LEADER 01084cam0 22003131 450 001 SOBE00084203 005 20250731083126.0 100 $a20250731d1972 |||||ita|0103 ba 101 $aita 102 $aIT 200 1 $aMichelangelo$ftesto di Frederick Hartt 205 $a2. ed 210 $aMilano$cGarzanti$d1972 215 $a163 p.$cill.$d33 cm 225 2 $agrandi pittori 300 $atraduzione di Lydia Magliano, Roselia Rossi e Giulia Zuccheri Tosio 410 1$1001LAEC00017057$12001 $aI *grandi pittori 500 10$aMichelangelo$3SOBA00035175$9604824 700 1$aHartt$b, Frederick$3AF00010759$4070$036699 702 1$aBuonarroti, Michelangelo <1475-1564>$3AF00014409$4040 801 0$aIT$bUNISOB$c20250731$gRICA 850 $aUNISOB 852 $aUNISOB$jFondo|Calì$m184024 912 $aSOBE00084203 940 $aM 102 Monografia moderna SBN 941 $aM 957 $aFondo|Calì$b001611$gSI$d184024$n20250529$hCali$rDono$tN$1rovito$2UNISOB$3UNISOB$420250731082804.0$520250731082852.0$6rovito 996 $aMichelangelo$9604824 997 $aUNISOB LEADER 06378nam 22006255 450 001 9910960965603321 005 20250818100519.0 010 $a3-642-74751-5 024 7 $a10.1007/978-3-642-74751-9 035 $a(CKB)2660000000027668 035 $a(SSID)ssj0001246159 035 $a(PQKBManifestationID)11872265 035 $a(PQKBTitleCode)TC0001246159 035 $a(PQKBWorkID)11341268 035 $a(PQKB)11773154 035 $a(DE-He213)978-3-642-74751-9 035 $a(MiAaPQ)EBC3092810 035 $a(PPN)238000982 035 $a(EXLCZ)992660000000027668 100 $a20111124d1990 u| 0 101 0 $aeng 135 $aurnn|008mamaa 181 $ctxt 182 $cc 183 $acr 200 10$aPhysics of Quantum Electron Devices /$fedited by Federico Capasso 205 $a1st ed. 1990. 210 1$aBerlin, Heidelberg :$cSpringer Berlin Heidelberg :$cImprint: Springer,$d1990. 215 $a1 online resource (XVI, 403 p.) 225 1 $aSpringer Series in Electronics and Photonics ;$v28 300 $aBibliographic Level Mode of Issuance: Monograph 311 08$a3-540-51128-8 311 08$a3-642-74753-1 320 $aIncludes bibliographical references at the end of each chapters and index. 327 $a1. Introduction -- 1.1 A Perspective on the Evolution of Quantum Semiconductor Devices -- 1.2 Outline of the Book -- References -- 2. The Nature of Molecular Beam Epitaxy and Consequences for Quantum Microstructures -- 2.1 Dimensional Confinement and Device Concepts -- 2.2 Molecular Beam Epitaxy -- 2.3 The Surface Kinetic Processes and Computer Simulations of Growth -- 2.4 Quantum Wells: Growth and Photoluminescence -- 2.5 Concluding Remarks -- 2.6 Recent Advances -- References -- 3. Nanolithography for Ultra-Small Structure Fabrication -- 3.1 Overview -- 3.2 Resolution Limits of Lithographic Processes -- 3.3 Pattern Transfer -- References -- 4. Theory of Resonant Tunnelling and Surface Superlattices -- 4.1 Tunnelling Probabilities -- 4.2 Tunnelling Time -- 4.3 Pseudo-Device Calculations -- 4.4 Lateral Superlattices -- References -- 5. The Investigation of Single and Double Barrier (Resonant Tunnelling) Heterostructures Using High Magnetic Fields -- 5.1 Background -- 5.2 LO Phonon Structure in the I(V) and C(V) Curves of Reverse-Biased Heterostructures -- 5.3 Magnetotunnelling from the 2D Electron Gas in Accumulated (InGa)As/InP Structures Grown by MBE and MOCVD -- 5.4 Observation of Magnetoquantized Interface States by Electron Tunnelling in Single-Barrier n? (InGa)As/InP/n+ (InGa)As Heterostructures -- 5.5 Box Quantised States -- 5.6 Double Barrier Resonant Tunnelling Devices -- References -- 6. Microwave and Millimeter-Wave Resonant-Tunnelling Devices -- 6.1 Speed of Response -- 6.2 Resonant-Tunnelling Oscillators -- 6.3 Self-Oscillating Mixers -- 6.4 Resistive Multipliers -- 6.5 Variable Absolute Negative Conductance -- 6.6 Persistent Photoconductivity and a Resonant-Tunnelling Transistor -- 6.7 A Look at Resonant-Tunnelling Theory -- 6.8 Concluding Remarks -- Note Added in Proof -- List of Symbols.-References -- 7. Resonant Tunnelling and Superlattice Devices: Physics and Circuits -- 7.1 Resonant Tunnelling Through Double Barriers and Superlattices -- 7.2 Application of Resonant Tunnelling: Transistors and Circuits -- References -- 8. Resonant-Tunnelling Hot Electron Transistors (RHET) -- 8.1 RHET Operation -- 8.2 RHET Technology Using GaAs/AlGaAs Heterostructures -- 8.3 InGaAs-Based Material Evaluation -- 8.4 RHET Technology Using InGaAs-Based Materials -- 8.5 Theoretical Analyses of RHET Performance -- 8.6 Summary -- References -- 9. Ballistic Electron Transport in Hot Electron Transistors -- 9.1 Ballistic Transport -- 9.2 Hot Electron Transistors -- 9.3 Hot Electron Injectors -- 9.4 Energy Spectroscopy -- 9.5 Electron Coherent Effects in the THETA Device -- 9.6 Transfer to the L Satellite Valleys -- 9.7 The THETA as a Practical Device -- References -- 10. Quantum Interference Devices -- 10.1 Background -- 10.2 Two-Port Quantum Devices -- 10.3 Multiport Quantum Devices -- Appendix: Aharonov ? Bohm Phase-shift in an Electric or Magnetic Field -- References -- Additional References -- 11. Carrier Confinement to One and Zero Degrees of Freedom -- 11.1 Experimental Methods -- 11.2 Discussion of Experimental Results -- 11.3 Conclusions -- References -- 12. Quantum Effects in Quasi-One-Dimensional MOSFETs -- 12.1 Background -- 12.2 MOSFET Length Scales -- 12.3 Special MOSFET Geometries -- 12.4 Strictly 1D Transport -- 12.5 Multichannel Transport (Particle in a Box?) -- 12.6 Averaged Quantum Diffusion -- 12.7 Mesoscopic Quantum Diffusion (Universal Conductance Fluctuations) -- 12.8 Effect of One Scatterer -- 12.9 Conclusion -- References. 330 $aThe ability to engineer the bandstructure and the wavefunction over length scales previously inaccessible to technology using artificially structured materials and nanolithography has led to a new class of electron semiconductor devices whose operation is controlled by quantum effects. These structures not only represent exciting tools for investigating new quantum phenomena in semiconductors, but also offer exciting opportunities for applications. This book gives the first comprehensive treatment of the physics of quantum electron devices. This interdisciplinary field, at the junction between material science, physics and technology, has witnessed an explosive growth in recent years. This volume presents a detailed coverage of the physics of the underlying phenomena, and their device and circuit applications, together with fabrication and growth technology. 410 0$aSpringer Series in Electronics and Photonics ;$v28 606 $aOptical materials 606 $aElectronics 606 $aOptical Materials 606 $aElectronics and Microelectronics, Instrumentation 615 0$aOptical materials. 615 0$aElectronics. 615 14$aOptical Materials. 615 24$aElectronics and Microelectronics, Instrumentation. 676 $a620.11295 676 $a620.11297 702 $aCapasso$b Federico$4edt$4http://id.loc.gov/vocabulary/relators/edt 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910960965603321 996 $aPhysics of Quantum Electron Devices$94430291 997 $aUNINA