{"text_format":"2","workbook":"xls","n_sheets":1,"sheets":["report2"],"not_rendered":{"charts":0,"images":0,"macros":0,"external_links":1,"defined_names":1,"comments":0,"pivot_tables":0},"unopened":[],"bounds":{"document_bytes":16777216,"sheet_cells":100000,"run_cost":"one","rows_first":2000,"rows_last":500,"rows_between":2000,"halvings":0,"cell_chars":16384,"cell_head_chars":4096},"cells_cut":0,"cells_raw":0,"read":"whole","date_system":"1900","formulas":"cached_only"}

{"sheet":"report2","index":0,"n_rows":21,"n_cols":5,"rows_kept":21,"cut":false,"hidden":false,"merged":[[0,2,0,3],[0,4,0,5],[1,2,1,3],[1,4,1,5],[2,2,2,3],[2,4,2,5],[3,2,3,3],[5,2,5,3],[11,2,11,3],[12,2,12,3],[13,2,13,3],[14,2,14,3],[15,2,15,3],[17,2,17,3],[18,2,18,3]],"flags":["formulas_cached_only"]}
[null,"1.","Record Nr.",null,"UNINA9911020036703321"]
[null,null,"Autore",null,"Raj Balwinder"]
[null,null,"Titolo",null,"FeFET Devices, Trends, Technology and Applications"]
[null,null,"Pubbl/distr/stampa",null,"Newark : , : John Wiley & Sons, Incorporated, , 2025"]
[{"$nulls":4},"©2025"]
[null,null,"ISBN",null,"9781394287307"]
[{"$nulls":4},"1394287305"]
[{"$nulls":4},"9781394287284"]
[{"$nulls":4},"1394287283"]
[{"$nulls":4},"9781394287291"]
[{"$nulls":4},"1394287291"]
[null,null,"Edizione",null,"[1st ed.]"]
[null,null,"Descrizione fisica",null,"1 online resource (353 pages)"]
[null,null,"Collana",null,"Semiconductor devices and their applications"]
[null,null,"Disciplina",null,"621.3815/284"]
[null,null,"Soggetti",null,"Field-effect transistors"]
[{"$nulls":4},"Ferroelectric devices"]
[null,null,"Lingua di pubblicazione",null,"Inglese"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,null,null,"Sommario/riassunto","FeFET Devices, Trends, Technology and Applications is essential for anyone seeking an in-depth understanding of the latest advancements in ferroelectric devices, as it offers comprehensive insights into research techniques, novel materials, and the historical context of semiconductor development. This book serves as an encyclopedia of knowledge for state-of-the-art research techniques for the miniaturization of ferroelectric devices. This volume explores characteristics, novel materials used, modifications in device structure, and advancements in model FET devices. Though many devices following Moore's Law and More-Moore are proposed, a complete history of existing and proposed semiconductor devices is now available here. This resource focuses on developments and research in emerging ferroelectric FET devices and their applications, providing unique coverage of topics covering recent advancements and novel concepts in the field of miniaturized ferroelectric devices."]