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[null,"1.","Record Nr.",null,"UNINA9910966527603321"]
[null,null,"Titolo",null,"CMOS nanoelectronics : innovative devices, architectures, and applications / / edited by Nadine Collaert"]
[null,null,"Pubbl/distr/stampa",null,"Boca Raton, Fla., : Pan Standford Pub., 2012"]
[{"$nulls":4},"Singapore : , : Pan Stanford Pub., , 2013"]
[null,null,"ISBN",null,"1-04-022174-2"]
[{"$nulls":4},"0-429-11283-1"]
[{"$nulls":4},"981-4364-03-7"]
[null,null,"Edizione",null,"[1st ed.]"]
[null,null,"Descrizione fisica",null,"1 online resource (444 p.)"]
[null,null,"Disciplina",null,"621.3815"]
[null,null,"Soggetti",null,"Molecular electronics"]
[{"$nulls":4},"Nanotechnology"]
[null,null,"Lingua di pubblicazione",null,"Inglese"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,null,null,"Note generali","Description based upon print version of record."]
[null,null,null,"Nota di bibliografia","Includes bibliographical references."]
[null,null,"Nota di contenuto",null,"Front Cover; Contents; Preface; I. Integration of Multi-Gate Devices (FinFET); 1. Introduction to Multi-Gate Devices and Integration Challenges; 2. Dry Etching Patterning Requirements for Multi-Gate Devices; 3. High-k Dielectrics and Metal Gate Electrodes on SOI MuGFETs; 4. Doping, Contact and Strain Architectures for Highly Scaled FinFETs; II. Circuit-Related Aspects; 5. Variability and Its Implications for FinFET SRAM; 6. Specific Features of MuGFETs at High Temperatures over a Wide Frequency Range; 7. ESD Protection in FinFET Technology; III. Exploratory Devices and Characterization Tools"]
[{"$nulls":4},"8. The Junctionless Nanowire Transistor9. The Variational Principle: A Valuable Ally Assisting the Self-Consistent Solution of Poisson's Equation and Semi-Classical Transport Equations; 10. New Tools for the Direct Characterisation of FinFETS; 11. Dopant Metrology in Advanced FinFETs"]
[null,null,null,"Sommario/riassunto","This book covers one of the most important device architectures that have been widely researched to extend the transistor scaling: FinFET. Starting with theory, the book discusses the advantages and the integration challenges of this device architecture. It addresses in detail the topics such as high-density fin patterning, gate stack design, and source/drain engineering, which have been considered challenges for the integration of FinFETs. The book also addresses circuit-related aspects, including the impact of variability on SRAM design, ESD "]
[{"$nulls":4},"design, and high-T operation. It discusses a new d"]