{"text_format":"2","workbook":"xls","n_sheets":1,"sheets":["report2"],"not_rendered":{"charts":0,"images":0,"macros":0,"external_links":1,"defined_names":2,"comments":0,"pivot_tables":0},"unopened":[],"bounds":{"document_bytes":16777216,"sheet_cells":100000,"run_cost":"one","rows_first":2000,"rows_last":500,"rows_between":2000,"halvings":0,"cell_chars":16384,"cell_head_chars":4096},"cells_cut":0,"cells_raw":0,"read":"whole","date_system":"1900","formulas":"cached_only"}

{"sheet":"report2","index":0,"n_rows":33,"n_cols":5,"rows_kept":33,"cut":false,"hidden":false,"merged":[[0,2,0,3],[0,4,0,5],[1,2,1,3],[1,4,1,5],[2,2,2,3],[3,2,3,3],[4,2,4,3],[5,2,5,3],[6,2,6,3],[8,2,8,3],[9,2,9,3],[11,2,11,3],[11,4,11,5],[12,2,12,3],[12,4,12,5],[13,2,13,3],[13,4,13,5],[14,2,14,3],[15,2,15,3],[16,2,16,3],[17,2,17,3],[18,2,18,3],[19,2,19,3],[20,2,20,3],[27,2,27,3],[28,2,28,3],[30,2,30,3]],"flags":["formulas_cached_only"]}
[null,"1.","Record Nr.",null,"UNIPARTHENOPE000004674"]
[null,null,"Titolo",null,"Inequality, welfare and poverty: theory and measurement / edited by Yoram Amiel, John A. Bishop"]
[null,null,"Pubbl/distr/stampa",null,"Amsterdam : JAI (Elsevier Science)"]
[null,null,"ISBN",null,"0-7623-1014-6"]
[null,null,"Descrizione fisica",null,"XI, 377 p. : graf. e tab. ; 23 cm"]
[null,null,"Collana",null,"Research on economic inequality ; 9"]
[null,null,"Collocazione",null,"915/30 a"]
[{"$nulls":4},"915/30 b"]
[null,null,"Lingua di pubblicazione",null,"Inglese"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,"2.","Record Nr.",null,"UNINA9910886064403321"]
[null,null,"Autore",null,"Singh Sangeeta"]
[null,null,"Titolo",null,"Beyond Si-Based CMOS Devices : Materials to Architecture / / edited by Sangeeta Singh, Shashi Kant Sharma, Durgesh Nandan"]
[null,null,"Pubbl/distr/stampa",null,"Singapore : , : Springer Nature Singapore : , : Imprint : Springer, , 2024"]
[null,null,"ISBN",null,"981-9746-23-X"]
[null,null,"Edizione",null,"[1st ed. 2024.]"]
[null,null,"Descrizione fisica",null,"1 online resource (331 pages)"]
[null,null,"Collana",null,"Springer Tracts in Electrical and Electronics Engineering, , 2731-4219"]
[null,null,"Disciplina",null,"621.3815"]
[null,null,"Soggetti",null,"Electronic circuits"]
[{"$nulls":4},"Microprocessors"]
[{"$nulls":4},"Computer architecture"]
[{"$nulls":4},"Materials"]
[{"$nulls":4},"Electronic Circuits and Systems"]
[{"$nulls":4},"Processor Architectures"]
[{"$nulls":4},"Materials for Devices"]
[null,null,"Lingua di pubblicazione",null,"Inglese"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,null,"Nota di contenuto",null,"Beyond Si Based CMOS Devices: Needs, Opportunities and Challenges -- Nanowire Based Si CMOS Devices -- Carbon Nanotube FETS: An Alternative For Beyond Si Devices -- Graphene Based Devices for Beyond CMOS Applications -- Other Potential 2-D Materials for CMOS Applications -- Heterogenous Integration of 2D Materials with Silicon-Complementary Metal Oxide Semiconductor (Si-CMOS) Devices -- TFET: From Material to Device Perspective -- Negative Capacitance Field Effect Transistor (NCFET): Strong Beyond CMOS Device -- Nanoelectromechanical Switches: As a Steep switching Device -- The Device-Circuit Co-Design Perspective on Phase-Transition and Hybrid Phase-Transition (Hyper-) FETs, Phase-FETs, and MOSFET -- Feedback Field-Effect Transistors/ Zero Subthreshold Swing and Zero Impact Ionization FET -- Resistive-Gate Field-Effect Transistor: A Potential Steep-Slope Device -- Spin Field-Effect Transistor: For Steep Switching Behaviour."]
[null,null,null,"Sommario/riassunto","This book focuses on summarizing recent research trends for new beyond-CMOS and beyond-silicon devices, circuits, and architectures for computing. It reports the recent achievements in this field from leading research trends around the globe, specifically focusing on nanoscale beyond silicon materials and devices, functional "]
[{"$nulls":4},"nanomaterials, nanoscale devices, beyond-CMOS devices materials, and their opportunities and challenges. The book is devoted to the fast-evolving field of modern material science and nanoelectronics, particularly to the physics and technology of functional nanomaterials and devices."]