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010   $a0387818006$bNew York
010   $a3211818006$bWien
100   $a20091005d1984    ||||0itac50      ba
101 | $aeng
102   $aus
181  1$6z01$ai $bxxxe  
182  1$6z01$an
200 1 $aAnalysis and simulation of semiconductor devices$fSiegfried Selberherr
210   $aWien$aNew York$cSpringer Verlag$dc1984
215   $aXIV, 293 p.$d25 cm.
606   $aSemiconduttori$2FIR$3NAPC093696$9I
676   $a537.6$9ELETTRODINAMICA (CORRENTI ELETTRICHE) E TERMOELETTRICITA'$v14
676   $a537.622$9ELETTRODINAMICA (CORRENTI ELETTRICHE) E TERMOELETTRICITA'. SEMICONDUTTIVITA'$v22
700  1$aSelberherr$b, Siegfried$f <1955-    >$3RMSV002091$4070$0183007
801  3$aIT$bIT-NA0079$c20091005
850   $aIT-BN0095          
912   $aUBO0004188
950  0$aBiblioteca Centralizzata di Ateneo$b1 v.$c1 v.$d 01SALA DING 537.6                   SEL.an$e 0102 0000003575    B A4                    1 v.$f3 $h19930913$i19930913
977   $a 01
996   $aAnalysis and simulation of semiconductor devices$9827423
997   $aUNISANNIO