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[null,"1.","Record Nr.",null,"UNIORUON00034377"]
[null,null,"Autore",null,"Huc, Évariste Régis"]
[null,null,"Titolo",null,"Tartarie & Thibet inconnus / R.P. Huc ; introd. de P. Deffontaines"]
[null,null,"Pubbl/distr/stampa",null,"Paris, : Les Oeuvres Représentatives, 1932"]
[null,null,"Descrizione fisica",null,"199 p., c. di tav. ; 20 cm"]
[null,null,"Classificazione",null,"INT VIII A"]
[null,null,"Soggetti",null,"TIBET - Geografia"]
[{"$nulls":4},"ASIA CENTRALE - Geografia"]
[null,null,"Lingua di pubblicazione",null,"Francese"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,"2.","Record Nr.",null,"UNINA9910557401503321"]
[null,null,"Autore",null,"Górecki Krzysztof"]
[null,null,"Titolo",null,"Latest Advances in Electrothermal Models"]
[null,null,"Pubbl/distr/stampa",null,"Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021"]
[null,null,"Descrizione fisica",null,"1 online resource (140 p.)"]
[null,null,"Soggetti",null,"History of engineering and technology"]
[null,null,"Lingua di pubblicazione",null,"Inglese"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,null,null,"Sommario/riassunto","This book is devoted to the latest advances in the area of electrothermal modelling of electronic components and networks. It contains eight sections by different teams of authors. These sections contain the results of: (a) electro-thermal simulations of SiC power MOSFETs using a SPICE-like simulation program; (b) modelling thermal properties of inductors taking into account the influence of the core volume on the efficiency of heat removal; (c) investigations into the problem of inserting a temperature sensor in the neighbourhood of a chip to monitor its junction temperature; (d) computations of the internal temperature of power LEDs situated in modules containing multiple-power LEDs, taking into account both self-heating in each power LED and mutual thermal couplings between each diode; (e) analyses of DC-DC converters using the electrothermal averaged model of the diode-transistor switch, including an IGBT and a rapid-switching diode; (f) electrothermal modelling of SiC power BJTs; (g) analysis of the efficiency of selected algorithms used for solving heat transfer problems at nanoscale; (h) analysis related to thermal simulation of the test structure dedicated to heat-diffusion investigation at the nanoscale."]