{"text_format":"2","workbook":"xls","n_sheets":1,"sheets":["report2"],"not_rendered":{"charts":0,"images":0,"macros":0,"external_links":1,"defined_names":1,"comments":0,"pivot_tables":0},"unopened":[],"bounds":{"document_bytes":16777216,"sheet_cells":100000,"run_cost":"one","rows_first":2000,"rows_last":500,"rows_between":2000,"halvings":0,"cell_chars":16384,"cell_head_chars":4096},"cells_cut":0,"cells_raw":0,"read":"whole","date_system":"1900","formulas":"cached_only"}

{"sheet":"report2","index":0,"n_rows":20,"n_cols":5,"rows_kept":20,"cut":false,"hidden":false,"merged":[[0,2,0,3],[0,4,0,5],[1,2,1,3],[1,4,1,5],[2,2,2,3],[2,4,2,5],[3,2,3,3],[5,2,5,3],[7,2,7,3],[8,2,8,3],[9,2,9,3],[10,2,10,3],[13,2,13,3],[14,2,14,3],[17,2,17,3]],"flags":["formulas_cached_only"]}
[null,"1.","Record Nr.",null,"UNINA9910522952103321"]
[null,null,"Autore",null,"Gott James A."]
[null,null,"Titolo",null,"Defects in self-catalysed III-V nanowires / / James A. Gott"]
[null,null,"Pubbl/distr/stampa",null,"Cham, Switzerland : , : Springer, , [2022]"]
[{"$nulls":4},"©2022"]
[null,null,"ISBN",null,"9783030940621"]
[{"$nulls":4},"9783030940614"]
[null,null,"Descrizione fisica",null,"1 online resource (158 pages)"]
[null,null,"Collana",null,"Springer Theses"]
[null,null,"Disciplina",null,"621.3815"]
[null,null,"Soggetti",null,"Nanowires"]
[{"$nulls":4},"Semiconductors - Materials"]
[{"$nulls":4},"Semiconductors - Defects"]
[null,null,"Lingua di pubblicazione",null,"Inglese"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,null,null,"Nota di bibliografia","Includes bibliographical references and index."]
[null,null,"Nota di contenuto",null,"Intro -- Supervisor's Foreword -- Abstract -- Acknowledgements -- Contents -- Acronyms -- 1 Introduction -- 1.1 Introduction -- 1.2 Nanowires -- 1.2.1 Introduction to Nanowires -- 1.2.2 Nanowire Growth -- 1.2.3 Physical Properties -- 1.2.4 Applications -- 1.3 Defects in the III-V System -- 1.3.1 Defects in Nanowires -- 1.3.2 Mechanisms of Defect Motion -- 1.4 Nanowire Heterostructures -- 1.4.1 Dubrovskii Kinetic Growth Model -- 1.4.2 Priante/Glas Model -- 1.4.3 Muraki Model -- 1.4.4 Empirical Sigmoidal Models -- 1.4.5 Measuring Heterostructure Features Using STEM -- 1.5 Thesis Outline -- References -- 2 Methods -- 2.1 Electron Microscopy -- 2.1.1 Illumination System -- 2.1.2 Aberrations -- 2.1.3 Sample Interaction -- 2.1.4 TEM -- 2.1.5 STEM -- 2.1.6 SEM -- 2.1.7 Microscopes -- 2.2 Sample Preparation -- 2.2.1 Sample Growth -- 2.2.2 Microtome -- 2.2.3 Conventional TEM and STEM Preparation -- 2.2.4 In-Situ Microscopy -- 2.3 Simulations -- 2.4 Measuring Strain Using GPA -- 2.5 Spectroscopy -- 2.5.1 Cathodoluminescence -- 2.5.2 Energy Dispersive X-Ray Spectroscopy -- References -- 3 Defects in Nanowires -- 3.1 Introduction -- 3.2 Types of Defects in GaAs(P) Nanowires -- 3.2.1 Analysing Burgers Vectors -- 3.2.2 Σ3 {112} Defect-The Three Monolayer Defect -- 3.2.3 Defects with Non-Zero Burgers Vector -- 3.3 Defect Origin -- 3.4 Cross-Sections of Defective Nanowires -- 3.5 Effect on Nanowire Properties -- 3.6 Chapter Summary -- References -- 4 Defect Dynamics in Nanowires -- 4.1 "]
[{"$nulls":4},"Introduction -- 4.2 Forces Behind Defect Motion in Nanowires -- 4.3 Motion of 3 Monolayer Defects -- 4.3.1 Complete Removal of Defect from the Nanowire -- 4.3.2 Movement Stopped by Interactions -- 4.3.3 No Movement: Stable Configurations -- 4.4 Velocity Analysis -- 4.5 Motion of More Complicated Defect Configurations -- 4.6 Chapter Summary -- References."]
[{"$nulls":4},"5 Interfaces in Nanowire Axial Heterostructures -- 5.1 Introduction -- 5.2 GaAsP-GaAs-GaAsP Quantum Dots in Self-Catalysed Nanowires -- 5.2.1 Converting ADF Intensity to Composition -- 5.3 Interface Models -- 5.3.1 Dubrovskii's Kinetic Model -- 5.3.2 Comparing Models -- 5.4 Interface Width -- 5.5 Size of Quantum Dots -- 5.6 Chapter Summary -- References -- 6 Conclusions and Future Work."]