{"text_format":"2","workbook":"xls","n_sheets":1,"sheets":["report2"],"not_rendered":{"charts":0,"images":0,"macros":0,"external_links":1,"defined_names":1,"comments":0,"pivot_tables":0},"unopened":[],"bounds":{"document_bytes":16777216,"sheet_cells":100000,"run_cost":"one","rows_first":2000,"rows_last":500,"rows_between":2000,"halvings":0,"cell_chars":16384,"cell_head_chars":4096},"cells_cut":0,"cells_raw":0,"read":"whole","date_system":"1900","formulas":"cached_only"}

{"sheet":"report2","index":0,"n_rows":19,"n_cols":5,"rows_kept":19,"cut":false,"hidden":false,"merged":[[0,2,0,3],[0,4,0,5],[1,2,1,3],[1,4,1,5],[2,2,2,3],[2,4,2,5],[3,2,3,3],[4,2,4,3],[6,2,6,3],[7,2,7,3],[8,2,8,3],[9,2,9,3],[10,2,10,3],[12,2,12,3],[13,2,13,3],[17,2,17,3]],"flags":["formulas_cached_only"]}
[null,"1.","Record Nr.",null,"UNINA9910962985503321"]
[null,null,"Autore",null,"Suzuki Kunihiro"]
[null,null,"Titolo",null,"Ion implantation and activation . Volume 3 / / Kunihiro Suzuki"]
[null,null,"Pubbl/distr/stampa",null,"Sharjah : , : Bentham Science Publishers, , 2013"]
[null,null,"ISBN",null,"9781608057924"]
[{"$nulls":4},"1608057925"]
[null,null,"Edizione",null,"[1st ed.]"]
[null,null,"Descrizione fisica",null,"1 online resource (212 p.)"]
[null,null,"Collana",null,"Ion Implantation and Activation"]
[null,null,"Disciplina",null,"621.3815;621.38152"]
[null,null,"Soggetti",null,"Ion implantation"]
[{"$nulls":4},"Ion accelerators"]
[null,null,"Lingua di pubblicazione",null,"Inglese"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,null,null,"Note generali","Description based upon print version of record."]
[null,null,null,"Nota di bibliografia","Includes bibliographical references and index."]
[null,null,"Nota di contenuto",null,"Cover; Title; EUL; Contents; Preface; Acknowledgement; Chapter 01; Chapter 02; Chapter 03; Chapter 04; Chapter 05; Chapter 06; Chapter 07; Index"]
[null,null,null,"Sommario/riassunto","Ion Implantation and Activation presents the derivation process of related models in a comprehensive step by step manner starting from the fundamental processes and moving up into the more advanced theories.Chapters in the book explain, in depth, various topics such as Pearson functions, LSS theory, Monte Carlo simulations, Edgeworth Polynomials and much more. This book provides advanced engineering and physics students and researchers with complete and coherent coverage of modern semiconductor process modeling."]