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[null,"1.","Record Nr.",null,"UNINA990000083950403321"]
[null,null,"Autore",null,"Stephan, P."]
[null,null,"Titolo",null,"Die Drahtseilbahnen (schwebebahnen) : Einschliesslich der Kabelkrane und Elektrohñgebahnen / P. Stephan"]
[null,null,"Pubbl/distr/stampa",null,"Berlin : J. Springer, 1926"]
[null,null,"Edizione",null,"[4. verbesserte auf.]"]
[null,null,"Descrizione fisica",null,"XII, 572 p., 1 tav. : ill. ; 24 cm"]
[null,null,"Disciplina",null,"625.5"]
[null,null,"Locazione",null,"FINAG"]
[{"$nulls":4},"DINTR"]
[null,null,"Collocazione",null,"23 18 B 03"]
[{"$nulls":4},"H1/7"]
[null,null,"Lingua di pubblicazione",null,"Tedesco"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,"2.","Record Nr.",null,"UNINA9910807658503321"]
[null,null,"Titolo",null,"Lithography : main techniques / / edited by Stefan Landis"]
[null,null,"Pubbl/distr/stampa",null,"London, : ISTE"]
[{"$nulls":4},"Hoboken, N.J., : Wiley, 2011"]
[null,null,"ISBN",null,"1-118-55766-2"]
[{"$nulls":4},"1-299-31552-6"]
[{"$nulls":4},"1-118-62123-9"]
[null,null,"Edizione",null,"[1st ed.]"]
[null,null,"Descrizione fisica",null,"1 online resource (405 p.)"]
[null,null,"Collana",null,"ISTE"]
[null,null,"Classificazione",null,"TEC021000"]
[null,null,"Disciplina",null,"621.3815/31"]
[null,null,"Soggetti",null,"Microlithography"]
[null,null,"Lingua di pubblicazione",null,"Inglese"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,null,null,"Note generali","Adapted and updated from Lithography published 2010 in France by Hermes Science/Lavoisier."]
[null,null,null,"Nota di bibliografia","Includes bibliographical references and index."]
[null,null,"Nota di contenuto",null,"Cover; Title Page; Copyright Page; Table of Contents; Foreword; Introduction; Chapter 1. Photolithography; 1.1. Introduction; 1.2. Principles and technology of scanners; 1.2.1. Illumination; 1.2.2. The mask or reticle; 1.2.3. Projection optics; 1.2.4. Repeated projection and scanning projection; 1.3. Lithography processes; 1.3.1. Anti-reflective coating; 1.3.2. Resists; 1.3.3. Barrier layers or \"\"top coating\"\"; 1.4. Immersion photolithography; 1.4.1. Immersion lithography; 1.4.2. Resolution improvement; 1.4.3. Relevance of immersion lithography; 1.4.4. Immersion liquids"]
[{"$nulls":4},"1.4.5. Immersion scanners1.4.6. Immersion specific constraints and issues; 1.5. Image formation; 1.6. Lithography performances enhancement techniques; 1.6.1. Off axis illumination (OAI); 1.6.2. Optical proximity corrections (OPC); 1.6.3. Phase shift masks (PSM); 1.7. Contrast; 1.7.1. Polarized light contrast; 1.7.2. Influence of contrast on roughness; 1.8. Bibliography; Chapter 2. Extreme Ultraviolet Lithography; 2.1. Introduction to extreme ultraviolet lithography; 2.1.1. Chapter introduction"]
[{"$nulls":4},"2.1.2. Extreme ultraviolet lithography: the successor of optical lithography at 248 nm and 193 nm wavelengths2.1.3. The spectral range of extreme ultraviolet; 2.1.4. Choice of wavelength and resolution limit for EUV lithography; 2.2. The electromagnetic properties of materials and the complex index; 2.2.1. Wave vector and complex index; 2.2.2. Scattering and absorption: the electromagnetic "]
[{"$nulls":4},"origin of the refractive index; 2.2.3. Light propagation and refractive index; 2.2.4. Reflection and transmission of a monochromatic wave; 2.3. Reflective optical elements for EUV lithography"]
[{"$nulls":4},"2.3.1. The interferential mirror principle: Bragg structure2.3.2. Reflective optics: conception and fabrication; 2.3.3. Projection optics for EUV lithography; 2.4. Reflective masks for EUV lithography; 2.4.1. Different mask types; 2.4.2. Manufacturing processes for EUV masks; 2.4.3. Mask defectivity; 2.5. Modeling and simulation for EUV lithography; 2.5.1. Simulation, a conceptional tool; 2.5.2. Simulation methods; 2.6. EUV lithography sources; 2.6.1. Constitutive elements of a plasma source; 2.6.2. Specifications for an EUV source; 2.6.3. EUV sources; 2.7. Conclusion"]
[{"$nulls":4},"2.8. Appendix: Kramers-Krönig relationship2.9. Bibliography; Chapter 3. Electron Beam Lithography; 3.1. Introduction; 3.2. Different equipment, its operation and limits: current and future solutions; 3.2.1. Gaussian beam; 3.2.2. Shaped electron beam; 3.2.3. Multi-electron beam; 3.3. Maskless photolithography; 3.3.1. Optical lithography without a mask; 3.3.2. Charged particle maskless lithography; 3.4. Alignment; 3.5. Electron-sensitive resists; 3.6. Electron-matter interaction; 3.7. Physical effect of electronic bombardment in the target; 3.7.1. Polymerizing, chemical bond breaking"]
[{"$nulls":4},"3.7.2. Thermal effect"]
[null,null,null,"Sommario/riassunto","\"Lithography is now a complex tool at the heart of a technological process for manufacturing micro and nanocomponents. A multidisciplinary technology, lithography continues to push the limits of optics, chemistry, mechanics, micro and nano-fluids, etc. This book deals with essential technologies and processes, primarily used in industrial manufacturing of microprocessors and other electronic components\"--"]