxide-Semiconductor Transistors Reinventing Semiconductor Technology -- 9.1 Introduction -- 9.1.1 The Evolution of Semiconductor Technology -- 9.1.2 Fundamentals of MOS Transistors -- 9.1.2.1 Structure of a MOS Transistor -- 9.1.2.2 Operation of a MOS Transistor -- 9.1.3 Overview of Junctionless Metal-Oxide-Semiconductor Transistors -- 9.2 Junctionless MOS Transistors: Principles and Concepts -- 9.2.1 Structure of Junctionless Transistor -- 9.2.2 Junctionless Nanowire Transistor (JNT) -- 9.2.3 Bulk Planar Junctionless Transistor (BPJLT) -- 9.3 Fabrication Techniques for Junctionless Transistors -- 9.3.1 Characteristics of Junctionless Transistors -- 9.3.1.1 Gated Resistor Characteristics -- 9.3.1.2 Gated Resistor and Intrinsic Device Delay Time -- 9.3.1.3 Variation of a Doping Concentration in an n-Type Gated Resistor -- 9.3.1.4 Transfer Characteristics -- 9.3.2 Comparison of Junction and Junctionless Transistor -- 9.4 Real-World Implementations of Junctionless Transistors -- 9.4.1 Current Limitations and Obstacles -- 9.5 Conclusion -- 9.6 Applications -- References."]
[{"$nulls":4},"Chapter 10 Performance Estimation of Junctionless Tunnel Field-Effect Transistor (JL-TFET): Device Structure and Simulation Through TCAD -- 10.1 Introduction -- 10.1.1 Introduction to TFET -- 10.1.1.1 TFET Structure and Working -- 10.2 Junctionless TFETs -- 10.2.1 Motivation for Junctionless TFETs -- 10.2.2 Existing Structure of Junctionless TFET -- 10.3 Design Structure of Junctionless TFETs -- 10.3.1 Junctionless TFET Structure -- 10.4 Conclusion -- References -- Chapter 11 Science and Technology of Tunnel Field-Effect Transistors -- 11.1 Phenomenon of Quantum Tunneling -- 11.2 Tunneling Mathematics -- 11.2.1 Schrodinger's Equation -- 11.2.2 Tunneling Through Rectangular Potential Barrier -- 11.2.3 WKB Approximation Model -- 11.2.4 Local Band-to-Band Tunneling Models -- 11.2.4.1 Kane's Model -- 11.2.5 Non-Local Band-To-Band Tunneling Models -- 11.3 Tunnel Field-Effect Transistors (TFETs) -- 11.3.1 Limitations of MOSFET -- 11.3.2 Mechanism and Structure of TFET -- 11.3.3 Advantages and Limitations of TFET -- 11.3.4 Types of Tunneling -- 11.3.4.1 Point Tunneling -- 11.3.4.2 Line Tunneling -- 11.3.5 Methods of Enhancing Performance of TFETs -- 11.3.5.1 Doping Engineering -- 11.3.5.2 Geometry Engineering -- 11.3.5.3 Material and Band Engineering -- 11.3.5.4 Employing Techniques to Enhance TFET Performance -- 11.3.6 RF and Small Signal Analysis of TFETs -- 11.3.6.1 Small Signal Model of N-TFET in ON/OFF State -- 11.3.7 Applications of TFET Devices -- 11.4 Conclusion -- References -- Chapter 12 Circuits Designed for Energy-Harvesting Applications That Leverage TFETs to Achieve Extremely Low Power Consumption -- 12.1 Introduction -- 12.1.1 The Roadmap for "]
[{"$nulls":4},"Technology Scaling -- 12.1.2 New Approaches for Upcoming Technology Generations -- 12.2 Energy Harvesting in an Era Beyond Moore's Law."]
[{"$nulls":4},"12.3 Tunnel Field-Effect Transistors (TFETs) as a Vital Technology for Energy Harvesting."]
[null,"4.","Record Nr.",null,"UNINA9910591180703321"]
[null,null,"Autore",null,"Topsakal Ilyas"]
[null,null,"Titolo",null,"Contemporary Turkish - Russian Relations from Past to Future"]
[null,null,"Pubbl/distr/stampa",null,"Istanbul, Turkiye, : Istanbul University Press, 2021"]
[{"$nulls":4},"Istanbul, Turkiye : , : Istanbul University Press, , 2021"]
[{"$nulls":4},"©2021"]
[null,null,"Edizione",null,"[1st ed.]"]
[null,null,"Descrizione fisica",null,"1 online resource (264 pages)"]
[null,null,"Soggetti",null,"Regional & national history"]
[null,null,"Lingua di pubblicazione",null,"Inglese"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,null,null,"Sommario/riassunto","The historical experience of relations between Turkey and Russia has gone through different stages. The first attempts at diplomatic relations, which date back to the 15th century, have developed over time and have begun to determine the geopolitical balance of power in the region. At the same time, certain regions have gained importance in the context of Russia and Turkey relations (a context in which strategic interests have been an area of constant search for compromise solutions): Central Asia, the Balkan Peninsula, the Caucasus region and the Middle East. Along with this, the historical roots of Turkey lie in the Eurasian region among the Turkic peoples of Russia, and the confessional values of Orthodox culture originated in the Byzantine Empire. From this point of view, Russian-Turkish relations can be seen as are an intertwinement of a large number of sensitive issues and difficult compromise solutions.\nThe regional mutual influence of Russia and Turkey seems to be a long process that developed during the period of the Ottoman and Russian Empires. At the stage of the formation of the Moscow state, Ivan the Third understood the importance of the participation of Russian merchants in the markets of Istanbul and sent a letter to the Ottoman Sultan Bayezid the Second on August 31, 1492, asking for free movement and trade. Having received a positive answer, Ivan the Third decided to send his ambassador to the Ottoman court in 1495, and thus diplomatic relations between İstanbul and Moscow began.\nSubsequently, the strengthening of the Russian Empire and its active "]
[{"$nulls":4},"participation in European politics led to a direct clash between the Ottoman Empire and Russia. Until the conflict of interest during the first World War, Russia and Turkey experienced the difficulties of a large multinational poly-confessional state in different ways, overflowing with ideas of constitutional reforms and democratic transformations. Following the end of First World War, the collapse of the Ottoman Empire and the change of state formation, i.e. the republic, once again pushed Soviet government and Turkey into a dialogue and consolidation efforts in the region: the Turkish War of Independence under the leadership of Mustafa Kemal Ataturk and the straits questions, diplomatic friction with the West at the Lausanne Conference and the support of diplomats from Ankara by the Soviet delegation.\nThe 20th century largely predetermined the foreign policy orientation of the Republic of Turkey. In 1952, Turkey and Greece became members of the North Atlantic Treaty Organization at the NATO Summit in Lisbon. As a result of the confrontation between NATO and the Warsaw Pact, Turkey and Russia been forced to build relations through the prism of the foreign policy agendas for a long time. The end of the 20th century and especially the beginning of the 21st century brought Russia to the level of the state and it began to build its foreign policy strategy based on national interest. As a result of V. V. Putin’s speech at the Munich conference on February 10, 2007, he set the task of creating a “multipolar world” as an objective. At the same time, Turkey continued to be an active participant in European politics, counting on fully-fledged integration into the European Union, but did not receive a specific answer and was forced to postpone the decision. In this regard, Turkey at a certain point made an independent decision to refuse to participate in the process of European integration and to develop its independent foreign policy strategy in the region. The catalyst for this decision was an unsuccessful coup attempt on July 15, 2016. Regional and global challenges caused by the Syrian crisis and confrontation of the international coalition in the Middle East have posed new challenges to Russian-Turkish relations. The attempts to consolidate the opinions and visions of specialists in various spheres of relations between Russia and Turkey relations have led the authors to highlight these aspects in regional interactions of various countries."]