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[null,"1.","Record Nr.",null,"UNINA9910698701403321"]
[null,null,"Autore",null,"Wei Su-Huai"]
[null,null,"Titolo",null,"Design of Shallow p-type Dopants in ZnO (Presentation) [[electronic resource] /] / Su-Huai Wei, J. Li, and Y. Yan"]
[null,null,"Pubbl/distr/stampa",null,"[Place of publication not identified], : Washington, D.C., : United States. Dept. of Energy, : Oak Ridge, Tenn., : distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 2008"]
[null,null,"Descrizione fisica",null,"1 online resource (32 pages) : color illustrations"]
[null,null,"Collana",null,"NREL/PR ; ; 520-43248"]
[null,null,"Soggetti",null,"Semiconductor doping"]
[{"$nulls":4},"Doped semiconductors"]
[{"$nulls":4},"Crystals - Defects"]
[null,null,"Lingua di pubblicazione",null,"Inglese"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,null,null,"Note generali","Published through the Information Bridge: DOE Scientific and Technical Information."]
[{"$nulls":4},"\"May 2008.\""]
[{"$nulls":4},"Presented at the 33rd IEEE Photovoltaic Specialist Conference, 11-16 May 2008 in San Diego, California."]
[{"$nulls":4},"National Renewable Energy Laboratory (NREL), Golden, CO."]
[null,null,null,"Sommario/riassunto","ZnO is a promising material for short wave-length opto-electronic devices such as UV lasers and LEDs due to its large exciton binding energy and low material cost. ZnO can be doped easily n-type, but the realization of stable p-type ZnO is rather difficult. Using first-principles band structure methods the authors address what causes the p-type doping difficulty in ZnO and how to overcome the p-type doping difficulty in ZnO."]