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[null,"1.","Record Nr.",null,"UNINA9911006708903321"]
[null,null,"Autore",null,"Riccio Michele"]
[null,null,"Titolo",null,"Growing and Forming of Semiconductor Layers"]
[null,null,"Pubbl/distr/stampa",null,"Zurich : , : Trans Tech Publications, Limited, , 2024"]
[{"$nulls":4},"©2024"]
[null,null,"ISBN",null,"9783036416311"]
[{"$nulls":4},"3036416315"]
[null,null,"Edizione",null,"[1st ed.]"]
[null,null,"Descrizione fisica",null,"1 online resource (107 pages)"]
[null,null,"Collana",null,"Solid State Phenomena, , 1662-9779 ; ; Volume 362"]
[null,null,"Soggetti",null,"Silicon carbide"]
[{"$nulls":4},"Gallium nitride"]
[null,null,"Lingua di pubblicazione",null,"Inglese"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,null,"Nota di contenuto",null,"Intro -- Growing and Forming of Semiconductor Layers -- Preface -- Table of Contents -- Polarity Effect on the Heteroepitaxial Growth of BxC on 4H-SiC by CVD -- Vertical Current Transport in Monolayer MoS2 Heterojunctions with 4H-SiC Fabricated by Sulfurization of Ultra-Thin MoOx Films -- Estimation of Influence on Carbon Vacancy Regarding 4H-SiC Substrate Grown by HTCVD Method -- Resistivity as a Witness of Local Crystal Growth Conditions -- GaN Cap UV Spectroscopy Assessment in AlGaN/GaN HEMT -- SNDM Study of the MOS Interface State Densities on the 3C-SiC / 4H-SiC Stacked Structure -- Development of 200mm SiC Technology - Epitaxial Thickness Uniformity Observation on Different 8 Inch 4H-SiC Substrates -- 4H-SiC Crystal Growth Using Recycled SiC Powder Source -- High-Quality SiC Crystal Growth by Temperature Gradient Control at Initial Growth Stage -- The Role of Air-Pocket in Crucible Structure for High Quality SiC Crystal Growth -- Influence of the Size Distribution of the SiC Powder Source on the Shape of the Crystal Growth Interface during PVT Growth of 4H-SiC Boules -- Confirmation of the Growth Mechanism of the Buffer Layer in Epitaxial Graphene on SiC -- Suppressing the Memory Effect in Al Doped 3C-SiC Grown Using Chlorinated Chemistry -- Investigations into the Impact of Deposition or Growth Techniques on the Field Oxide TID Response for 4H-SiC Space Applications -- Characterization of Growth Sectors in Gallium Nitride Substrate Wafers -- Doping Efficiency and Long-Term Stability of Various SiC Epitaxial Reactors and Process Chemistries -- Keyword Index -- Author Index."]
[null,null,null,"Sommario/riassunto","Special topic volume with invited peer-reviewed papers only."]