LEADER 01287nam0 22003373i 450 001 UM10130781 005 20231121125910.0 010 $a9788889274255 100 $a20150521d2012 ||||0itac50 ba 101 | $aita 102 $ait 181 1$6z01$ai $bxxxe 182 1$6z01$an 200 1 $aSigismondo de Comitibus fulginate$fLucia Bertoglio 210 $aFoligno$cEdizioni Orfini Numeister$d2012 215 $a31 p.$cill.$d24 cm 225 | $aEventi 300 $aErrata corrige allegata 410 0$1001UM10065576$12001 $aEventi 700 1$aBertoglio$b, Lucia$3UM1V025579$0326731 801 3$aIT$bIT-01$c20150521 850 $aIT-RM028 $aIT-RM0313 $aIT-RM0151 $aIT-FR0017 899 $aBiblioteca Universitaria Alessandrina$bRM028 899 $aBIBLIOTECA CASANATENSE$bRM0313 899 $aBiblioteca Istituto Storico Italiano Medio Evo - I$bRM0151 899 $aBiblioteca umanistica Giorgio Aprea$bFR0017 $eN 912 $aUM10130781 950 0$aBiblioteca umanistica Giorgio Aprea$d 52MAG OPU 506$e 52SBA0000219405 VMN RS $fA $h20161129$i20161129 977 $a 01$a 07$a 41$a 52 996 $aSigismondo de Comitibus Fulginate$91748846 997 $aUNICAS LEADER 01416nam0 22003613i 450 001 NAP0468149 005 20251003044252.0 010 $a0780334167 100 $a20090727d1998 ||||0itac50 ba 101 | $aeng 102 $aus 181 1$6z01$ai $bxxxe 182 1$6z01$an 200 1 $aCMOS circuit design, layout, and simulation$fR. Jacob Baker, Harry W. Li and David E. Boyce 210 $aNew York$cIEEE Press$dc1998 215 $a XXIV, 902 p.$d25 cm. 225 | $aIEEE press series on microelectronic systems 410 0$1001UBO0288640$12001 $aIEEE press series on microelectronic systems 606 $aCircuiti integrati MOS$2FIR$3CFIC010365$9I 606 $aTransistori a effetto di campo$2FIR$3SBLC024395$9I 676 $a621.3815$9ELETTRONICA. COMPONENTI E CIRCUITI$v14 676 $a621.3815$9$v22 700 1$aBaker$b, R. Jacob$f <1964- >$3NAPV111669$4070$0324727 701 1$aBoyce$b, David E.$f <1940- >$3MILV136185$4070$0103982 701 1$aLi$b, Harry W.$f <1960- >$3NAPV111670$4070$0324728 801 3$aIT$bIT-000000$c20090727 850 $aIT-BN0095 901 $bNAP 01$cSALA DING $n$ 912 $aNAP0468149 950 0$aBiblioteca Centralizzata di Ateneo$c1 v.$d 01SALA DING 621.3815 BAK.cm$e 0102 0000037705 VMA A4 1 v.$fY $h20010514$i20010514 977 $a 01 996 $aCMOS$9768223 997 $aUNISANNIO