{"text_format":"2","workbook":"xls","n_sheets":1,"sheets":["report2"],"not_rendered":{"charts":0,"images":0,"macros":0,"external_links":1,"defined_names":2,"comments":0,"pivot_tables":0},"unopened":[],"bounds":{"document_bytes":16777216,"sheet_cells":100000,"run_cost":"one","rows_first":2000,"rows_last":500,"rows_between":2000,"halvings":0,"cell_chars":16384,"cell_head_chars":4096},"cells_cut":0,"cells_raw":0,"read":"whole","date_system":"1900","formulas":"cached_only"}

{"sheet":"report2","index":0,"n_rows":30,"n_cols":5,"rows_kept":30,"cut":false,"hidden":false,"merged":[[0,2,0,3],[0,4,0,5],[1,2,1,3],[1,4,1,5],[2,2,2,3],[2,4,2,5],[3,2,3,3],[4,2,4,3],[5,2,5,3],[6,2,6,3],[7,2,7,3],[8,2,8,3],[10,2,10,3],[10,4,10,5],[11,2,11,3],[11,4,11,5],[12,2,12,3],[13,2,13,3],[14,2,14,3],[15,2,15,3],[16,2,16,3],[17,2,17,3],[18,2,18,3],[24,2,24,3],[25,2,25,3],[27,2,27,3]],"flags":["formulas_cached_only"]}
[null,"1.","Record Nr.",null,"UNICAMPANIAVAN0057577"]
[null,null,"Autore",null,"Bazoli, Giovanni"]
[null,null,"Titolo",null,"Mercato e disuguaglianza / Giovanni Bazoli ; postfazione di Francesco Paolo Casavola ; a cura di Ulrico Agnati"]
[null,null,"Pubbl/distr/stampa",null,"Brescia, : Morcelliana, 2006"]
[null,null,"ISBN",null,"88-372-2102-9"]
[null,null,"Descrizione fisica",null,"107 p. ; 19 cm."]
[null,null,"Disciplina",null,"261.85"]
[null,null,"Lingua di pubblicazione",null,"Italiano"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,"2.","Record Nr.",null,"UNINA9910999679903321"]
[null,null,"Titolo",null,"Gallium Nitride and Related Materials : Device Processing and Materials Characterization for Power Electronics Applications / / edited by Isik C. Kizilyalli, Jung Han, James S. Speck, Eric P. Carlson"]
[null,null,"Pubbl/distr/stampa",null,"Cham : , : Springer Nature Switzerland : , : Imprint : Springer, , 2025"]
[null,null,"ISBN",null,"3-031-83056-3"]
[null,null,"Edizione",null,"[1st ed. 2025.]"]
[null,null,"Descrizione fisica",null,"1 online resource (XXIX, 686 p. 463 illus., 366 illus. in color.)"]
[null,null,"Collana",null,"The Materials Research Society Series, , 2730-7379"]
[null,null,"Disciplina",null,"621.3815"]
[null,null,"Soggetti",null,"Electronic circuits"]
[{"$nulls":4},"Power electronics"]
[{"$nulls":4},"Materials"]
[{"$nulls":4},"Electronic Circuits and Systems"]
[{"$nulls":4},"Power Electronics"]
[{"$nulls":4},"Materials for Devices"]
[null,null,"Lingua di pubblicazione",null,"Inglese"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,null,"Nota di contenuto",null,"Part 1 Introduction -- Chapter 1 Introduction to Vertical GaN Power Electronics -- Chapter 2 Electronic Transport and Advances in Vertical Bulk GaN Based Power Semiconductor Devices -- Part 2 Bulk GaN Substrates -- Chapter 3 Bulk GaN -- Chapter 4 Near Equilibrium Ammonothermal (NEAT) Growth of Low Dislocation GaN for Power Devices -- Chapter 5 Use of HVPE for Growth of Bulk GaN Wafers and GaN Epilayers for Power Electronics Applications -- Chapter 6 X-ray Topography and High-Resolution X-ray Diffraction Characterization of GaN Materials for Power Electronics Applications -- Part 3 Epitaxial Growth of Gallium Nitride and Processing -- Chapter 7 Laser assisted MOCVD GaN and the Development of Vertical GaN-on-GaN PN diodes -- Chapter 8 MOCVD Growth of GaN Drift Layers on Bulk GaN Substrates for Power Electronic Devices -- Chapter 9 MBE Grown GaN P-N Diodes -- Chapter 10 Gallium Nitride Wafer Metrology and Device Processing -- Chapter 11 Layer Transfer of Gallium Nitride by Controlled Spalling -- Part 4 Selective Area Doping, Processes, and Characterization -- Chapter 12 In-situ TBCl Etching and Selective-Area Growth and Doping of GaN -- Chapter 13 Selective Area Regrowth and Doping for Vertical GaN Power Devices -- Chapter 14 Acceptor Dopant Ion Implant and Gyrotron Rapid Thermal Annealing of GaN -- Chapter "]
[{"$nulls":4},"15 Ion Implantation for p-Type Conductivity in GaN -- Chapter 16 High Energy Ion Implantation using Electrostatic Accelerators -- Chapter 17 Solid State Diffusion in GaN -- Chapter 18 Transmutation Doping of GaN -- Part 5 Materials Characterization Techniques -- Chapter 19 Deep Level Defect Spectroscopy and Electron Beam-Induced Current Characterization of GaN Junctions -- Chapter 20 Ion Beam Analysis of GaN Surfaces and Interfaces -- Chapter 21 Structural and Chemical Defect Characterization for Selectively Doped GaN -- Chapter 22 Secondary Ion Mass Spectroscopy (SIMS) Analysis of GaN Epitaxial Films -- Part 6 Gallium Nitride Materials Properties for Power Electronics Devices -- Chapter 23 Intrinsic and Extrinsic Thermal Conductivity of Gallium Nitride and Silicon Carbide -- Chapter 24 Breakdown Phenomena in GaN -- Chapter 25 Theoretical Modeling of Avalanche Currents in GaN -- Part 7 Related Wideband Gap Materials and Devices -- Chapter 26 Cubic GaN: Growth, Characterization, and Applications -- Chapter 27 Development of Wafer-Scale h-BN Quasi-Bulk Crystals -- Part 8 Future Outlook -- Chapter 28 Outlook of Wide Bandgap Semiconductors and Power Electronics in the Energy Transition Towards a More Electric Future."]
[null,null,null,"Sommario/riassunto","This book presents progress in device processing and materials characterization of the wide-bandgap semiconductor gallium nitride (GaN) and related materials for power electronics applications. The content of the book is based on the output of multiple well defined and actively managed programs from the U.S. Department of Energy’s Advanced Research Projects Agency-Energy (ARPA-E). The material is organized into eight parts with a total of 28 chapters contributed from invited experts that were part of the ARPA-E programs along with chapters from a few select experts from around the world who are actively engaged in GaN and related WBG semiconductor research and development. The book includes an overview of GaN power electronic devices and systems and a comprehensive review of the key vertical device processing challenges (Part I), detailed descriptions of bulk GaN substrate technology (Part II), discussions of the challenges in GaN epitaxial growth and processing (Part III), an in-depth examination of approaches and challenges in GaN selective area p-type doping with an eye towards mechanistic understanding (Part IV), an overview of innovative material characterization techniques developed to understand the device processing challenges (Part V), an analysis of the fundamental materials properties of GaN in relation to its use in power electronics (Part VI), a discussion of related earlier stage nitride wide bandgap materials development and application in power electronics and other applications (Part VII), and concludes with a forward-looking discussion of the areas that still need research and development to push the limits of power electronics to utilize wide bandgap semiconductors along with potential high impact application areas (Part VIII). This book is intended to be an essential reference for anyone working in either basic research or advanced development of vertical architecture GaN power electronics and technologies. It is anticipated this book will become a go-to reference for any scientist and engineer working in any nitride semiconductor material seeking an updated coverage of the state-of-the-art processing and characterization techniques that will push GaN know-how to new materials and device frontiers. Provides a coverage of the technological promises and challenges of vertical GaN power electronics devices and systems; Documents the state-of-the-art in GaN crystal growth, selective-area doping, and defect characterization techniques; Elucidates developments needed for advanced power electronic devices to realize an electrified and decarbonized world."]