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[null,"1.","Record Nr.",null,"UNINA9910139235303321"]
[null,null,"Titolo",null,"Guide to state-of-the-art electron devices / / edited by Joachim N. Burghartz"]
[null,null,"Pubbl/distr/stampa",null,"Chichester, West Sussex, U.K. : , : John Wiley & Sons Inc., , 2013"]
[{"$nulls":4},"[Piscataqay, New Jersey] : , : IEEE Xplore, , [2013]"]
[null,null,"ISBN",null,"1-118-51753-9"]
[{"$nulls":4},"1-118-51754-7"]
[{"$nulls":4},"1-299-24258-8"]
[{"$nulls":4},"1-118-51751-2"]
[null,null,"Descrizione fisica",null,"1 online resource (324 p.)"]
[null,null,"Collana",null,"Wiley - IEEE"]
[null,null,"Classificazione",null,"TEC008010"]
[null,null,"Disciplina",null,"621.3815/28"]
[null,null,"Soggetti",null,"Electronic apparatus and appliances"]
[null,null,"Lingua di pubblicazione",null,"Inglese"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,null,null,"Note generali","\"Papers by members of the IEEE Electron Devices Society.\"--T.p. verso."]
[null,null,null,"Nota di bibliografia","Includes bibliographical references and index."]
[null,null,"Nota di contenuto",null,"Foreword xi -- Preface xiii -- Contributors xvii -- Acknowledgments xix -- Introduction: Historic Timeline xxi -- PART I BASIC ELECTRON DEVICES -- 1 Bipolar Transistors 3 / John D. Cressler and Katsuyoshi Washio -- 1.1 Motivation 3 -- 1.2 The pn Junction and its Electronic Applications 5 -- 1.3 The Bipolar Junction Transistor and its Electronic Applications 10 -- 1.4 Optimization of Bipolar Transistors 15 -- 1.5 Silicon-Germanium Heterojunction Bipolar Transistors 17 -- References 19 -- 2 MOSFETs 21 / Hiroshi Iwai, Simon Min Sze, Yuan Taur and Hei Wong -- 2.1 Introduction 21 -- 2.2 MOSFET Basics 21 -- 2.3 The Evolution of MOSFETs 27 -- 2.4 Closing Remarks 31 -- References 31 -- 3 Memory Devices 37 / Kinam Kim and Dong Jin Jung -- 3.1 Introduction 37 -- 3.2 Volatile Memories 39 -- 3.3 Non-Volatile Memories 41 -- 3.4 Future Perspectives of MOS Memories 43 -- 3.5 Closing Remarks 45 -- References 46 -- 4 Passive Components 49 / Joachim N. Burghartz and Colin C. McAndrew -- 4.1 Discrete and Integrated Passive Components 49 -- 4.2 Application in Analog ICs and DRAM 52 -- 4.3 The Planar Spiral Inductor-A Case Study 54 -- 4.4 Parasitics in Integrated Circuits 57 -- References 57 -- 5 Emerging Devices 59 / Supriyo Bandyopadhyay, Marc Cahay and Avik W. Ghosh -- 5.1 Non-Charge-Based Switching 59 -- 5.2 Carbon as a Replacement for Silicon and the Rise of Grpahene Electronics and Moletronics 63 -- 5.3 Closing Remarks 66 -- References 67 -- PART II "]
[{"$nulls":4},"ASPECTS OF DEVICE AND IC MANUFACTURING -- 6 Electronic Materials 71 / James C. Sturm, Ken Rim, James S. Harris and Chung-Chih Wu -- 6.1 Introduction 71 -- 6.2 Silicon Device Technology 71 -- 6.3 Compound Semiconductor Devices 75 -- 6.4 Electronic Displays 79 -- 6.5 Closing Remarks 82 -- References 83 -- 7 Compact Modeling 85 / Colin C. McAndrew and Laurence W. Nagel -- 7.1 The Role of Compact Models 85 -- 7.2 Bipolar Transistor Compact Modeling 87 -- 7.3 MOS Transistor Compact Modeling 89 -- 7.4 Compact Modeling of Passive Components 92."]
[{"$nulls":4},"7.5 Benchmarking and Implementation 94 -- References 94 -- 8 Technology Computer Aided Design 97 / David Esseni, Christoph Jungemann, J&#x8A; urgen Lorenz, Pierpaolo Palestri, Enrico Sangiorgi and Luca Selmi -- 8.1 Introduction 97 -- 8.2 Drift-Diffusion Model 98 -- 8.3 Microscopic Transport Models 100 -- 8.4 Quantum Transport Models 101 -- 8.5 Process and Equipment Simulation 102 -- References 105 -- 9 Reliability of Electron Devices, Interconnects and Circuits 107 / Anthony S. Oates, Richard C. Blish, Gennadi Bersuker and Lu Kasprzak -- 9.1 Introduction and Background 107 -- 9.2 Device Reliability Issues 109 -- 9.3 Circuit-Level Reliability Issues 114 -- 9.4 Microscopic Approaches to Assuring Reliability of ICs 117 -- References 117 -- 10 Semiconductor Manufacturing 121 / Rajendra Singh, Luigi Colombo, Klaus Schuegraf, Robert Doering and Alain Diebold -- 10.1 Introduction 121 -- 10.2 Substrates 122 -- 10.3 Lithography and Etching 122 -- 10.4 Front-End Processing 124 -- 10.5 Back-End Processing 125 -- 10.6 Process Control 128 -- 10.7 Assembly and Test 129 -- 10.8 Future Directions 131 -- References 131 -- PART III APPLICATIONS BASED ON ELECTRON DEVICES -- 11 VLSI Technology and Circuits 135 / Kaustav Banerjee and Shuji Ikeda -- 11.1 Introduction 135 -- 11.2 MOSFET Scaling Trends 136 -- 11.3 Low-Power and High-Speed Logic Design 137 -- 11.4 Scaling Driven Technology Enhancements 139 -- 11.5 Ultra-Low Voltage Transistors 144 -- 11.6 Interconnects 144 -- 11.7 Memory Design 148 -- 11.8 System Integration 150 -- References 152 -- 12 Mixed-Signal Technologies and Integrated Circuits 157 / Bin Zhao and James A. Hutchby -- 12.1 Introduction 157 -- 12.2 Analog/Mixed-Signal Technologies in Scaled CMOS 159 -- 12.3 Data Converter ICs 161 -- 12.4 Mixed-Signal Circuits for Low Power Displays 164 -- 12.5 Image Sensor Technologies and Circuits 166 -- References 168 -- 13 Memory Technologies 171 / Stephen Parke, Kristy A. Campbell and Chandra Mouli -- 13.1 Semiconductor Memory History 171."]
[{"$nulls":4},"13.2 State of Mainstream Semiconductor Memory Today 178 -- 13.3 Emerging Memory Technologies 183 -- 13.4 Closing Remarks 185 -- References 186 -- 14 RF and Microwave Semiconductor Technologies 189 / Giovanni Ghione, Fabrizio Bonani, Ruediger Quay and Erich Kasper -- 14.1 III-V-Based: GaAs and InP 189 -- 14.2 Si and SiGe 194 -- 14.3 Wide Bandgap Devices (Group-III Nitrides, SiC and Diamond) 197 -- References 199 -- 15 Power Devices and ICs 203 / Richard K. Williams, Mohamed N. Darwish, Theodore J. Letavic and Mikael O&#x8A; stling -- 15.1 Overview of Power Devices and ICs 203 -- 15.2 Two-Carrier and High-Power Devices 205 -- 15.3 Power MOSFET Devices 206 -- 15.4 High-Voltage and Power ICs 209 -- 15.5 Wide Bandgap Power Devices 210 -- References 211 -- 16 Photovoltaic Devices 213 / Steven A. Ringel, Timothy J. Anderson, Martin A. Green, Rajendra Singh and Robert J. Walters -- 16.1 Introduction 213 -- 16.2 Silicon Photovoltaics 215 -- 16.3 Polycrystalline Thin-Film Photovoltaics 218 -- 16.4 III-V Compound Photovoltaics 219 -- 16.5 Future Concepts in Photovoltaics 220 -- References 222 -- 17 Large Area Electronics 225 / Arokia Nathan, Arman Ahnood, Jackson Lai and "]
[{"$nulls":4},"Xiaojun Guo -- 17.1 Thin-Film Solar Cells 225 -- 17.2 Large Area Imaging 229 -- 17.3 Flat Panel Displays 233 -- References 235 -- 18 Microelectromechanical Systems (MEMS) 239 / Darrin J. Young and Hanseup Kim -- 18.1 Introduction 239 -- 18.2 The 1960s - First Micromachined Structures Envisioned 239 -- 18.3 The 1970s - Integrated Sensors Started 240 -- 18.4 The 1980s - Surface Micromachining Emerged 241 -- 18.5 The 1990s - MEMS Impacted Various Fields 244 -- 18.6 The 2000s - Diversified Sophisticated Systems Enabled by MEMS 247 -- 18.7 Future Outlook 248 -- References 248 -- 19 Vacuum Device Applications 251 / David K. Abe, Baruch Levush, Carter M. Armstrong, Thomas Grant and William L. Menninger -- 19.1 Introduction 251 -- 19.2 Traveling-Wave Devices 252 -- 19.3 Klystrons 255 -- 19.4 Inductive Output Tubes 258."]
[{"$nulls":4},"19.5 Crossed-Field Devices 259 -- 19.6 Gyro-Devices 260 -- References 262 -- 20 Optoelectronic Devices 265 / Leda Lunardi, Sudha Mokkapati and Chennupati Jagadish -- 20.1 Introduction 265 -- 20.2 Light Emission in Semiconductors 266 -- 20.3 Photodetectors 268 -- 20.4 Integrated Optoelectronics 269 -- 20.5 Optical Interconnects 271 -- 20.6 Closing Remarks 271 -- References 271 -- 21 Devices for the Post CMOS Era 275 / Wilfried Haensch -- 21.1 Introduction 275 -- 21.2 Devices for the 8-nm Node with Conventional Materials 277 -- 21.3 New Channel Materials and Devices 282 -- 21.4 Closing Remarks 287 -- References 287 -- Index 291."]
[null,null,null,"Sommario/riassunto","Guide to State-of-the-Art Electron Devices is written by 70 world-class specialists who share their expert views on a particular group of electron devices or device aspects. The book's release coincides with the 60th anniversary of the former Institute of Radio Engineers (IRE) electron devices committee and the 35th anniversary of IEEE Electron Devices Society (EDS). Seminal achievements in the field of electron devices are displayed in a history timeline that runs throughout the book.Key features . Organized in a matrix of electron device types and cross-disciplines from photovoltaics and semiconductor manufacturing to VLSI technology and circuits. A timely desk reference with fully-integrated colour and a unique lay-out with sidebars to highlight the key terms. Contributed by IEEE Electron Devices Society (EDS) members from industry, academic and government institutions. Discusses the historical developments and speculates on future trends to give a more rounded picture of the topics coveredAn essential reference for both present and prospective EDS members, this guide surveys the commonalities and interrelationships of all electron device types covered by the EDS. It will also appeal to affiliate IEEE members wishing to develop their expertise in electron devices."]