LEADER 05415nam 2200649Ia 450 001 9910144581703321 005 20170810191447.0 010 $a1-281-84314-8 010 $a9786611843144 010 $a3-527-61774-4 010 $a3-527-61775-2 035 $a(CKB)1000000000377066 035 $a(EBL)481335 035 $a(OCoLC)289075526 035 $a(SSID)ssj0000120436 035 $a(PQKBManifestationID)11146453 035 $a(PQKBTitleCode)TC0000120436 035 $a(PQKBWorkID)10102320 035 $a(PQKB)11182201 035 $a(MiAaPQ)EBC481335 035 $a(PPN)153531282 035 $a(EXLCZ)991000000000377066 100 $a19960213d2004 uy 0 101 0 $aeng 135 $aur|n|---||||| 181 $ctxt 182 $cc 183 $acr 200 10$aChemical mechanical planarization of microelectronic materials$b[electronic resource] /$fJoseph M. Steigerwald, Shyam P. Murarka, Ronald J. Gutmann 210 $aWeinheim $cWiley-VCH$d2004 215 $a1 online resource (339 p.) 300 $aDescription based upon print version of record. 311 $a0-471-13827-4 320 $aIncludes bibliographical references and index. 327 $aChemical Mechanical Planarization of Microelectronic Materials; CONTENTS; Preface; 1 Chemical Mechanical Planarization - An Introduction; 1.1 Introduction; 1.2 Applications; 1.3 The CMP Process; 1.4 CMP Tools; 1.5 Process Integration; 1.6 Conclusion and Book Outline; References; 2 Historical Motivations for CMP; 2.1 Advanced Metallization Schemes; 2.1.1 Interconnect Delay Impact on Performance; 2.1.2 Methods of Reducing Interconnect Delay; 2.1.3 Planarity Requirements for Multilevel Metallization; 2.2 Planarization Schemes; 2.2.1 Smoothing and Local Planarization; 2.2.2 Global Planarization 327 $a2.3 CMP Planarization2.3.1 Advantages of CMP; 2.3.2 Disadvantages of CMP; 2.3.3 The Challenge of CMP; References; 3 CMP Variables and Manipulations; 3.1 Output Variables; 3.2 Input Variables; References; 4 Mechanical and Electrochemical Concepts for CMP; 4.1 Preston Equation; 4.2 Fluid Layer Interactions; 4.3 Boundary Layer Interactions; 4.3.1 Fluid Boundary Layer; 4.3.2 Double Layer; 4.3.3 Metal Surface Films; 4.3.4 Mechanical Abrasion; 4.4 Abrasion Modes; 4.4.1 Polishing vs. Grinding; 4.4.2 Hertzian Indentation vs. Fluid-Based Wear; 4.5 The Polishing Pad; 4.5.1 Pad Materials and Properties 327 $a4.5.2 Pad Conditioning4.6 Electrochemical Phenomena; 4.6.1 Reduction-Oxidation Reactions; 4.6.2 Pourbaix Diagrams; 4.6.3 Mixed Potential Theory; 4.6.4 Example: Copper CMP in NH3-Based Slurries; 4.6.5 Example: Copper-Titanium Interaction; 4.7 Role of Chemistry in CMP; 4.8 Abrasives; References; 5 Oxide CMP Processes - Mechanisms and Models; 5.1 The Role of Chemistry in Oxide Polishing; 5.1.1 Glass Polishing Mechanisms; 5.1.2 The Role of Water in Oxide Polishing; 5.1.3 Chemical Interactions Between Abrasive and Oxide Surface; 5.2 Oxide CMP in Practice; 5.2.1 Polish Rate Results 327 $a5.2.2 Planarization Results5.2.3 CMP in Manufacturing; 5.2.4 Yield Issues; 5.3 Summary; References; 6 Tungsten and CMP Processes; 6.1 Inlaid Metal Patterning; 6.1.1 RIE Etch Back; 6.1.2 Metal CMP; 6.2 Tungsten CMP; 6.2.1 Surface Passivation Model for Tungsten CMP; 6.2.2 Tungsten CMP Processes; 6.3 Summary; References; 7 Copper CMP; 7.1 Proposed Model for Copper CMP; 7.2 Surface Layer Formation - Planarization; 7.2.1 Formation of Native Surface Films; 7.2.2 Formation of Nonnative Cu-BTA Surface Film; 7.3 Material Dissolution; 7.3.1 Removal of Abraded Material 327 $a7.3.2 Increasing Solubility with Complexing Agent7.3.3 Increasing Dissolution Rate with Oxidizing Agents; 7.3.4 Chemical Aspect of the Copper CMP Model; 7.4 Preston Equation; 7.4.1 Preston Coefficient; 7.4.2 Polish Rates; 7.4.3 Comparison of Kp Values; 7.5 Polish-Induced Stress; 7.6 Pattern Geometry Effects; 7.6.1 Dishing and Erosion in Cu/SiO2 System; 7.6.2 Optimization of Process to Minimize Dishing and Erosion; 7.6.3 Summary; References; 8 CMP of Other Materials and New CMP Applications; 8.1 The Front-End Applications in Silicon IC Fabrication 327 $a8.1.1 Polysilicon CMP for Deep Trench Capacitor Fabrication 330 $aChemical Mechanical Planarization (CMP) plays an important role in today's microelectronics industry. With its ability to achieve global planarization, its universality (material insensitivity), its applicability to multimaterial surfaces, and its relative cost-effectiveness, CMP is the ideal planarizing medium for the interlayered dielectrics and metal films used in silicon integrated circuit fabrication. But although the past decade has seen unprecedented research and development into CMP, there has been no single-source reference to this rapidly emerging technology-until now.Chemica 606 $aMicroelectronics$xMaterials 606 $aGrinding and polishing 615 0$aMicroelectronics$xMaterials. 615 0$aGrinding and polishing. 676 $a621.3815 676 $a621.38152 700 $aSteigerwald$b Joseph M$0863270 701 $aMurarka$b S. P$0863271 701 $aGutmann$b Ronald J$0863272 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bMiAaPQ 906 $aBOOK 912 $a9910144581703321 996 $aChemical mechanical planarization of microelectronic materials$91926986 997 $aUNINA LEADER 00903nam a2200241 i 4500 001 991003214809707536 005 20021205143831.0 008 020606s2000 it ||| | ita 020 $a8815075895 035 $ab11771781-39ule_inst 035 $aPARLA222009$9ExL 040 $aDip.to Filosofia$bita 100 1 $aFilippini, Luigi$089105 245 10$aEconomia delle fondazioni :$bdalle piae causae alle fondazioni bancarie /$ca cura di Luigi Filippini 260 $aBologna :$bIl mulino 300 $a254 p. ;$c22 cm. 490 0 $aCollana della Societą italiana degli economisti 907 $a.b11771781$b27-04-17$c09-12-02 912 $a991003214809707536 945 $aLE005 330 FIL01. 01$g1$i2005000129230$lle005$o-$pE0.00$q-$rl$s- $t0$u0$v0$w0$x0$y.i12017954$z09-12-02 996 $aEconomia delle fondazioni$9881628 997 $aUNISALENTO 998 $ale005$b01-01-02$cm$da $e-$fita$git $h0$i1 LEADER 03255oam 2200481 450 001 9910418317203321 005 20230621135710.0 010 $a9783832549718 024 8 $ahttps://doi.org/10.30819/4971 035 $a(CKB)4100000011479711 035 $a(oapen)https://directory.doabooks.org/handle/20.500.12854/64426 035 $a(ScCtBLL)b9ce4a60-9be4-4a3c-af98-416064d36872 035 $a(EXLCZ)994100000011479711 100 $a20210223h20192019 fy 0 101 0 $aeng 135 $aur||#|||||||| 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aInvestigation on the dissemination of unit watt in airborne sound and applications /$fSpyros Brezas 210 $aBerlin/Germany$cLogos Verlag Berlin$d2019 210 1$aBerlin, Germany :$cLogos Verlag Berlin GmbH,$d[2019] 210 4$d©2019 215 $a1 online resource (iv, 197 pages) $cillustrations, charts; digital file(s) 225 0 $aAachener Beitrage zur Akustik 300 $aAuthor's doctoral thesis, Rheinisch-Westfa?lische Technische Hochschule Aachen. 311 08$aPrint version: 3832549714 320 $aIncludes bibliographical references. 330 $aSound power describes the emission of sound from sound sources. Despite today's state-of-the art measurement techniques, the current sound power determination methods are restricted due to various limitations. To overcome these limitations, a new sound power determination method is proposed, aiming at the establishment of traceability in airborne sound. This will enable the characterization of a sound source by its free field sound power. The dissertation describes a study on the dissemination process, which will allow the sound power of a device under test located at a real surrounding environment, to be referred to its free field sound power. Apart from the sound power, the corresponding uncertainty may be estimated in a transparent way, where each uncertainty component is provided. The basic tool for the dissemination process is the substitution method using aerodynamic reference sound sources, applied to both sound pressure and sound intensity measurements. Initially, a theoretical investigation deals with the factors that influence the substitution method. Experimental results are then presented based on measurements using a specially designed scanning apparatus. The transition from calibration to in situ conditions and the required correction, due to changes in environmental and operational conditions, is then discussed. In the last section, the sound power level of devices under test is determined along with its related uncertainty, which is further compared to the up-to-date uncertainty values. 606 $aEngineering$xAcoustics 610 $asound power 610 $asubstitution 610 $acorrection 610 $auncertainty 610 $atraceability 615 0$aEngineering$xAcoustics. 676 $a620.2 700 $aBrezas$b Spyros$0929733 712 02$aRheinisch-Westfa?lische Technische Hochschule Aachen, 801 0$bUkMaJRU 912 $a9910418317203321 996 $aInvestigation on the dissemination of unit watt in airborne sound and applications$92089901 997 $aUNINA