{"text_format":"2","workbook":"xls","n_sheets":1,"sheets":["report2"],"not_rendered":{"charts":0,"images":0,"macros":0,"external_links":1,"defined_names":1,"comments":0,"pivot_tables":0},"unopened":[],"bounds":{"document_bytes":16777216,"sheet_cells":100000,"run_cost":"one","rows_first":2000,"rows_last":500,"rows_between":2000,"halvings":0,"cell_chars":16384,"cell_head_chars":4096},"cells_cut":0,"cells_raw":0,"read":"whole","date_system":"1900","formulas":"cached_only"}

{"sheet":"report2","index":0,"n_rows":20,"n_cols":5,"rows_kept":20,"cut":false,"hidden":false,"merged":[[0,2,0,3],[0,4,0,5],[1,2,1,3],[1,4,1,5],[2,2,2,3],[2,4,2,5],[3,2,3,3],[5,2,5,3],[7,2,7,3],[8,2,8,3],[9,2,9,3],[10,2,10,3],[11,2,11,3],[13,2,13,3],[14,2,14,3],[16,2,16,3]],"flags":["formulas_cached_only"]}
[null,"1.","Record Nr.",null,"UNINA9911006710703321"]
[null,null,"Autore",null,"Riccio Michele"]
[null,null,"Titolo",null,"Solid-State Power Devices"]
[null,null,"Pubbl/distr/stampa",null,"Zurich : , : Trans Tech Publications, Limited, , 2024"]
[{"$nulls":4},"©2024"]
[null,null,"ISBN",null,"9783036416335"]
[{"$nulls":4},"3036416331"]
[null,null,"Edizione",null,"[1st ed.]"]
[null,null,"Descrizione fisica",null,"1 online resource (203 pages)"]
[null,null,"Collana",null,"Solid State Phenomena, , 1662-9779 ; ; Volume 360"]
[null,null,"Disciplina",null,"621.31242"]
[null,null,"Soggetti",null,"Silicon carbide"]
[{"$nulls":4},"Power electronics"]
[null,null,"Lingua di pubblicazione",null,"Inglese"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,null,"Nota di contenuto",null,"Intro -- Solid-State Power Devices: Circuitry and Characterizations -- Preface -- Table of Contents -- 3rd Quadrant Surge Current SOA of SiC MOSFETs with Different Voltage Class -- Investigation of the Trapping and Detrapping Behavior by the On-State Resistance at Low Off-State Drain Bias in Schottky p-GaN Gate HEMTs -- Junction-Controlled-Diode-Embedded SiC-MOSFET for Improving Third Quadrant and Turn-On Characteristics -- Effect Evaluation and Modeling of p-Type Contact and p-Well Sheet Resistance of SiC MOSFET with Respect to Switching Characteristics -- Ohmic Contact Resistance in SiC Diodes with Ti and NiSi P+ Contacts -- Influence of Material Properties on Ruggedness Evaluation of Package Architectures for SiC Power Devices -- 1.2 kV SiC MOSFET with Low Specific ON-Resistance and High Immunity to Parasitic Turn-On -- Analysis of Electrothermal Imbalance of Hard-Switched Parallel SiC MOSFETs through Infrared Thermography -- Non-Linear Gate Stack Effect on the Short Circuit Performance of a 1.2-kV SiC MOSFET -- A Geometry-Scalable Physically-Based SPICE Compact Model for SiC MPS Diodes Including the Snapback Mechanism -- SiC GAA MOSFET Concept for High Power Electronics Performance Evaluation through Advanced TCAD Simulations -- High-Speed and High-Temperature Switching Operations of a SiC Power MOSFET Using a SiC CMOS Gate Driver Installed inside a Power Module -- Normally-Off 1200V Silicon Carbide JFET Diode with Low VF -- On the TCAD Modeling of Non-Permanent Gate Current Increase during Short-Circuit Test in SiC MOSFETs -- Study of Parasitic Effects for Accurate Dynamic "]
[{"$nulls":4},"Characterization of SiC MOSFEFTs: Comparison between Experimental Measurements and Numerical Simulations -- Analytical Modelling of the Quasi-Static Operation of a Monolithically Integrated 4H-SiC Circuit Breaker Device."]
[{"$nulls":4},"Visualization of P+ JTE Embedded Rings Used for Peripheral Protection of High Voltage Schottky Diodes by the Optical Beam Induced Current (OBIC) Technique -- Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor -- Temperature-Dependent Evaluation of Commercial 1.2 kV, 40 mΩ 4H-SiC MOSFETs: A Comparative Study between Planar, One-Side Shielded Trench, and Double Trench Gate Structures -- Excellent Avalanche Capability in SiC Power Device with Positively Beveled Mesa Termination -- Frequency Investigation of SiC MOSFETs C-V Curves with Biased Drain -- Experimental Demonstration and Analysis of 3.3kV 4H-SiC Common-Drain Bidirectional Charge-Balanced Power MOSFETs -- Comparison of Si CMOS and SiC CMOS Operational Amplifiers -- Comparative Performance Evaluation of High-Voltage Bidirectional, Conventional and Superjunction Planar DMOSFETs in 4H-SiC -- Comparison of the Surge Current Capabilities of SBD-Embedded and Conventional SiC MOSFETs -- The First Optimisation of a 16 kV 4H-SiC N-Type IGCT -- Influence of Channel Length and Gate Oxide Thickness Variations in 3300 V 4H-SiC VDMOSFET -- Investigation of the Short-Circuit Withstand Time and On-Resistance Trade-Off of 1.2 kV 4H-SiC Power MOSFETs -- Power Cycling Performance of 3.3 kV SiC-MOSFETs and the Impact of the Thermo-Mechanical Stress on Humidity Induced Degradation -- Estimation of Electron Drift Mobility along the c-Axis in 4H-SiC by Using Vertical Schottky Barrier Diodes -- Keyword Index -- Author Index."]
[null,null,null,"Sommario/riassunto","Special topic volume with invited peer-reviewed papers only."]