{"text_format":"2","workbook":"xls","n_sheets":1,"sheets":["report2"],"not_rendered":{"charts":0,"images":0,"macros":0,"external_links":1,"defined_names":2,"comments":0,"pivot_tables":0},"unopened":[],"bounds":{"document_bytes":16777216,"sheet_cells":100000,"run_cost":"one","rows_first":2000,"rows_last":500,"rows_between":2000,"halvings":0,"cell_chars":16384,"cell_head_chars":4096},"cells_cut":0,"cells_raw":0,"read":"whole","date_system":"1900","formulas":"cached_only"}

{"sheet":"report2","index":0,"n_rows":44,"n_cols":5,"rows_kept":44,"cut":false,"hidden":false,"merged":[[0,2,0,3],[0,4,0,5],[1,2,1,3],[1,4,1,5],[2,2,2,3],[2,4,2,5],[3,2,3,3],[4,2,4,3],[8,2,8,3],[9,2,9,3],[11,2,11,3],[13,2,13,3],[14,2,14,3],[18,2,18,3],[26,2,26,3],[26,4,26,5],[27,2,27,3],[27,4,27,5],[28,2,28,3],[28,4,28,5],[29,2,29,3],[32,2,32,3],[33,2,33,3],[34,2,34,3],[35,2,35,3],[36,2,36,3],[37,2,37,3],[38,2,38,3]],"flags":["formulas_cached_only"]}
[null,"1.","Record Nr.",null,"UNINA9910144581703321"]
[null,null,"Autore",null,"Steigerwald Joseph M"]
[null,null,"Titolo",null,"Chemical mechanical planarization of microelectronic materials [[electronic resource] /] / Joseph M. Steigerwald, Shyam P. Murarka, Ronald J. Gutmann"]
[null,null,"Pubbl/distr/stampa",null,"Weinheim, : Wiley-VCH, 2004"]
[null,null,"ISBN",null,"1-281-84314-8"]
[{"$nulls":4},"9786611843144"]
[{"$nulls":4},"3-527-61774-4"]
[{"$nulls":4},"3-527-61775-2"]
[null,null,"Descrizione fisica",null,"1 online resource (339 p.)"]
[null,null,"Disciplina",null,"621.3815"]
[{"$nulls":4},"621.38152"]
[null,null,"Soggetti",null,"Microelectronics - Materials"]
[{"$nulls":4},"Grinding and polishing"]
[null,null,"Lingua di pubblicazione",null,"Inglese"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,null,null,"Note generali","Description based upon print version of record."]
[null,null,null,"Nota di bibliografia","Includes bibliographical references and index."]
[null,null,"Nota di contenuto",null,"Chemical Mechanical Planarization of Microelectronic Materials; CONTENTS; Preface; 1 Chemical Mechanical Planarization - An Introduction; 1.1 Introduction; 1.2 Applications; 1.3 The CMP Process; 1.4 CMP Tools; 1.5 Process Integration; 1.6 Conclusion and Book Outline; References; 2 Historical Motivations for CMP; 2.1 Advanced Metallization Schemes; 2.1.1 Interconnect Delay Impact on Performance; 2.1.2 Methods of Reducing Interconnect Delay; 2.1.3 Planarity Requirements for Multilevel Metallization; 2.2 Planarization Schemes; 2.2.1 Smoothing and Local Planarization; 2.2.2 Global Planarization"]
[{"$nulls":4},"2.3 CMP Planarization2.3.1 Advantages of CMP; 2.3.2 Disadvantages of CMP; 2.3.3 The Challenge of CMP; References; 3 CMP Variables and Manipulations; 3.1 Output Variables; 3.2 Input Variables; References; 4 Mechanical and Electrochemical Concepts for CMP; 4.1 Preston Equation; 4.2 Fluid Layer Interactions; 4.3 Boundary Layer Interactions; 4.3.1 Fluid Boundary Layer; 4.3.2 Double Layer; 4.3.3 Metal Surface Films; 4.3.4 Mechanical Abrasion; 4.4 Abrasion Modes; 4.4.1 Polishing vs. Grinding; 4.4.2 Hertzian Indentation vs. Fluid-Based Wear; 4.5 The Polishing Pad; 4.5.1 Pad Materials and Properties"]
[{"$nulls":4},"4.5.2 Pad Conditioning4.6 Electrochemical Phenomena; 4.6.1 "]
[{"$nulls":4},"Reduction-Oxidation Reactions; 4.6.2 Pourbaix Diagrams; 4.6.3 Mixed Potential Theory; 4.6.4 Example: Copper CMP in NH3-Based Slurries; 4.6.5 Example: Copper-Titanium Interaction; 4.7 Role of Chemistry in CMP; 4.8 Abrasives; References; 5 Oxide CMP Processes - Mechanisms and Models; 5.1 The Role of Chemistry in Oxide Polishing; 5.1.1 Glass Polishing Mechanisms; 5.1.2 The Role of Water in Oxide Polishing; 5.1.3 Chemical Interactions Between Abrasive and Oxide Surface; 5.2 Oxide CMP in Practice; 5.2.1 Polish Rate Results"]
[{"$nulls":4},"5.2.2 Planarization Results5.2.3 CMP in Manufacturing; 5.2.4 Yield Issues; 5.3 Summary; References; 6 Tungsten and CMP Processes; 6.1 Inlaid Metal Patterning; 6.1.1 RIE Etch Back; 6.1.2 Metal CMP; 6.2 Tungsten CMP; 6.2.1 Surface Passivation Model for Tungsten CMP; 6.2.2 Tungsten CMP Processes; 6.3 Summary; References; 7 Copper CMP; 7.1 Proposed Model for Copper CMP; 7.2 Surface Layer Formation - Planarization; 7.2.1 Formation of Native Surface Films; 7.2.2 Formation of Nonnative Cu-BTA Surface Film; 7.3 Material Dissolution; 7.3.1 Removal of Abraded Material"]
[{"$nulls":4},"7.3.2 Increasing Solubility with Complexing Agent7.3.3 Increasing Dissolution Rate with Oxidizing Agents; 7.3.4 Chemical Aspect of the Copper CMP Model; 7.4 Preston Equation; 7.4.1 Preston Coefficient; 7.4.2 Polish Rates; 7.4.3 Comparison of Kp Values; 7.5 Polish-Induced Stress; 7.6 Pattern Geometry Effects; 7.6.1 Dishing and Erosion in Cu/SiO2 System; 7.6.2 Optimization of Process to Minimize Dishing and Erosion; 7.6.3 Summary; References; 8 CMP of Other Materials and New CMP Applications; 8.1 The Front-End Applications in Silicon IC Fabrication"]
[{"$nulls":4},"8.1.1 Polysilicon CMP for Deep Trench Capacitor Fabrication"]
[null,null,null,"Sommario/riassunto","Chemical Mechanical Planarization (CMP) plays an important role in today's microelectronics industry. With its ability to achieve global planarization, its universality (material insensitivity), its applicability to multimaterial surfaces, and its relative cost-effectiveness, CMP is the ideal planarizing medium for the interlayered dielectrics and metal films used in silicon integrated circuit fabrication. But although the past decade has seen unprecedented research and development into CMP, there has been no single-source reference to this rapidly emerging technology-until now.Chemica"]
[null,"2.","Record Nr.",null,"UNINA9910418317203321"]
[null,null,"Autore",null,"Brezas Spyros"]
[null,null,"Titolo",null,"Investigation on the dissemination of unit watt in airborne sound and applications / / Spyros Brezas"]
[null,null,"Pubbl/distr/stampa",null,"Berlin/Germany, : Logos Verlag Berlin, 2019"]
[{"$nulls":4},"Berlin, Germany : , : Logos Verlag Berlin GmbH, , [2019]"]
[{"$nulls":4},"©2019"]
[null,null,"ISBN",null,"9783832549718"]
[null,null,"Descrizione fisica",null,"1 online resource (iv, 197 pages) : illustrations, charts; digital file(s)"]
[null,null,"Collana",null,"Aachener Beitrage zur Akustik"]
[null,null,"Disciplina",null,"620.2"]
[null,null,"Soggetti",null,"Engineering - Acoustics"]
[null,null,"Lingua di pubblicazione",null,"Inglese"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,null,null,"Note generali","Author's doctoral thesis, Rheinisch-Westfälische Technische Hochschule Aachen."]
[null,null,null,"Nota di bibliografia","Includes bibliographical references."]
[null,null,null,"Sommario/riassunto","Sound power describes the emission of sound from sound sources. Despite today's state-of-the art measurement techniques, the current sound power determination methods are restricted due to various limitations. To overcome these limitations, a new sound power determination method is proposed, aiming at the establishment of traceability in airborne sound. This will enable the characterization of a sound source by its free field sound power. The dissertation describes a study on the dissemination process, which will allow the sound power of a device under test located at a real surrounding environment, to be referred to its free field sound power. Apart from the sound power, the corresponding uncertainty may be estimated in a transparent way, where each uncertainty component is provided. The basic tool for the dissemination process is the substitution method using aerodynamic reference sound sources, applied to both sound pressure and sound intensity measurements. Initially, a theoretical investigation deals with the factors that influence the substitution method. Experimental results are then presented based on measurements using a specially designed scanning apparatus. The transition from calibration to in situ conditions and the required correction, due to changes in environmental and operational conditions, is then discussed. In the last section, the sound power level of devices under test is determined along with its related uncertainty, which is further compared to the up-"]
[{"$nulls":4},"to-date uncertainty values."]