{"text_format":"2","workbook":"xls","n_sheets":1,"sheets":["report2"],"not_rendered":{"charts":0,"images":0,"macros":0,"external_links":1,"defined_names":1,"comments":0,"pivot_tables":0},"unopened":[],"bounds":{"document_bytes":16777216,"sheet_cells":100000,"run_cost":"one","rows_first":2000,"rows_last":500,"rows_between":2000,"halvings":0,"cell_chars":16384,"cell_head_chars":4096},"cells_cut":0,"cells_raw":0,"read":"whole","date_system":"1900","formulas":"cached_only"}

{"sheet":"report2","index":0,"n_rows":31,"n_cols":5,"rows_kept":31,"cut":false,"hidden":false,"merged":[[0,2,0,3],[0,4,0,5],[1,2,1,3],[1,4,1,5],[2,2,2,3],[2,4,2,5],[3,2,3,3],[5,2,5,3],[9,2,9,3],[10,2,10,3],[11,2,11,3],[12,2,12,3],[14,2,14,3],[18,2,18,3],[19,2,19,3],[23,2,23,3]],"flags":["formulas_cached_only"]}
[null,"1.","Record Nr.",null,"UNINA9910830043003321"]
[null,null,"Autore",null,"Ouisse Thierry"]
[null,null,"Titolo",null,"Electron transport in nanostructures and mesoscopic devices [[electronic resource] /] / Thierry Ouisse"]
[null,null,"Pubbl/distr/stampa",null,"London, : ISTE"]
[{"$nulls":4},"Hoboken, NJ, : Wiley, 2008"]
[null,null,"ISBN",null,"1-282-16520-8"]
[{"$nulls":4},"9786612165207"]
[{"$nulls":4},"0-470-61139-1"]
[{"$nulls":4},"0-470-39400-5"]
[null,null,"Descrizione fisica",null,"1 online resource (399 p.)"]
[null,null,"Collana",null,"ISTE ; ; v.52"]
[null,null,"Classificazione",null,"VE 9850"]
[null,null,"Disciplina",null,"530.4/1"]
[{"$nulls":4},"620.5"]
[null,null,"Soggetti",null,"Electron transport"]
[{"$nulls":4},"Nanostructured materials - Electric properties"]
[{"$nulls":4},"Nanostructures - Electric properties"]
[{"$nulls":4},"Mesoscopic phenomena (Physics)"]
[null,null,"Lingua di pubblicazione",null,"Inglese"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,null,null,"Note generali","Description based upon print version of record."]
[null,null,null,"Nota di bibliografia","Includes bibliographical references and index."]
[null,null,"Nota di contenuto",null,"Electron Transport in Nanostructures and Mesoscopic Devices; Table of Contents; Chapter 1. Introduction; 1.1. Introduction and preliminary warning; 1.2. Bibliography; Chapter 2. Some Useful Concepts and Reminders; 2.1. Quantum mechanics and the Schrödinger equation; 2.1.1. A more than brief introduction; 2.1.2. The postulates of quantum mechanics; 2.1.3. Essential properties of observables; 2.1.4. Momentum operator; 2.1.5. Stationary states; 2.1.6. Probability current; 2.1.7. Electrons in vacuum and group velocity; 2.2. Energy band structure in a periodic lattice"]
[{"$nulls":4},"2.3. Semi-classical approximation2.4. Electrons and holes; 2.5. Semiconductor heterostructure; 2.6. Quantum well; 2.6.1. 1D case; 2.6.2. Coupled quantum wells; 2.6.3. Quantum-confined Stark effect; 2.7. Tight-binding approximation; 2.8. Effective mass approximation; 2.8.1. Wannier functions; 2.8.2. Effective mass Schrödinger equation; 2.9. How good is the effective mass approximation in a confined structure?; 2.10. Density of states; 2.10.1. 3D case; 2.10.2. 2D case; 2.10.3. 1D case; 2.10.4. Summary; 2.11. Fermi-Dirac statistics; 2.12. "]
[{"$nulls":4},"Examples of 2D systems"]
[{"$nulls":4},"2.13. Characteristic lengths and mesoscopic nature of electron transport2.14. Mobility: Drude model; 2.15. Conduction in degenerate materials; 2.16. Einstein relationship; 2.17. Low magnetic field transport; 2.18. High magnetic field transport; 2.18.1. Introduction; 2.18.2. Some reminders about the particle Hamiltonian in the presence of an electromagnetic field; 2.18.3. Action of a magnetic field (classical); 2.18.4. High magnetic field transport; 2.19. Exercises; 2.19.1. Exercise; 2.19.2. Exercise; 2.19.3. Exercise; 2.19.4. Exercise; 2.20. Bibliography"]
[{"$nulls":4},"Chapter 3. Ballistic Transport and Transmission Conductance3.1. Conductance of a ballistic conductor; 3.2. Connection between 2D and 1D systems; 3.3. A classical analogy; 3.4. Transmission conductance: Landauer's formula; 3.5. What if the device length really does go down to zero?; 3.6. A smart experiment which shows you everything; 3.7. Relationship between the Landauer formula and Ohm's law; 3.8. Dissipation with a scatterer; 3.9. Voltage probe measurements; 3.10. Comment about the assumption that T is constant; 3.11. Generalization of Landauer's formula: Büttiker's formula"]
[{"$nulls":4},"3.11.1. Büttiker's formula3.11.2. Three-terminal device; 3.11.3. Four-terminal device; 3.12. Non-zero temperature; 3.12.1. Large applied bias μ1-μ2>>0; 3.12.2. Incoherent states; 3.12.3. Coherent states; 3.12.4. Physical parameters included in the transmission probability; 3.12.5. Linear response (μ1-μ2<kBT or T(E)=Cst); 3.13. The integer quantum Hall effect; 3.13.1. The experiment; 3.13.2. The explanation; 3.14. Exercises; 3.14.1. Exercise; 3.14.2. Exercise; 3.14.3. Exercise; 3.14.4. Exercise; 3.14.5. Exercise; 3.15. Bibliography; Chapter 4. S-matrix Formalism"]
[{"$nulls":4},"4.1. Scattering matrix or S-matrix"]
[null,null,null,"Sommario/riassunto","This book introduces researchers and students to the physical principles which govern the operation of solid-state devices whose overall length is smaller than the electron mean free path. In quantum systems such as these, electron wave behavior prevails, and transport properties must be assessed by calculating transmission amplitudes rather than microscopic conductivity. Emphasis is placed on detailing the physical laws that apply under these circumstances, and on giving a clear account of the most important phenomena. The coverage is comprehensive, with mathematics and theoretical material s"]