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[null,"1.","Record Nr.",null,"UNINA9910286437103321"]
[null,null,"Titolo",null,"Historia y nación . I Historia de la educación y enseñanza de la historia : (actas del Congreso en homenaje a Josefina Zoraida Vázquez) / / Pilar Gonzalbo Aizpuru, coordinadora"]
[null,null,"Pubbl/distr/stampa",null,"Mexico City, Mexico : , : Colegio de México, , 1998"]
[null,null,"ISBN",null,"607-564-018-5"]
[{"$nulls":4},"968-12-0849-8"]
[null,null,"Edizione",null,"[Primera edición.]"]
[null,null,"Descrizione fisica",null,"1 online resource (266 pages)"]
[null,null,"Disciplina",null,"370.972"]
[null,null,"Soggetti",null,"Education - Mexico - History"]
[{"$nulls":4},"Universities and colleges - Mexico - History"]
[null,null,"Lingua di pubblicazione",null,"Spagnolo"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,"2.","Record Nr.",null,"UNINA9910137395803321"]
[null,null,"Titolo",null,"Resistive switching : from fundamentals of nanoionic redox processes to memristive device applications / / edited by Daniele Ielmini and Rainer Waser ; contributors, Hiro Akinaga [and sixty-four others]"]
[null,null,"Pubbl/distr/stampa",null,"Weinheim an der Bergstrasse, Germany : , : Wiley-VCH, , 2016"]
[{"$nulls":4},"©2016"]
[null,null,"ISBN",null,"3-527-68087-X"]
[{"$nulls":4},"3-527-68094-2"]
[{"$nulls":4},"3-527-68093-4"]
[null,null,"Descrizione fisica",null,"1 online resource (954 pages)"]
[null,null,"Disciplina",null,"621.381"]
[null,null,"Soggetti",null,"Nanoelectronics"]
[{"$nulls":4},"Memristors"]
[null,null,"Lingua di pubblicazione",null,"Inglese"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,null,null,"Note generali","Description based upon print version of record."]
[null,null,null,"Nota di bibliografia","Includes bibliographical references at the end of each chapters and index."]
[null,null,"Nota di contenuto",null,"Related Titles; Title Page; Copyright; Table of Contents; Preface; List of Contributors; Chapter 1: Introduction to Nanoionic Elements for Information Technology; 1.1 Concept of Two-Terminal Memristive Elements; 1.2 Memory Applications; 1.3 Logic Circuits; 1.4 Prospects and Challenges; Acknowledgments; References; Chapter 2: ReRAM Cells in the Framework of Two-Terminal Devices; 2.1 Introduction; 2.2 Two-Terminal Device Models; 2.3 Fundamental Description of Electronic Devices with Memory; 2.4 Device Engineer's View on ReRAM Devices as Two-Terminal Elements; 2.5 Conclusions; Acknowledgment"]
[{"$nulls":4},"ReferencesChapter 3: Atomic and Electronic Structure of Oxides; 3.1 Introduction; 3.2 Crystal Structures; 3.3 Electronic Structure; 3.4 Material Classes and Characterization of the Electronic States; 3.5 Electronic Structure of Selected Oxides; 3.6 Ellingham Diagram for Binary Oxides; Acknowledgments; References; Chapter 4: Defect Structure of Metal Oxides; 4.1 Definition of Defects; 4.2 General Considerations on the Equilibrium Thermodynamics of Point Defects; 4.3 Definition of Point Defects; 4.4 Space-Charge Effects; 4.5 Case Studies; References; Chapter 5: Ion Transport in Metal Oxides"]
[{"$nulls":4},"5.1 Introduction5.2 Macroscopic Definition; 5.3 Microscopic Definition; 5.4 Types of Diffusion Experiments; 5.5 Mass Transport along and "]
[{"$nulls":4},"across Extended Defects; 5.6 Case Studies; Acknowledgments; References; Chapter 6: Electrical Transport in Transition Metal Oxides; 6.1 Overview; 6.2 Structure of Transition Metal Oxides; 6.3 Models of Electrical Transport; 6.4 Band Insulators; 6.5 Half-Filled Mott Insulators; 6.6 Temperature-Induced Metal-Insulator Transitions in Oxides; References; Chapter 7: Quantum Point Contact Conduction; 7.1 Introduction"]
[{"$nulls":4},"7.2 Conductance Quantization in Metallic Nanowires7.3 Conductance Quantization in Electrochemical Metallization Cells; 7.4 Filamentary Conduction and Quantization Effects in Binary Oxides; 7.5 Conclusion and Outlook; References; Chapter 8: Dielectric Breakdown Processes; 8.1 Introduction; 8.2 Basics of Dielectric Breakdown; 8.3 Physics of Defect Generation; 8.4 Breakdown and Oxide Failure Statistics; 8.5 Implications of Breakdown Statistics for ReRAM; 8.6 Chemistry of the Breakdown Path and Inference on Filament Formation; 8.7 Summary and Conclusions; References"]
[{"$nulls":4},"Chapter 9: Physics and Chemistry of Nanoionic Cells9.1 Introduction; 9.2 Basic Thermodynamics and Heterogeneous Equilibria; 9.3 Phase Boundaries and Boundary Layers; 9.4 Nucleation and Growth; 9.5 Electromotive Force; 9.6 General Transport Processes and Chemical Reactions; 9.7 Solid-State Reactions; 9.8 Electrochemical (Electrode) Reactions; 9.9 Stoichiometry Polarization; Summary; Acknowledgments; References; Chapter 10: Electroforming Processes in Metal Oxide Resistive-Switching Cells; 10.1 Introduction; 10.2 Forming Mechanisms; 10.3 Technical Issues Related to Forming"]
[{"$nulls":4},"10.4 Summary and Outlook"]