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The major limitations, including low carrier mobility, degraded subthreshold slope, and heat dissipation, have become more challenging to address as the size of silicon-based metal oxide semiconductor field effect transistors (MOSFETs) has decreased to nanometers, while device integration density has increased. This book aims to present technical approaches that address the need for new nanoelectronic materials and devices. The focus is on new concepts and knowledge in nanoscience and nanotechnology for applications in logic, memory, sensors, photonics, and renewable energy. This research on nanoelectronic materials and devices will be instructive in finding solutions to address the challenges of current electronics in switching speed, power consumption, and heat dissipation and will be of great interest to academic society and the industry. 606 $aHistory of engineering and technology$2bicssc 610 $aquantum mechanical 610 $aneuromorphic computation 610 $aoff-current (Ioff) 610 $adouble-gate tunnel field-effect-transistor 610 $atopological insulator 610 $aback current blocking layer (BCBL) 610 $aCMOS power amplifier IC 610 $ainformation integration 610 $adistributed Bragg 610 $aspike-timing-dependent plasticity 610 $aelectron affinity 610 $aenhancement-mode 610 $acurrent collapse 610 $agallium nitride (GaN) 610 $aband-to-band tunneling 610 $avertical field-effect transistor (VFET) 610 $aionic liquid 610 $aluminescent centres 610 $athermal coupling 610 $avision localization 610 $aPC1D 610 $aUAV 610 $aZnO/Si 610 $adual-switching transistor 610 $amemristor 610 $afield-effect transistor 610 $ahigher order synchronization 610 $ashallow trench isolation (STI) 610 $amemristive device 610 $aon-current (Ion) 610 $alow voltage 610 $areflection transmision method 610 $adielectric layer 610 $asource/drain (S/D) 610 $ahigh efficiency 610 $ananostructure synthesis 610 $aInAlN/GaN heterostructure 610 $asupercapacitor 610 $ahigh-electron mobility transistor (HEMTs) 610 $aheterojunction 610 $ap-GaN 610 $arecessed channel array transistor (RCAT) 610 $agate field effect 610 $acharge injection 610 $asaddle FinFET (S-FinFET) 610 $aL-shaped tunnel field-effect-transistor 610 $aconductivity 610 $aenergy storage 610 $ahierarchical 610 $aPECVD 610 $asample grating 610 $aMISHEMT 610 $abistability 610 $athreshold voltage (VTH) 610 $abandgap tuning 610 $aoscillatory neural networks 610 $aUV irradiation 610 $aMott transition 610 $athird harmonic tuning 610 $atopological magnetoelectric effect 610 $across-gain modulation 610 $a2D material 610 $asolar cells 610 $asilicon on insulator (SOI) 610 $aGreen's function 610 $aoptoelectronic devices 610 $asemiconductor optical amplifier 610 $aZnO films 610 $agraphene 610 $aAlGaN/GaN 610 $apolarization effect 610 $atwo-photon process 610 $aconductive atomic force microscopy (cAFM) 610 $a2DEG density 610 $avanadium dioxide 610 $ainterface traps 610 $apotential drop width (PDW) 610 $apattern recognition 610 $adrain-induced barrier lowering (DIBL) 610 $aatomic layer deposition (ALD) 610 $anormally off power devices 610 $agate-induced drain leakage (GIDL) 610 $ainsulator-metal transition (IMT) 610 $azinc oxide 610 $asynaptic device 610 $asubthreshold slope (SS) 610 $alanding 610 $asilicon 610 $acorner-effect 610 $aconditioned reflex 610 $aquantum dot 610 $agallium nitride 610 $abismuth ions 610 $aconduction band offset 610 $avariational form 615 7$aHistory of engineering and technology 700 $aLi$b Qiliang$01328703 702 $aZhu$b Hao 801 0$bScCtBLL 801 1$bScCtBLL 906 $aBOOK 912 $a9910346664303321 996 $aNanoelectronic Materials, Devices and Modeling$93038849 997 $aUNINA