{"text_format":"2","workbook":"xls","n_sheets":1,"sheets":["report2"],"not_rendered":{"charts":0,"images":0,"macros":0,"external_links":1,"defined_names":2,"comments":0,"pivot_tables":0},"unopened":[],"bounds":{"document_bytes":16777216,"sheet_cells":100000,"run_cost":"one","rows_first":2000,"rows_last":500,"rows_between":2000,"halvings":0,"cell_chars":16384,"cell_head_chars":4096},"cells_cut":0,"cells_raw":0,"read":"whole","date_system":"1900","formulas":"cached_only"}

{"sheet":"report2","index":0,"n_rows":41,"n_cols":5,"rows_kept":41,"cut":false,"hidden":false,"merged":[[0,2,0,3],[0,4,0,5],[1,2,1,3],[1,4,1,5],[2,2,2,3],[3,2,3,3],[4,2,4,3],[5,2,5,3],[6,2,6,3],[7,2,7,3],[8,2,8,3],[9,2,9,3],[10,2,10,3],[13,2,13,3],[13,4,13,5],[14,2,14,3],[14,4,14,5],[15,2,15,3],[15,4,15,5],[16,2,16,3],[17,2,17,3],[21,2,21,3],[22,2,22,3],[23,2,23,3],[25,2,25,3],[28,2,28,3],[29,2,29,3],[33,2,33,3]],"flags":["formulas_cached_only"]}
[null,"1.","Record Nr.",null,"UNINA990009832000403321"]
[null,null,"Titolo",null,"Uomini e donne del Medioevo / sotto la direzione di Jacques Le Goff"]
[null,null,"Pubbl/distr/stampa",null,"Roma ; Bari : Laterza, 2013"]
[null,null,"ISBN",null,"978-88-581-0870-3"]
[null,null,"Descrizione fisica",null,"447 p. : ill. ; 24 cm"]
[null,null,"Collana",null,"I Robinson , Letture"]
[null,null,"Disciplina",null,"940.1092"]
[null,null,"Locazione",null,"FSPBC"]
[null,null,"Collocazione",null,"XIV O 310"]
[null,null,"Lingua di pubblicazione",null,"Italiano"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,null,null,"Note generali","Traduzione di Carlo De Nonno"]
[null,"2.","Record Nr.",null,"UNINA9910142692403321"]
[null,null,"Autore",null,"Adachi Sadao <1950->"]
[null,null,"Titolo",null,"Properties of group-IV, III-V and II-VI semiconductors [[electronic resource] /] / Sadao Adachi"]
[null,null,"Pubbl/distr/stampa",null,"Chichester, England ; ; Hoboken, NJ, : John Wiley & Sons, c2005"]
[null,null,"ISBN",null,"1-280-26896-4"]
[{"$nulls":4},"9786610268962"]
[{"$nulls":4},"0-470-09034-0"]
[{"$nulls":4},"0-470-09033-2"]
[null,null,"Descrizione fisica",null,"1 online resource (407 p.)"]
[null,null,"Collana",null,"Wiley series in materials for electronic and optoelectronic applications"]
[null,null,"Disciplina",null,"621.3815/2"]
[{"$nulls":4},"621.38152"]
[null,null,"Soggetti",null,"Semiconductors - Materials"]
[{"$nulls":4},"Semiconductors - Analysis"]
[{"$nulls":4},"Electronic books."]
[null,null,"Lingua di pubblicazione",null,"Inglese"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,null,null,"Note generali","Description based upon print version of record."]
[null,null,null,"Nota di bibliografia","Includes bibliographical references and index."]
[null,null,"Nota di contenuto",null,"Properties of Group-IV, III-V and II-VI Semiconductors; Contents; Series Preface; Preface; Acknowledgments/Dedication; 1 Structural Properties; 1.1 Ionicity; 1.1.1 Definition; (a) Phillips ionicity; (b) Pauling ionicity; (c) Harrison ionicity; 1.1.2 Ionicity Value; 1.2 Elemental Isotopic Abundance and Molecular Weight; 1.2.1 Elemental Isotopic Abundance; 1.2.2 Molecular Weight; 1.3 Crystal Structure and Space Group; 1.3.1 Crystal Structure; (a) Diamond, zinc-blende and wurtzite structures; (b) Hexagonal and rhombohedral structures; (c) Rocksalt structure; 1.3.2 Space Group"]
[{"$nulls":4},"1.4 Lattice Constant and Related Parameters1.4.1 Lattice Constant; (a) Room-temperature value; (b) Near-neighbor distance; (c) External perturbation effect; 1.4.2 Molecular and Crystal Densities; 1.5 Structural Phase Transitions; 1.6 Cleavage; 1.6.1 Cleavage Plane; 1.6.2 Surface Energy; (a) Theoretical value; (b) Experimental value; References; 2 Thermal Properties; 2.1 Melting Point and Related Parameters; 2.1.1 Phase Diagram; 2.1.2 Melting Point; 2.2 Specific Heat; 2.3 Debye Temperature; 2.4 Thermal Expansion Coefficient; 2.5 Thermal Conductivity and Diffusivity; 2.5.1 Thermal Conductivity"]
[{"$nulls":4},"2.5.2 Thermal DiffusivityReferences; 3 Elastic Properties; 3.1 Elastic Constant; 3.1.1 General Remarks; 3.1.2 Room-temperature Value; "]
[{"$nulls":4},"3.1.3 External Perturbation Effect; (a) Temperature effect; (b) Pressure effect; 3.2 Third-order Elastic Constant; 3.3 Young's Modulus, Poisson's Ratio and Similar Properties; 3.3.1 Young's Modulus and Poisson's Ratio: Cubic Lattice; 3.3.2 Bulk Modulus, Shear Modulus and Similar Properties: Cubic Lattice; 3.3.3 Young's Modulus and Poisson's Ratio: Hexagonal Lattice; 3.3.4 Bulk Modulus, Shear Modulus and Similar Properties: Hexagonal Lattice; 3.4 Microhardness"]
[{"$nulls":4},"3.5 Sound VelocityReferences; 4 Lattice Dynamic Properties; 4.1 Phonon Dispersion Relation; 4.1.1 Brillouin Zone; (a) Face-centered cubic lattice; (b) Hexagonal lattice; (c) Rhombohedral lattice; 4.1.2 Phonon Dispersion Curve; (a) Cubic lattice; (b) Hexagonal lattice; 4.1.3 Phonon Density of States; 4.2 Phonon Frequency; 4.2.1 Room-temperature Value; 4.2.2 External Perturbation Effect; (a) Temperature effect; (b) Pressure effect; 4.3 Mode Grüneisen Parameter; 4.4 Phonon Deformation Potential; 4.4.1 Cubic Lattice; 4.4.2 Hexagonal Lattice; References"]
[{"$nulls":4},"5 Collective Effects and Some Response Characteristics5.1 Piezoelectric and Electromechanical Constants; 5.1.1 Piezoelectric Constant; (a) Piezoelectric stress constant; (b) Piezoelectric strain constant; 5.1.2 Electromechanical Coupling Constant; 5.2 Fröhlich Coupling Constant; References; 6 Energy-band Structure: Energy-band Gaps; 6.1 Basic Properties; 6.1.1 Energy-band Structure; (a) Diamond-type semiconductor; (b) Zinc-blende-type semiconductor; (c) Wurtzite-type semiconductor; 6.1.2 Electronic Density of States; 6.2 E(0)-gap Region; 6.2.1 Effective G-point Hamiltonian"]
[{"$nulls":4},"6.2.2 Room-temperature Value"]
[null,null,null,"Sommario/riassunto","Almost all the semiconductors of practical interest are the group-IV, III-V and II-VI semiconductors and the range of technical applications of such semiconductors is extremely wide.The purpose of this book is twofold:* to discuss the key properties of the group-IV, III-V and II-VI semiconductors* to systemize these properties from a solid-state physics aspectThe majority of the text is devoted to the description of the lattice structural, thermal, elastic, lattice dynamic, electronic energy-band structural, optical and carrier transport properties of these semiconductors. Some"]