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[null,"1.","Record Nr.",null,"UNINA9910495937603321"]
[null,null,"Autore",null,"Aliaga Lavrijsen Jessica"]
[null,null,"Titolo",null,"Environmental and ecological readings : Nature, human and posthuman Dimensions in Scottisch Literature & Arts (XVIII-XXIe) / / Philippe Laplace"]
[null,null,"Pubbl/distr/stampa",null,"Besançon, : Presses universitaires de Franche-Comté, 2020"]
[null,null,"ISBN",null,"2-84867-749-X"]
[null,null,"Descrizione fisica",null,"1 online resource (308 p.)"]
[null,null,"Collana",null,"Annales littéraires"]
[null,null,"Soggetti",null,"English literature - Scottish authors - History and criticism"]
[{"$nulls":4},"Scottish literature - History and criticism"]
[{"$nulls":4},"Nature in literature"]
[{"$nulls":4},"Landscapes in literature"]
[{"$nulls":4},"Scotland"]
[null,null,"Lingua di pubblicazione",null,"Inglese"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,null,null,"Sommario/riassunto","The global risks posed by our industrial and post-industrial societies have brought environmental issues to the forefront of reflections and preoccupations in the postmodern world. One critical – and crucial – outcome of this state of affairs is the realization that artistic and literary representations of Nature and the environment need to be studied ever more closely if we are to adequately understand our relationship with our habitat and the impact we have had, and continue to have, on our planet.  This volume features seventeen articles from French and international scholars covering a wide range of genres, from eighteenth-century travel writers to contemporary poets, playwrights and novelists. The essays consider Nature and the environment in their relationship to men and women and question how mankind is set to evolve in a contemporary world that is increasingly perceived as posthuman. They show how these concepts have affected Scottish authors and literature produced in Scotland.  Presented chronologically, the essays highlight how each of the authors featured may have influenced the ensuing literary tradition. While the first section focuses on eighteenth and nineteenth century Scottish poets, novelists, artists or travel-writers, the second turns its attention to twentieth and twenty-first century authors, with an emphasis on "]
[{"$nulls":4},"modern and postmodern considerations, including the future of the human species from a posthuman perspective.  The collection is particularly noteworthy for its showcasing of previously unpublished material and stands as a significant contribution to arts research in ecocriticism and in the Scottish artistic and literary fields."]
[null,"2.","Record Nr.",null,"UNINA9910830394203321"]
[null,null,"Autore",null,"Steigerwald Joseph M"]
[null,null,"Titolo",null,"Chemical mechanical planarization of microelectronic materials [[electronic resource] /] / Joseph M. Steigerwald, Shyam P. Murarka, Ronald J. Gutmann"]
[null,null,"Pubbl/distr/stampa",null,"Weinheim, : Wiley-VCH, 2004"]
[null,null,"ISBN",null,"1-281-84314-8"]
[{"$nulls":4},"9786611843144"]
[{"$nulls":4},"3-527-61774-4"]
[{"$nulls":4},"3-527-61775-2"]
[null,null,"Descrizione fisica",null,"1 online resource (339 p.)"]
[null,null,"Disciplina",null,"621.3815"]
[{"$nulls":4},"621.38152"]
[null,null,"Soggetti",null,"Microelectronics - Materials"]
[{"$nulls":4},"Grinding and polishing"]
[null,null,"Lingua di pubblicazione",null,"Inglese"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,null,null,"Note generali","Description based upon print version of record."]
[null,null,null,"Nota di bibliografia","Includes bibliographical references and index."]
[null,null,"Nota di contenuto",null,"Chemical Mechanical Planarization of Microelectronic Materials; CONTENTS; Preface; 1 Chemical Mechanical Planarization - An Introduction; 1.1 Introduction; 1.2 Applications; 1.3 The CMP Process; 1.4 CMP Tools; 1.5 Process Integration; 1.6 Conclusion and Book Outline; References; 2 Historical Motivations for CMP; 2.1 Advanced Metallization Schemes; 2.1.1 Interconnect Delay Impact on Performance; 2.1.2 Methods of Reducing Interconnect Delay; 2.1.3 Planarity Requirements for Multilevel Metallization; 2.2 Planarization Schemes; 2.2.1 Smoothing and Local Planarization; 2.2.2 Global Planarization"]
[{"$nulls":4},"2.3 CMP Planarization2.3.1 Advantages of CMP; 2.3.2 Disadvantages of CMP; 2.3.3 The Challenge of CMP; References; 3 CMP Variables and Manipulations; 3.1 Output Variables; 3.2 Input Variables; References; 4 Mechanical and Electrochemical Concepts for CMP; 4.1 Preston Equation; 4.2 Fluid Layer Interactions; 4.3 Boundary Layer Interactions; 4.3.1 Fluid Boundary Layer; 4.3.2 Double Layer; 4.3.3 Metal Surface Films; 4.3.4 Mechanical Abrasion; 4.4 Abrasion Modes; 4.4.1 Polishing vs. Grinding; 4.4.2 Hertzian Indentation vs. Fluid-Based Wear; 4.5 The Polishing Pad; 4.5.1 Pad Materials and Properties"]
[{"$nulls":4},"4.5.2 Pad Conditioning4.6 Electrochemical Phenomena; 4.6.1 "]
[{"$nulls":4},"Reduction-Oxidation Reactions; 4.6.2 Pourbaix Diagrams; 4.6.3 Mixed Potential Theory; 4.6.4 Example: Copper CMP in NH3-Based Slurries; 4.6.5 Example: Copper-Titanium Interaction; 4.7 Role of Chemistry in CMP; 4.8 Abrasives; References; 5 Oxide CMP Processes - Mechanisms and Models; 5.1 The Role of Chemistry in Oxide Polishing; 5.1.1 Glass Polishing Mechanisms; 5.1.2 The Role of Water in Oxide Polishing; 5.1.3 Chemical Interactions Between Abrasive and Oxide Surface; 5.2 Oxide CMP in Practice; 5.2.1 Polish Rate Results"]
[{"$nulls":4},"5.2.2 Planarization Results5.2.3 CMP in Manufacturing; 5.2.4 Yield Issues; 5.3 Summary; References; 6 Tungsten and CMP Processes; 6.1 Inlaid Metal Patterning; 6.1.1 RIE Etch Back; 6.1.2 Metal CMP; 6.2 Tungsten CMP; 6.2.1 Surface Passivation Model for Tungsten CMP; 6.2.2 Tungsten CMP Processes; 6.3 Summary; References; 7 Copper CMP; 7.1 Proposed Model for Copper CMP; 7.2 Surface Layer Formation - Planarization; 7.2.1 Formation of Native Surface Films; 7.2.2 Formation of Nonnative Cu-BTA Surface Film; 7.3 Material Dissolution; 7.3.1 Removal of Abraded Material"]
[{"$nulls":4},"7.3.2 Increasing Solubility with Complexing Agent7.3.3 Increasing Dissolution Rate with Oxidizing Agents; 7.3.4 Chemical Aspect of the Copper CMP Model; 7.4 Preston Equation; 7.4.1 Preston Coefficient; 7.4.2 Polish Rates; 7.4.3 Comparison of Kp Values; 7.5 Polish-Induced Stress; 7.6 Pattern Geometry Effects; 7.6.1 Dishing and Erosion in Cu/SiO2 System; 7.6.2 Optimization of Process to Minimize Dishing and Erosion; 7.6.3 Summary; References; 8 CMP of Other Materials and New CMP Applications; 8.1 The Front-End Applications in Silicon IC Fabrication"]
[{"$nulls":4},"8.1.1 Polysilicon CMP for Deep Trench Capacitor Fabrication"]
[null,null,null,"Sommario/riassunto","Chemical Mechanical Planarization (CMP) plays an important role in today's microelectronics industry. With its ability to achieve global planarization, its universality (material insensitivity), its applicability to multimaterial surfaces, and its relative cost-effectiveness, CMP is the ideal planarizing medium for the interlayered dielectrics and metal films used in silicon integrated circuit fabrication. But although the past decade has seen unprecedented research and development into CMP, there has been no single-source reference to this rapidly emerging technology-until now.Chemica"]