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101 | $aeng
102   $aus
181  1$6z01$ai $bxxxe  
182  1$6z01$an
200 1 $aBipolar semiconductor devices$fDavid J. Roulston
210   $a New York$cMcGraw-Hill$dc1990
215   $aXXI, 422 p.$cill.$d25 cm.
225 | $aMcGraw-Hill series in electrical engineering. Electronics and electronic circuits
410  0$1001AQ10011295$12001 $aMcGraw-Hill series in electrical engineering. Electronics and electronic circuits
606   $aDiodi$2FIR$3NAPC243296$9I
676   $a621.3815$9ELETTRONICA. COMPONENTI E CIRCUITI$v14
676   $a621.381522$9Dispositivi semiconduttori. Diodi$v22
700  1$aRoulston$b, David J.$3MILV203271$4070$0770334
801  3$aIT$bIT-NA0079$c20091013
850   $aIT-BN0095          
912   $aCAG1566370
950  0$aBiblioteca Centralizzata di Ateneo$c1 v.$d 01SALA DING 621.3815                ROU.bi$e 0102 0000002915    B A4                    1 v.$f3 $h19930726$i19930726
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996   $aBipolar semiconductor devices$91571355
997   $aUNISANNIO