{"text_format":"2","workbook":"xls","n_sheets":1,"sheets":["report2"],"not_rendered":{"charts":0,"images":0,"macros":0,"external_links":1,"defined_names":1,"comments":0,"pivot_tables":0},"unopened":[],"bounds":{"document_bytes":16777216,"sheet_cells":100000,"run_cost":"one","rows_first":2000,"rows_last":500,"rows_between":2000,"halvings":0,"cell_chars":16384,"cell_head_chars":4096},"cells_cut":0,"cells_raw":0,"read":"whole","date_system":"1900","formulas":"cached_only"}

{"sheet":"report2","index":0,"n_rows":22,"n_cols":5,"rows_kept":22,"cut":false,"hidden":false,"merged":[[0,2,0,3],[0,4,0,5],[1,2,1,3],[1,4,1,5],[2,2,2,3],[3,2,3,3],[4,2,4,3],[5,2,5,3],[6,2,6,3],[7,2,7,3],[10,2,10,3],[11,2,11,3],[15,2,15,3]],"flags":["formulas_cached_only"]}
[null,"1.","Record Nr.",null,"UNINA9910465950703321"]
[null,null,"Titolo",null,"Transistors [[electronic resource] ] : types, materials, and applications / / Benjamin M. Fitzgerald, editor"]
[null,null,"Pubbl/distr/stampa",null,"Hauppauge, N.Y., : Nova Science Publishers, c2010"]
[null,null,"ISBN",null,"1-61728-074-7"]
[null,null,"Descrizione fisica",null,"1 online resource (210 p.)"]
[null,null,"Collana",null,"Electrical engineering developments"]
[null,null,"Disciplina",null,"621.3815/28"]
[null,null,"Soggetti",null,"Transistors"]
[{"$nulls":4},"Semiconductors"]
[{"$nulls":4},"Electronic books."]
[null,null,"Lingua di pubblicazione",null,"Inglese"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,null,null,"Note generali","Description based upon print version of record."]
[null,null,null,"Nota di bibliografia","Includes bibliographical references and index."]
[null,null,"Nota di contenuto",null,"\"\"TRANSISTORS: TYPES, MATERIALS AND APPLICATIONS \"\"; \"\"TRANSISTORS: TYPES, MATERIALS AND APPLICATIONS \"\"; \"\"CONTENTS \"\"; \"\"PREFACE \"\"; \"\"CARBON NANOMATERIAL TRANSISTORSAND CIRCUITS\"\"; \"\"Abstract\"\"; \"\"Introduction\"\"; \"\"I. Carbon Nanomaterials\"\"; \"\"A. Atomic Composition\"\"; \"\"B. Physical Properties\"\"; \"\"C. Electrical Properties\"\"; \"\"II. Carbon Nanotube FETs (CNFETs)\"\"; \"\"A. General\"\"; \"\"B. Transistor Types\"\"; \"\"III. Graphene Nanoribbon FETs (GNRFETs)\"\"; \"\"IV. Modeling\"\"; \"\"A. CNFET Modeling\"\"; \"\"1. SPICE Compatible MOSFET Models\"\"; \"\"2. SBFET Models\"\"; \"\"B. GNRFET Modeling\"\""]
[{"$nulls":4},"\"\"V. Logic Gates and Circuit Structures\"\"\"\"A. CNFET Logic Structures\"\"; \"\"B. GNRFET Logic Structures\"\"; \"\"C. Circuit Structures\"\"; \"\"VI. Challenges and Opportunities\"\"; \"\"VII. Conclusion\"\"; \"\"Acknowledgment\"\"; \"\"References\"\"; \"\"ELECTRONIC PROPERTIES AND SELF CONSISTENTSIMULATIONS OF CARBON NANOTUBESIN TRANSISTOR TECHNOLOGY\"\"; \"\"Abstract\"\"; \"\"1. Introduction\"\"; \"\"2. Physical Properties and Classification of Carbon Nanotubes\"\"; \"\"2.1. Properties of Graphene Structure\"\"; \"\"2.2. Properties of Carbon Nanotubes\"\"; \"\"2.3. Electron Wavefunctions in Carbon Nanotubes\"\""]
[{"$nulls":4},"\"\"3. Calculation of Electronic Properties of Carbon Nanotubes\"\"\"\"3.1. Transmission Spectrum and Current Calculation of Nanoâ€?ScaledDevices Using Landauerâ€?s Formula\"\"; \"\"3.2. Non-equilibrium Greenâ€?s Function Formalism for Realistic Calculationof Current-Voltage Relationships of Carbon Nanotubes\"\"; \"\"3.3. Density Functional Theory for the Calculation of the ElectronDensityâ€?Potential Relationship in Carbon Nanotube Devices\"\"; \"\"3.4. DFTâ€?NEGF "]
[{"$nulls":4},"Simulations of Example Nanotubes\"\"; \"\"3.4.1. Simulations of Semiconductor Nanotubes\"\"; \"\"3.4.2. Simulations of Metallic Nanotubes\"\""]
[{"$nulls":4},"\"\"4. Carbon Nanotube Field Effect Transistors, Review of TheirEquivalent Circuit Models and Experimental Applications\"\"\"\"5. Conclusion\"\"; \"\"References\"\"; \"\"NANOWIRE FIELD-EFFECT TRANSISTORS\"\"; \"\"Abstract \"\"; \"\"1. Introduction \"\"; \"\"2. Brief Introduction to Nanowire Electronics \"\"; \"\"3. Typical 1-D Nanostructures \"\"; \"\"3.1. Nanorods \"\"; \"\"3.2. Nanowires\"\"; \"\"3.3. Nanotubes \"\"; \"\"3.4. Nanobelts \"\"; \"\"3.5. 1-D nanoscale Heterostructures \"\"; \"\"4. Application of Nanowire Transistors \"\"; \"\"4.1. Sensors \"\"; \"\"4.2. Light-Emitting Diodes and Nanolasers \"\"; \"\"4.3. Single Nanowire Solar Cells \"\""]
[{"$nulls":4},"\"\"4.4. Transparent Electronics \"\"\"\"5. Conclusion \"\"; \"\"Acknowledgments \"\"; \"\"References \"\"; \"\"OPERATING CHARACTERISTICS OF MOSFETSIN CHAOTIC OSCILLATORS\"\"; \"\"Abstract\"\"; \"\"Introduction\"\"; \"\"Linear Operations\"\"; \"\"Nonlinear Operators: PWL Functions\"\"; \"\"Chaotic Oscillators Design: Chuaâ€?s Circuit\"\"; \"\"Chaotic Synchronization and Encryption\"\"; \"\"Conclusion\"\"; \"\"Acknowledgments\"\"; \"\"References\"\"; \"\"ONTHEVARIATIONALINEQUALITIESAPPROACHTOSTUDYELECTRICALCIRCUITSWITHTRANSISTORS\"\"; \"\"Abstract\"\"; \"\"1.Introduction\"\"; \"\"2.Set-valuedAmpere-VoltCharacteristics\"\"; \"\"2.1.DiodeModels\"\""]
[{"$nulls":4},"\"\"2.2.TransistorModels\"\""]