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[null,"1.","Record Nr.",null,"UNINA9910299747703321"]
[null,null,"Titolo",null,"Bias temperature instability for devices and circuits / / Tibor Grasser, editor"]
[null,null,"Pubbl/distr/stampa",null,"New York : , : Springer, , 2014"]
[null,null,"ISBN",null,"1-4614-7909-6"]
[null,null,"Edizione",null,"[1st ed. 2014.]"]
[null,null,"Descrizione fisica",null,"1 online resource (xi, 810 pages) : illustrations (some color)"]
[null,null,"Collana",null,"Gale eBooks"]
[null,null,"Disciplina",null,"621.3192"]
[null,null,"Soggetti",null,"Metal oxide semiconductor field-effect transistors"]
[null,null,"Lingua di pubblicazione",null,"Inglese"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,null,null,"Note generali","Description based upon print version of record."]
[null,null,null,"Nota di bibliografia","Includes bibliographical references."]
[null,null,"Nota di contenuto",null,"Introduction -- Characterization, Experimental Challenges -- Advanced Characterization -- Characterization of Nanoscale Devices -- Statistical Properties/Variability -- Theoretical Understanding -- Possible Defects: Experimental -- Possible Defects: First Principles -- Modeling -- Technological Impact -- Silicon dioxides/SiON -- High-k oxides -- Alternative technologies -- Circuits."]
[null,null,null,"Sommario/riassunto","This book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability.  Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime.  ·         Enables readers to understand and model negative bias temperature instability, with an emphasis on dynamics; ·         Includes coverage of DC vs. AC stress, duty factor dependence and bias dependence; ·         Explains time dependent defect spectroscopy, as a measurement method that operates on nanoscale MOSFETs; ·         Introduces new defect model for metastable defect states, nonradiative multiphonon theory and stochastic behavior."]