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[null,"1.","Record Nr.",null,"UNINA990007700090403321"]
[null,null,"Autore",null,"Martin, James <1933- >"]
[null,null,"Titolo",null,"The Computerized Society / Martin, James , Norman, Adrian R. D."]
[null,null,"Pubbl/distr/stampa",null,"London : Prentice-Hall, 1970"]
[null,null,"Descrizione fisica",null,"560 p. ; 24 cm"]
[null,null,"Disciplina",null,"346.01"]
[null,null,"Locazione",null,"DDCP"]
[null,null,"Collocazione",null,"19-E-129"]
[null,null,"Lingua di pubblicazione",null,"Italiano"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,"2.","Record Nr.",null,"UNISA990003124360203316"]
[null,null,"Autore",null,"CEZANNE, Paul"]
[null,null,"Titolo",null,"Paul Cezanne / testo di Meyer Schapiro"]
[null,null,"Pubbl/distr/stampa",null,"Milano : Garzanti, copyr. 1983"]
[null,null,"Descrizione fisica",null,"128 p. : ill. ; 34 cm"]
[null,null,"Collana",null,"I grandi pittori"]
[null,null,"Disciplina",null,"759.4"]
[null,null,"Soggetti",null,"Cezanne, Paul"]
[null,null,"Collocazione",null,"V F SCH 2"]
[null,null,"Lingua di pubblicazione",null,"Italiano"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,"3.","Record Nr.",null,"UNINA9910809279803321"]
[null,null,"Autore",null,"Zhytnytska Rimma"]
[null,null,"Titolo",null,"Design von GaN Transistoren für leistungselektronische Anwendungen  / / Rimma Zhytnytska"]
[null,null,"Pubbl/distr/stampa",null,"Göttingen : , : Cuvillier Verlag, , [2021]"]
[{"$nulls":4},"©2021"]
[null,null,"ISBN",null,"3-7369-6413-7"]
[null,null,"Edizione",null,"[1st ed.]"]
[null,null,"Descrizione fisica",null,"1 online resource (183 pages)"]
[null,null,"Collana",null,"Innovationen mit Mikrowellen und Licht. Forschungsberichte aus dem Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik ; ; 65"]
[null,null,"Disciplina",null,"548.5"]
[null,null,"Soggetti",null,"Epitaxy"]
[null,null,"Lingua di pubblicazione",null,"Tedesco"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,null,"Nota di contenuto",null,"Intro -- 1 Kapitel: Einführung -- 1.1 Motivation -- 1.2 Ziel und Aufbau der Arbeit -- 2 Kapitel: Grundlagen der AlGaN/GaN-HEMTs -- 2.1 Materialeigenschaften von GaN und AlGaN/GaN Heterostruktur -- 2.2 AlGaN/GaN HEMT: Aufbau, Funktion und typische Kennlinien -- 3 Kapitel: Designkonzept für LE-Transistoren -- 3.1 Grundlagen des Designs -- 3.2 Anforderungen an GaN-Transistoren für die Leistungselektronikanwendungen -- 3.3 Designkonzept der GaN-Transistoren für Leistungselektronikanwendungen -- 4 Kapitel: Prozessdetails und Messmethoden -- 4.1 Herstellung der Transistoren und Teststrukturen -- 4.2 Elektrische Charakterisierung -- 5 Kapitel: Design für hohe Spannung -- 5.1 AlGaN/GaN HEMT im gesperrten Zustand -- 5.2 Designoptimierung für hohe Durchbruchfestigkeit -- 5.3 Zusammenfassung des Kapitels 5 -- 6 Kapitel: Design für niedrigen Ron und hohe Stromtragfähigkeit -- 6.1 Thermische Effekte im AlGaN/GaN HEMT -- 6.2 Elektrisch-thermische Charakterisierung des Al- GaN/GaN HEMTs -- 6.3 Designstudie (ANSYS) -- 6.4 Zusammenfassung des Kapitels 6 -- 7 Kapitel: LE-Transistoren - Design und Charakterisierung -- 7.1 Optimiertes Transistordesign -- 7.2 Charakterisierung der LE-Transistoren -- 7.3 Zusammenfassung des Kapitels 7 -- 8 Kapitel: Zusammenfassung und Ausblick -- 8.1 Zusammenfassung und Fazit -- 8.2 Ausblick -- Quellenverweis -- Abbildungsverzeichnis -- Tabellenverzeichnis."]