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[null,"1.","Record Nr.",null,"UNINA9910965662203321"]
[null,null,"Titolo",null,"SiC materials and devices / / edited by Michael Shur, Sergey Rumyantsev, Michael Levinshtein"]
[null,null,"Pubbl/distr/stampa",null,"New Jersey ; ; London, : World Scientific, 2007"]
[null,null,"ISBN",null,"9786611121242"]
[{"$nulls":4},"9781281121240"]
[{"$nulls":4},"128112124X"]
[{"$nulls":4},"9789812706850"]
[{"$nulls":4},"9812706852"]
[null,null,"Edizione",null,"[1st ed.]"]
[null,null,"Descrizione fisica",null,"1 online resource (143 p.)"]
[null,null,"Collana",null,"Selected topics in electronics and systems ; ; 43"]
[{"$nulls":4},"SiC materials and devices ; ; 2"]
[null,null,"Disciplina",null,"621.38152"]
[null,null,"Soggetti",null,"Silicon carbide - Electric properties"]
[{"$nulls":4},"Semiconductors"]
[null,null,"Lingua di pubblicazione",null,"Inglese"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,null,null,"Note generali","Description based upon print version of record."]
[null,null,null,"Nota di bibliografia","Includes bibliographical references."]
[null,null,"Nota di contenuto",null,"Preface; CONTENTS; Growth of Sic Substrates A. Powell, J. Jenny, S. Muller, H. Mcd. Hobgood, V. Tsvetkov, R. Lenoard and C. Carter, Jr.; 1. Introduction; 2. Sic Bulk Growth; 3. Crystal Orientation; 4. Crystal Diameter Enlargement; 5. Substrate Defects; 6. Doping in SIC; 7. Sic Substrates for Microwave Devices; 8. Wafering and Polish; 9. Substrate Cost; 10. Conclusions; Acknowledgments; References; Deep Level Defects in Silicon Carbide A. A. Lebedev; 1. Introduction; 2. Parameters of Deep Centers in Sic; 3. Influence of Impurities on the Growth of Epitaxial Sic Layers"]
[{"$nulls":4},"4. Deep Centers and Recombination Processes in Sic5. Conclusion; Acknowledgements; References; Silicon Carbide Junction Field Effect Transistors D. Stephani and P. Friedrichs; 1. Introduction; 2. Lateral SiC-JFETs; 3. The Vertical JFET (VJFET); References; Sic BJTs T. P. Chow and A. K. Agarwal; 1. Introduction; 2, Figures of Merit; 3. Power Bipolar Transistors; 4. Commercialization Challenges; References"]
[null,null,null,"Sommario/riassunto","Silicon carbide is known to have been investigated since 1907 when Captain H J Round demonstrated yellow and blue emission by applying bias between a metal needle and an SiC crystal. The potential of using SiC in semiconductor electronics was already recognized half a century ago. Despite its well-known properties, it has taken a few decades to "]
[{"$nulls":4},"overcome the exceptional technological difficulties of getting silicon carbide material to reach device quality and travel the road from basic research to commercialization. This second of two volumes reviews four important additional areas: the growth"]