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100   $a20091005e20061996||||0itac50      ba
101 | $aeng
102   $agb
181  1$6z01$ai $bxxxe  
182  1$6z01$an
200 1 $aPhotoinduced defects in semiconductors$fDavid Redfield and Richard H. Bube
210   $aCambridge$cCambridge University press$d2006
215   $aX, 217 p.$cill.$d23 cm
225 | $aCambridge studies in semiconductor physics and microelectronic engineering$v4
300   $aRipr. facs. dell'ed.: Cambridge : Cambridge University press, 1996.
410  0$1001PUV0145640$12001 $aCambridge studies in semiconductor physics and microelectronic engineering$v4
606   $aSemiconduttori$xDifetti$2FIR$3NAPC243128$9I
606   $aFOTOCHIMICA$2FIR$3NAPC000967$9I
676   $a621.3815$9ELETTRONICA. COMPONENTI E CIRCUITI$v14
676   $a621.38152$9Elettronica. Componenti e circuiti. Semiconduttori$v22
700  1$aRedfield$b, David$3RMSV017932$4070$0726820
701  1$aBube$b, Richard H.$f <1927-     >$3MILV088861$4070$0770669
801  3$aIT$bIT-NA0079$c20091005
850   $aIT-BN0095          
912   $aMIL0703106
950  0$aBiblioteca Centralizzata di Ateneo$c1 v.$d 01SALA DING 621.3815                RED.ph$e 0102 0000060595    B A4                    1 v.$f3 $h20070108$i20070108
977   $a 01
996   $aPhotoinduced defects in semiconductors$91572603
997   $aUNISANNIO