LEADER 01614nam0 22003973i 450 
001 MIL0042967
005 20251003044219.0
010   $a0471623075
100   $a20091005d1990    ||||0itac50      ba
101 | $aeng
102   $aus
181  1$6z01$ai $bxxxe  
182  1$6z01$an
200 1 $aHigh-speed semiconductor devices$fedited by S.M. Sze
210   $aNew York [etc.]$cWiley$dc1990
215   $aXII, 643 p.$d24 cm
300   $aBasato sulle comunicazioni presentate al 1988 International electron devices and materials symposium tenutosi alla National Sun Yat-sen university, Kaohsiung, Taiwan, R.O.C.
606   $aSemiconduttori$2FIR$3CFIC012149$9E
606   $aTransistori$2FIR$3CFIC041222$9E
606   $aDiodi$2FIR$3SBLC131701$9I
676   $a621.3815$9ELETTRONICA. COMPONENTI E CIRCUITI$v14
676   $a621.38152$9Ingegneria elettronica. Componenti e circuiti. Dispositivi semiconduttori$v22
696   $aConduttori variabili
696   $aTransistor
699   $aSemiconduttori$yConduttori variabili
699   $aTransistori$yTransistor
702  1$aSze$b, Simon Min$f <1936-    >$3CFIV114732
790  1$aSze$b, S. M.$3UBOV122128$zSze, Simon Min <1936-    >
801  3$aIT$bIT-000000$c20091005
850   $aIT-BN0095          
901   $bNAP 01$cSALA DING $n$
912   $aMIL0042967
950  0$aBiblioteca Centralizzata di Ateneo$b1 v.$c1 v.$d 01SALA DING 621.3815                HIGSSD$e 0102 0000011715  VMA A4                    1 v.$fY $h19940704$i19940704
977   $a 01
996   $aHigh-speed semiconductor devices$9104907
997   $aUNISANNIO