LEADER 01365nam0 22003253i 450 
001 UBO1311066
005 20240802063439.0
010   $a089006749X
100   $a20091019d1995    ||||0itac50      ba
101 | $aeng
102   $aus
181  1$6z01$ai $bxxxe  
182  1$6z01$an
200 1 $aElectrical and thermal characterization of MESFETs, HEMTs, and HBTs$fRobert Anholt
210   $aBoston [etc.]$cArtech House$dİ1995
215   $aX, 310 p.$d24 cm.
225 | $a˜The œArtech House microwave library
410  0$1001MIL0136696$12001 $a˜The œArtech House microwave library
606   $aTransistori a effetto di campo$xModelli matematici$2FIR$3NAPC243416$9I
676   $a621.3815$9ELETTRONICA. COMPONENTI E CIRCUITI$v14
676   $a621.3815284$9Transistor e tiristor. Transistor a effetto di campo$v22
700  1$aAnholt$b, Robert$3UBOV509775$4070$0754349
790  1$aAnholt$b, Robert Edward$f <1949-    >$3NAPV112645$zAnholt, Robert
801  3$aIT$bIT-NA0079$c20091019
850   $aIT-BN0095          
912   $aUBO1311066
950  0$aBiblioteca Centralizzata di Ateneo$c1 v.$d 01SALA DING 621.3815                ANH.el$e 0102 0000022765    B A4                    1 v.$f3 $h19960221$i19960221
977   $a 01
996   $aElectrical and thermal characterization of MESFETs, HEMTs, and HBTs$91517818
997   $aUNISANNIO