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[null,"1.","Record Nr.",null,"UNISA996499863903316"]
[null,null,"Autore",null,"Terakawa Shigemi"]
[null,null,"Titolo",null,"Structure and electronic properties of ultrathin in films on Si(111) / / Shigemi Terakawa"]
[null,null,"Pubbl/distr/stampa",null,"Singapore : , : Springer, , [2022]"]
[{"$nulls":4},"©2022"]
[null,null,"ISBN",null,"9789811968723"]
[{"$nulls":4},"9789811968716"]
[null,null,"Descrizione fisica",null,"1 online resource (83 pages)"]
[null,null,"Collana",null,"Springer theses"]
[null,null,"Disciplina",null,"621.38171"]
[null,null,"Soggetti",null,"Metallic films"]
[{"$nulls":4},"Semiconductor films"]
[null,null,"Lingua di pubblicazione",null,"Inglese"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,null,null,"Nota di bibliografia","Includes bibliographical references."]
[null,null,"Nota di contenuto",null,"Intro -- Supervisor's Foreword -- Abstract -- Acknowledgements -- Contents -- 1 Introduction -- 1.1 Ultrathin Metal Films -- 1.2 Thin Indium Films on Si(111) -- 1.3 In/Si(111) Surface Superstructures -- 1.4 Bonding Between Metal Layers and Substrates -- 1.5 Outline of the Thesis -- References -- 2 Experimental Methods -- 2.1 Low-Energy Electron Diffraction (LEED) -- 2.1.1 Kinematic Theory -- 2.1.2 Dynamical Theory -- 2.1.3 Apparatus -- 2.2 Scanning Tunneling Microscopy (STM) -- 2.2.1 Theory and Apparatus -- 2.3 Angle-Resolved Photoelectron Spectroscopy (ARPES) -- 2.3.1 Theory -- 2.3.2 Apparatus -- 2.4 Four-Point-Probe (4PP) Conductivity Measurements -- 2.4.1 Theory and Apparatus -- 2.5 Experiments -- 2.5.1 Chamber 1 (ARPES, LEED) -- 2.5.2 Chamber 2 (ARPES, LEED) -- 2.5.3 Chamber 3 (STM) -- 2.5.4 Chamber 4 (4PP Conductivity Measurements, LEED) -- 2.5.5 Chamber 5 (LEED) -- 2.5.6 Samples -- References -- 3 Structure and Electronic Properties of In Single-Layer Metal on Si(111) -- 3.1 Introduction -- 3.2 Preparation of the In/Si(111) left parenthesis StartRoot 7 EndRoot times StartRoot 3 EndRoot right parenthesis( sqrt7 timessqrt3 )-Hex and left parenthesis StartRoot 7 EndRoot times StartRoot 3 EndRoot right parenthesis( sqrt7 timessqrt3 )-Striped Phases -- 3.3 The Atomic Structure of the In/Si(111) ``left parenthesis StartRoot 7 EndRoot times StartRoot 3 EndRoot right parenthesis( sqrt7 timessqrt3 )''-Hex Phase -- 3.3.1 LEED and STM Observations -- 3.3.2 Structure Model -- 3.3.3 First-Principles Calculation -- 3.4 Electronic "]
[{"$nulls":4},"Structure and Phase Transition of the Indium Monolayer on Si(111) -- 3.4.1 Electronic Structure of the In/Si(111) Hex Phase -- 3.4.2 Phase Transition of the In/Si(111) Hex Phase -- 3.5 Summary -- References -- 4 Structure and Electronic Properties of Ultrathin (In, Mg) Films on Si(111) -- 4.1 Introduction."]
[{"$nulls":4},"4.2 Structure Change by Mg Deposition onto the In/Si(111) left parenthesis StartRoot 7 EndRoot times StartRoot 3 EndRoot right parenthesis( sqrt7 timessqrt3 )-Rect Phase -- 4.2.1 LEED and STM Observations -- 4.2.2 Structure Determination by First-Principles Calculation -- 4.3 The Electronic Structure of the (In, Mg)/Si(111) left parenthesis StartRoot 3 EndRoot times StartRoot 3 EndRoot right parenthesis( sqrt3 timessqrt3 ) Phase -- 4.3.1 ARPES Experiments -- 4.3.2 Band Calculation -- 4.4 Summary -- References -- 5 Conclusions -- Appendix  Curriculum Vitae."]
[null,"2.","Record Nr.",null,"UNIORUON00520499"]
[null,null,"Autore",null,"BOOCKMANN, Hartmut"]
[null,null,"Titolo",null,"La Germania : dall'antichità alla caduta del muro / Hartmut Boockmann ... [et al.]"]
[null,null,"Pubbl/distr/stampa",null,"Roma ; Bari, : Laterza, 1990"]
[null,null,"ISBN",null,"88-420-3665-X"]
[null,null,"Descrizione fisica",null,"426 p., [16] c. di tav. : ill. ; 22 cm"]
[null,null,"Disciplina",null,"943"]
[null,null,"Soggetti",null,"Germania - Storia"]
[null,null,"Lingua di pubblicazione",null,"Italiano"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]