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[null,"1.","Record Nr.",null,"UNINA9910450673803321"]
[null,null,"Autore",null,"Galler Martin <1977->"]
[null,null,"Titolo",null,"Multigroup equations for the description of the particle transport in semiconductors [[electronic resource] /] / Martin Galler"]
[null,null,"Pubbl/distr/stampa",null,"Hackensack, N.J., : World Scientific, c2005"]
[null,null,"ISBN",null,"1-281-90577-1"]
[{"$nulls":4},"9786611905774"]
[{"$nulls":4},"981-270-338-1"]
[null,null,"Descrizione fisica",null,"1 online resource (247 p.)"]
[null,null,"Collana",null,"Series on advances in mathematics for applied sciences ; ; v. 70"]
[null,null,"Disciplina",null,"530.13/8"]
[null,null,"Soggetti",null,"Transport theory - Mathematics"]
[{"$nulls":4},"Semiconductors - Mathematics"]
[{"$nulls":4},"Electronic books."]
[null,null,"Lingua di pubblicazione",null,"Inglese"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,null,null,"Note generali","Description based upon print version of record."]
[null,null,null,"Nota di bibliografia","Includes bibliographical references (p. 217-223) and index."]
[null,null,"Nota di contenuto",null,"Preface; Contents; 1. Introduction; 2. The Bloch-Boltzmann-Peierls Equations; 3. Multigroup Model Equations for Polar Semiconductors; 4. Particle Transport in Indium Phosphide; 5. Particle Transport in Gallium Arsenide; 6. Multigroup Equations for Degenerated Carrier Gases; 7. The Two-dimensional Electron Gas; 8. The Multigroup-WENO Solver for Semiconductor Device Simulation; 9. Simulation of Silicon Devices; 10. Simulation of Gallium Arsenide Devices; 11. Conclusion; Bibliography; Related Publications of the Author; Index"]
[null,null,null,"Sommario/riassunto","Deterministic simulation of the particle transport in semiconductor devices is an interesting alternative to the common Monte Carlo approach. In this book, a state-of-the-art technique called the multigroup approach is presented and applied to a variety of transport problems in bulk semiconductors and semiconductor devices. High-field effects as well as hot-phonon phenomena in polar semiconductors are studied in detail. The mathematical properties of the presented numerical method are studied, and the method is applied to simulating the transport of a two-dimensional electron gas formed at a s"]