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[null,"1.","Record Nr.",null,"UNIORUON00156413"]
[null,null,"Autore",null,"ARAI Hakuseki"]
[null,null,"Titolo",null,"Tokushi yoron / Arai Hakuseki ; Muraoka Tsunetsugu kotei"]
[null,null,"Pubbl/distr/stampa",null,"Tokyo, : Iwanami shoten, 1964"]
[null,null,"Descrizione fisica",null,"321 p. ; 15 cm"]
[null,null,"Classificazione",null,"GIA SERIE"]
[null,null,"Soggetti",null,"GIAPPONE - STORIA - SEC. IX-XVI"]
[null,null,"Lingua di pubblicazione",null,"Giapponese"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,"2.","Record Nr.",null,"UNINA9911006734003321"]
[null,null,"Autore",null,"Riccio Michele"]
[null,null,"Titolo",null,"Processing and Characteristics of Solid-State Structures"]
[null,null,"Pubbl/distr/stampa",null,"Zurich : , : Trans Tech Publications, Limited, , 2024"]
[{"$nulls":4},"©2024"]
[null,null,"ISBN",null,"9783036416465"]
[{"$nulls":4},"3036416463"]
[null,null,"Edizione",null,"[1st ed.]"]
[null,null,"Descrizione fisica",null,"1 online resource (143 pages)"]
[null,null,"Collana",null,"Solid State Phenomena, , 1662-9779 ; ; Volume 358"]
[null,null,"Soggetti",null,"Metal oxide semiconductors"]
[{"$nulls":4},"Silicon carbide"]
[null,null,"Lingua di pubblicazione",null,"Inglese"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,null,"Nota di contenuto",null,"Intro -- Processing and Characteristics of Solid-State Structures -- Preface -- Table of Contents -- Investigation of Potential Impact of Nitridation Process on Single Event Gate Rupture Tolerance in SiC MOS Capacitors -- Venus Surface Environmental Chamber Test of SiC JFET-R Multi-Chip Circuit Board -- Coupled Non-Destructive Methods, Kelvin Force Probe Microscopy and µ-Raman to Characterize Doping in 4H-SiC Power Devices -- Concept and Technology for Full Monolithic MOSFET and JBS Vertical Integration in Multi-Terminal 4H-SiC Power Converters -- Comparing 4H-SiC NPN Buffer Layers by Epitaxial Growth and Implantation for Neural Interface Isolation -- Modeling the Charging of Gate Oxide under High Electric Field -- Complementary Two Dimensional Carrier Profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy -- Temperature Dependence of 4H-SiC Gate Oxide Breakdown and C-V Properties from Room Temperature to 500 °C -- Detection of Very Fast Interface Traps at 4H-SiC/AlN and 4H-SiC/Al2O3 Interfaces -- A Voltage Adjustable Diode Integrated SiC Trench MOSFET with Barrier Control Gate -- Effects of High Gate Voltage Stress on Threshold Voltage Stability in Planar and Trench SiC Power MOSFETs -- Design of Al2O3/LaAlO3/SiO2 Gate Stack on Various Channel Planes for High-Performance 4H-SiC Trench Power MOSFETs -- Channel Density Design Guidelines for the Transient Characteristics of SiC Trench Gate MOSFETs -- Analysis of On-State and Short-Circuit Capability in 3D Trench SiC MOSFET Designs -- Revised Channel Mobility Model for "]
[{"$nulls":4},"Predictive TCAD Simulations of 4H-SiC MOSFETs -- Improvement of Reflectance Spectroscopy for Oxide Layers on 4H-SiC -- Doping and Temperature Dependence of Carrier Lifetime in 4H SiC Epitaxial Layers."]
[{"$nulls":4},"Fail-to-Open Short Circuit Failure Mode of SiC Power MOSFETs: 2-D Thermo-Mechanical Modeling -- Gate Resistance Integration in SiC MOSFETs: Performance Simulations under Different Implementation Methods -- Fast Estimation of the Lateral Fidelity of Ion Implantation in 4H-SiC through Calibration to JFET Transfer Characteristics in TCAD -- Keyword Index -- Author Index."]
[null,null,null,"Sommario/riassunto","Special topic volume with invited peer-reviewed papers only."]