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[null,"1.","Record Nr.",null,"UNINA9910450147803321"]
[null,null,"Titolo",null,"GaN-based materials and devices [[electronic resource] ] : growth, fabrication, characterization and performance / / editors, M.S. Shur, R.F. Davis"]
[null,null,"Pubbl/distr/stampa",null,"Singapore ; ; River Edge, N.J., : World Scientific, c2004"]
[null,null,"ISBN",null,"1-281-34762-0"]
[{"$nulls":4},"9786611347628"]
[{"$nulls":4},"981-256-236-2"]
[null,null,"Edizione",null,"[33th ed.]"]
[null,null,"Descrizione fisica",null,"1 online resource (295 p.)"]
[null,null,"Collana",null,"Selected topics in electronics and systems ; ; v. 33"]
[null,null,"Disciplina",null,"537.6223"]
[{"$nulls":4},"621.38152"]
[null,null,"Soggetti",null,"Gallium nitride"]
[{"$nulls":4},"Semiconductors"]
[{"$nulls":4},"Electronic books."]
[null,null,"Lingua di pubblicazione",null,"Inglese"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,null,null,"Note generali","Description based upon print version of record."]
[null,null,null,"Nota di bibliografia","Includes bibliographical references."]
[null,null,"Nota di contenuto",null,"Preface; CONTENTS; Materials Properties of Nitrides. Summary; Kinetics, Microstructure and Strain in GaN Thin Films Grown Via Pendeo-Epitaxy; Strain of GaN Layers Grown Using 6H-SiC(0001) Substrates with Different Buffer Layers; Growth of Thick GaN Films and Seeds for Bulk Crystal Growth; Cracking of GaN Films; Direct Bonding of GaN and SiC;  A Novel Technique for Electronic Device Fabrication; Electronic Properties of GaN (0001) - Dielectronic Interfaces; Transport and Noise Properties; Quasi-Ballistic and Overshoot Transport in Group III-Nitrides; High Field Transport in AIN"]
[{"$nulls":4},"Generation-Recombination Noise in GaN-Based DevicesInsulated Gate III-N Heterostructure Field-Effect Transistors; High Voltage AIGaN/GaN Heterojunction Transistors; Etched Aperture GaN CAVET Through Photoelectrochemical Wet Etching; n-AlGaAs/p-GaAs/n-GaN Heterojunction Bipolar Transistor: The First Transistor Formed Via Wafer Fusion"]
[null,null,null,"Sommario/riassunto","The unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices.  High electron mobility andsaturation velocity, high sheet carrier concentration "]
[{"$nulls":4},"atheterojunction interfaces, high breakdown field, and low thermalimpedance of GaN-based films grown over SiC or bulk AlN substratesmake nitride-based electronic devices very promising."]