{"text_format":"2","workbook":"xls","n_sheets":1,"sheets":["report2"],"not_rendered":{"charts":0,"images":0,"macros":0,"external_links":1,"defined_names":3,"comments":0,"pivot_tables":0},"unopened":[],"bounds":{"document_bytes":16777216,"sheet_cells":100000,"run_cost":"one","rows_first":2000,"rows_last":500,"rows_between":2000,"halvings":0,"cell_chars":16384,"cell_head_chars":4096},"cells_cut":0,"cells_raw":0,"read":"whole","date_system":"1900","formulas":"cached_only"}

{"sheet":"report2","index":0,"n_rows":59,"n_cols":5,"rows_kept":59,"cut":false,"hidden":false,"merged":[[0,2,0,3],[0,4,0,5],[1,2,1,3],[1,4,1,5],[2,2,2,3],[2,4,2,5],[3,2,3,3],[4,2,4,3],[5,2,5,3],[6,2,6,3],[7,2,7,3],[8,2,8,3],[9,2,9,3],[11,2,11,3],[12,2,12,3],[12,4,12,5],[13,2,13,3],[13,4,13,5],[14,2,14,3],[14,4,14,5],[15,2,15,3],[16,2,16,3],[17,2,17,3],[18,2,18,3],[19,2,19,3],[21,2,21,3],[24,2,24,3],[31,2,31,3],[32,2,32,3],[34,2,34,3],[34,4,34,5],[35,2,35,3],[35,4,35,5],[36,2,36,3],[37,2,37,3],[41,2,41,3],[42,2,42,3],[43,2,43,3],[46,2,46,3],[47,2,47,3],[51,2,51,3]],"flags":["formulas_cached_only"]}
[null,"1.","Record Nr.",null,"UNISA990002168380203316"]
[null,null,"Autore",null,"FROMONT, Michel"]
[null,null,"Titolo",null,"Introduction au droit allemand : République Fédérale / par Michel Fromont, Alfred Rieg"]
[null,null,"Pubbl/distr/stampa",null,"Paris : Cujas, 1977-"]
[null,null,"Descrizione fisica",null,"v. ; 24 cm"]
[null,null,"Collana",null,"Les systèmes de droit contemporains"]
[null,null,"Disciplina",null,"340"]
[null,null,"Collocazione",null,"XXV.1.M 93.1 (IG XXI 85)"]
[null,null,"Lingua di pubblicazione",null,"Francese"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,null,"Nota di contenuto",null,"<1.>: Les fondements. - 1977. - 252 p"]
[null,"2.","Record Nr.",null,"UNINA990006938610403321"]
[null,null,"Autore",null,"Degrassi, Attilio <1887-1969>"]
[null,null,"Titolo",null,"Fasti capitolini / recensuit, praefatus est, indicibus instruxit Atilius Degrassi"]
[null,null,"Pubbl/distr/stampa",null,"Aug. Taurinorum [etc.], : In aedibus Io. Bapt. Paraviae et sociorum, 1954"]
[null,null,"Titolo uniforme",null,"Fasti consulares Capitolini"]
[null,null,"Descrizione fisica",null,"189 p. ; 24 cm"]
[null,null,"Collana",null,"Corpus scriptorum Latinorum Paravianum"]
[null,null,"Disciplina",null,"340.54"]
[{"$nulls":4},"878"]
[null,null,"Locazione",null,"FGBC"]
[{"$nulls":4},"FLFBC"]
[{"$nulls":4},"NAP03"]
[null,null,"Collocazione",null,"FONDO PROFESSOR ANTONIO GUARINO IV Z 117"]
[{"$nulls":4},"IV Z ES 14"]
[{"$nulls":4},"IV Z 28"]
[{"$nulls":4},"P2B-640-CSLP-FAST.CAP.-200A-1954"]
[{"$nulls":4},"P2B-640-CSLP-FAST.CAP.-200Abis-1954"]
[{"$nulls":4},"P2B-640-CSLP-FAST.CAP.-200Ater-1954"]
[{"$nulls":4},"P2B-640-CSLP-FAST.CAP.-200Aquater-1954"]
[null,null,"Lingua di pubblicazione",null,"Latino"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,"3.","Record Nr.",null,"UNINA9910829932703321"]
[null,null,"Titolo",null,"Crystal growth technology [[electronic resource] ] : semiconductors and dielectrics / / edited by Peter Capper, Peter Rudolph"]
[null,null,"Pubbl/distr/stampa",null,"Weinheim, : Wiley-VCH, c2010"]
[null,null,"ISBN",null,"3-527-63289-1"]
[{"$nulls":4},"1-283-86975-6"]
[{"$nulls":4},"3-527-63288-3"]
[{"$nulls":4},"3-527-63287-5"]
[null,null,"Descrizione fisica",null,"1 online resource (368 p.)"]
[null,null,"Disciplina",null,"660.284298"]
[null,null,"Soggetti",null,"Crystal growth"]
[{"$nulls":4},"Dielectrics"]
[{"$nulls":4},"Semiconductors - Materials"]
[null,null,"Lingua di pubblicazione",null,"Inglese"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,null,null,"Note generali","Description based upon print version of record."]
[null,null,null,"Nota di bibliografia","Includes bibliographical references and index."]
[null,null,"Nota di contenuto",null,"Crystal Growth Technology: Semiconductors and Dielectrics; Foreword; Contents; Preface; List of Contributors; Part I: Basic Concepts in Crystal Growth Technology; 1: Thermodynamic Modeling of Crystal-Growth Processes; 1.1 Introduction; 1.2 General Approach of Thermodynamic Modeling; 1.2.1 Basics; 1.2.1.1 State Variables for the Description of Equilibrium Conditions; 1.2.1.2 The ChemSage Software Package; 1.3 Crystal Growth in the System Si-C-O-Ar (Example 1); 1.3.1 Selection of Species; 1.3.2 Test Calculation, Check of Consistency; 1.3.3 Calculation of Gibbs Free Energy for Selected Reactions"]
[{"$nulls":4},"1.3.4 Minimization of Gibbs Free Energy of Complex Systems1.3.5 The Thermodynamic-Technological Model of the Edge-Defined Film-Fed Growth of Silicon; 1.4 Crystal Growth of Carbon-Doped GaAs (Example 2); 1.4.1 Components and Species in the System; 1.4.2 Results; 1.4.3 Extended Model; 1.5 Summary and Conclusions; Acknowledgments; References; 2: Modeling of Vapor-Phase Growth of SiC and AlN Bulk Crystals; 2.1 Introduction; 2.2 Model Description; 2.2.1 Quasi-Thermodynamic Model of AlN and AlGaN HVPE; 2.2.2 Modeling of Gas-Phase Nucleation in SiC CVD and HTCVD; 2.3 Results and Discussions"]
[{"$nulls":4},"2.3.1 GaN, AlN, and AlGaN HVPE2.3.2 SiC HTCVD; 2.4 Conclusions; References; 3: Advanced Technologies of Crystal Growth from Melt Using Vibrational Influence; 3.1 Introduction; 3.2 Axial Vibrational "]
[{"$nulls":4},"Control in Crystal Growth; 3.3 AVC-Assisted Czochralski Method; 3.4 AVC-Assisted Bridgman Method; 3.5 AVC-Assisted Floating Zone Method; 3.6 Conclusions; Acknowledgments; References; Part II: Semiconductors; 4: Numerical Analysis of Selected Processes in Directional Solidification of Silicon for Photovoltaics; 4.1 Introduction; 4.2 Directional Solidification Method; 4.3 Crystallization Process"]
[{"$nulls":4},"4.4 Impurity Incorporation in Crystals4.5 Summary; Acknowledgment; References; 5: Characterization and Control of Defects in VCz GaAs Crystals Grown without B2O3 Encapsulant; 5.1 Introduction; 5.2 Retrospection; 5.3 Crystal Growth without B2O3 Encapsulant; 5.4 Inclusions, Precipitates and Dislocations; 5.5 Residual Impurities and Special Defect Studies; 5.6 Electrical and Optical Properties in SI GaAs; 5.7 Boron in SC GaAs; 5.8 Outlook on TMF-VCz; 5.9 Conclusions; Acknowledgments; References; 6: The Growth of Semiconductor Crystals (Ge, GaAs) by the Combined Heater Magnet Technology"]
[{"$nulls":4},"6.1 Introduction6.2 Selected Fundamentals; 6.2.1 Convection-Driven Forces; 6.2.2 The Features of Traveling Magnetic Fields; 6.3 TMF Generation in Heater-Magnet Modules; 6.4 The HMM Design; 6.5 Numerical Modeling; 6.6 Dummy Measurements; 6.7 Growth Results under TMF; 6.7.1 LEC of GaAs; 6.7.2 VGF of Ge; 6.8 Conclusions and Outlook; Acknowledgment; References; 7: Manufacturing of Bulk AlN Substrates; 7.1 Introduction; 7.1.1 Substrates for Group III Nitride Devices; 7.1.2 Growth of Bulk Group III Nitride Crystals; 7.1.3 Sublimation Growth of AlN Crystals; 7.2 Modeling; 7.3 Experiment"]
[{"$nulls":4},"7.3.1 Pregrowth Processing"]
[null,null,null,"Sommario/riassunto","Semiconductors and dielectrics are two essential materials found in cell phones and computers, for example, and both are manufactured by growing crystals.Edited by the organizers of the International Workshop on Crystal Growth Technology, this ready reference is essential reading for materials scientists, chemists, physicists, computer hardware manufacturers, engineers, and those working in the chemical and semiconductor industries. They have assembled an international team of experts who present the current challenges, latest methods and new applications for producing these materials nece"]